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27 条记录 (耗时 0.027 秒)

    Nitride semiconductor laser chip and method of fabrication thereof
    21.
    发明申请
    Nitride semiconductor laser chip and method of fabrication thereof 有权
    氮化物半导体激光芯片及其制造方法

    公开(公告)号：US20110317733A1

    公开(公告)日：2011-12-29

    申请号：US13067747

    申请日：2011-06-23

    申请人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    发明人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    IPC分类号： H01S5/22 ,  H01L33/32 ,  H01S5/323

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2301/176

    摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

    摘要翻译： 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。

    Nitride semiconductor laser chip and method of fabricating same
    22.
    发明申请
    Nitride semiconductor laser chip and method of fabricating same 审中-公开
    氮化物半导体激光芯片及其制造方法

    公开(公告)号：US20090168827A1

    公开(公告)日：2009-07-02

    申请号：US12318237

    申请日：2008-12-23

    申请人： Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Kentaro Tani

    发明人： Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Kentaro Tani

    IPC分类号： H01S5/00 ,  H01L21/02

    CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/34333

    摘要： A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L1 away from the light emission mirror facet. The thickness d of the p-side ohmic contact and the distance L1 from the p-side ohmic contact to the light emission mirror facet are adjusted such that the amount of current injected into the light emission mirror facet is 20% or more but 70% or less of the amount of current injected into an area directly below the p-side pad contact.

    摘要翻译： 提供了一种氮化物半导体激光器芯片，其不仅可以提高其COD水平，而且可以防止其I-L特性曲线急剧上升，并且可以降低工作电压。 氮化物半导体激光器芯片包括构成氮化物半导体层并形成在n型GaN衬底上的层，包括发光镜面和光反射镜面的镜面，形成在上接触层上的p侧欧姆接触到 到达镜面和在远离发光镜面的距离L1的区域中形成的p侧焊盘触点。 调整p侧欧姆接触的厚度d和从p侧欧姆接触到发光镜面的距离L1，使得注入发光镜面的电流量为20％以上且70％ 或更少的注入到p侧焊盘触点正下方的区域的电流量。

    Worn type electronic device and biological measuring apparatus provided with the same
    24.
    发明申请
    Worn type electronic device and biological measuring apparatus provided with the same 审中-公开
    装备有电子装置及其生物测定装置的装置

    公开(公告)号：US20080004510A1

    公开(公告)日：2008-01-03

    申请号：US11716753

    申请日：2007-03-12

    申请人： Hiroki Tanzawa ,  Toshiyuki Kawakami ,  Nobuto Fukushima ,  Hideki Shimizu ,  Tsuneharu Kasai ,  Shigeru Futakami ,  Kouji Fujii

    发明人： Hiroki Tanzawa ,  Toshiyuki Kawakami ,  Nobuto Fukushima ,  Hideki Shimizu ,  Tsuneharu Kasai ,  Shigeru Futakami ,  Kouji Fujii

    IPC分类号： A61B5/00

    CPC分类号： A61B5/00 ,  A44C5/0015 ,  A61B5/681 ,  A61B5/742 ,  G04G9/00 ,  G04G17/083

    摘要： A worn type electronic device comprises: a light emitting element for emitting a light having a specified wave length and a light guide means for guiding the light emitted from the light emitting element in a specified direction; the light emitting element disposed in a body of the worn type electronic device, wherein a light emission of the light emitting element is controlled based on the control of the worn type electronic device; and the light guide means including at least one of a body side light guide means disposed in the body of the worn type electronic device and a band side light guide means disposed in a band, wherein the light emitted from the light emitting element is emitted from the surface of the body of the worn type electronic device via the body side light guide means; or wherein the light emitted from the light emitting element is emitted from the surface of the band via the band side light guide means.

    摘要翻译： 磨损型电子装置包括：用于发射具有特定波长的光的发光元件和用于沿着指定方向引导从发光元件发射的光的导光装置; 所述发光元件设置在所述磨损型电子设备的主体中，其中，基于所述磨损型电子设备的控制来控制所述发光元件的发光; 并且所述导光装置包括设置在所述磨损型电子设备的主体中的身体侧导光装置和设置在带中的带侧光导装置中的至少一个，其中从所述发光元件发射的光从 经由身体侧光导装置的磨损型电子装置的主体的表面; 或者其中从发光元件发射的光经由带侧光导装置从带的表面发射。

    GaN-based semiconductor laser device
    25.
    发明授权
    GaN-based semiconductor laser device 有权
    GaN基半导体激光器件

    公开(公告)号：US07167489B2

    公开(公告)日：2007-01-23

    申请号：US10490582

    申请日：2002-07-18

    申请人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Tomoki Ono ,  Shigetoshi Ito ,  Susumu Omi

    发明人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Tomoki Ono ,  Shigetoshi Ito ,  Susumu Omi

    IPC分类号： H01S3/098 ,  H01S3/13 ,  H01S5/00

    CPC分类号： H01S5/32341 ,  H01S5/0654 ,  H01S5/0655 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/2231

    摘要： According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer, and a stripe-shaped waveguide for guiding light generated in the active layer. At least one pair of light-absorbing films are provided in at least local regions on the opposite sides of the stripe-shaped waveguide, to reach a distance within 0.3 μm from the waveguide. According to another aspect of the present invention, a gan-based semiconductor laser device includes first conductivity type semiconductor layers, a semiconductor active layer and second conductivity type semiconductor layers stacked sequentially. The laser device further includes a ridge stripe provided to cause a refractive index difference for confinement of light in a lateral direction crossing a longitudinal direction of a cavity, and a current-introducing window portion provided on the ridge stripe. The current-introducing window portion includes a narrow portion that is locally narrowed compared to the width of the ridge stripe.

    摘要翻译： 根据本发明的一个方面，氮化物半导体激光器件包括氮化物半导体有源层和用于引导在有源层中产生的光的条形波导。 至少一对光吸收膜设置在条状波导的相对侧上的至少局部区域中，以达到距波导0.3μm的距离。 根据本发明的另一方面，一种基于半导体的半导体激光器件包括依次层叠的第一导电型半导体层，半导体有源层和第二导电型半导体层。 激光装置还包括设置成使得在与空腔的纵向方向交叉的横向方向上限制光的折射率差异的脊条和设置在脊条上的电流引入窗口部分。 电流引入窗口部分包括与脊条的宽度相比局部变窄的窄部分。