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    Nitride semiconductor laser chip and method of fabricating same
    1.
    发明申请
    Nitride semiconductor laser chip and method of fabricating same 审中-公开
    氮化物半导体激光芯片及其制造方法

    公开(公告)号：US20090168827A1

    公开(公告)日：2009-07-02

    申请号：US12318237

    申请日：2008-12-23

    申请人： Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Kentaro Tani

    发明人： Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Kentaro Tani

    IPC分类号： H01S5/00 ,  H01L21/02

    CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/34333

    摘要： A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L1 away from the light emission mirror facet. The thickness d of the p-side ohmic contact and the distance L1 from the p-side ohmic contact to the light emission mirror facet are adjusted such that the amount of current injected into the light emission mirror facet is 20% or more but 70% or less of the amount of current injected into an area directly below the p-side pad contact.

    摘要翻译： 提供了一种氮化物半导体激光器芯片，其不仅可以提高其COD水平，而且可以防止其I-L特性曲线急剧上升，并且可以降低工作电压。 氮化物半导体激光器芯片包括构成氮化物半导体层并形成在n型GaN衬底上的层，包括发光镜面和光反射镜面的镜面，形成在上接触层上的p侧欧姆接触到 到达镜面和在远离发光镜面的距离L1的区域中形成的p侧焊盘触点。 调整p侧欧姆接触的厚度d和从p侧欧姆接触到发光镜面的距离L1，使得注入发光镜面的电流量为20％以上且70％ 或更少的注入到p侧焊盘触点正下方的区域的电流量。

    Nitride semiconductor laser chip and method of fabrication thereof
    3.
    发明申请
    Nitride semiconductor laser chip and method of fabrication thereof 有权
    氮化物半导体激光芯片及其制造方法

    公开(公告)号：US20110317733A1

    公开(公告)日：2011-12-29

    申请号：US13067747

    申请日：2011-06-23

    申请人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    发明人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    IPC分类号： H01S5/22 ,  H01L33/32 ,  H01S5/323

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2301/176

    摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

    摘要翻译： 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。

    Nitride semiconductor laser chip and method of fabrication thereof
    4.
    发明授权
    Nitride semiconductor laser chip and method of fabrication thereof 有权
    氮化物半导体激光芯片及其制造方法

    公开(公告)号：US08379682B2

    公开(公告)日：2013-02-19

    申请号：US13067747

    申请日：2011-06-23

    申请人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    发明人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    IPC分类号： H01S3/04

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2301/176

    摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

    摘要翻译： 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。

    Self-pulsation type semiconductor laser device
    8.
    发明授权
    Self-pulsation type semiconductor laser device 失效
    自脉冲型半导体激光器件

    公开(公告)号：US6002701A

    公开(公告)日：1999-12-14

    申请号：US771150

    申请日：1996-12-20

    申请人： Yasuo Kan ,  Kentaro Tani ,  Tadashi Takeoka ,  Akiyoshi Sugahara

    发明人： Yasuo Kan ,  Kentaro Tani ,  Tadashi Takeoka ,  Akiyoshi Sugahara

    IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/0658 ,  H01S5/2219

    摘要： A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.

    摘要翻译： 自脉动型半导体激光器件包括第一导电类型的半导体衬底和至少包括设置在半导体衬底上的有源层的多层结构。 多层结构包括设置在有源层下方的第一导电类型的第一包层，具有设置在有源层上方的条纹脊部的第二导电类型的第二包层和设置在第二包层上的可饱和吸收膜。 可饱和吸收膜包括用于积聚光激发载流子的积聚区域。 蓄积区域与第二包覆层的表面分开设置。

    Vehicle lamp controller
    9.
    发明授权
    Vehicle lamp controller 有权
    车灯控制器

    公开(公告)号：US08866388B2

    公开(公告)日：2014-10-21

    申请号：US13534646

    申请日：2012-06-27

    申请人： Akitaka Kanamori ,  Kentaro Tani ,  Naoki Tatara

    发明人： Akitaka Kanamori ,  Kentaro Tani ,  Naoki Tatara

    IPC分类号： B60Q1/02 ,  B60Q1/14 ,  B60Q11/00 ,  B60Q1/08

    CPC分类号： B60Q11/00 ,  B60Q1/08 ,  B60Q1/143 ,  B60Q2300/146

    摘要： A vehicle lamp controller includes a lamp control unit that performs lamp control, in which light amount or light distribution of each of a plurality of lamps to be provided on a vehicle that runs on electric power from a battery, is controlled, according to a priority that is assigned to each of the plurality of lamps, wherein the priorities are determined based on degrees of necessity of the plurality of lamps in securing safety for the vehicle. The vehicle lamp controller may further include a remaining battery charge detecting device for detecting a remaining charge of a battery, and the lamp control unit may be configured to perform the lamp control according to the priorities when the remaining charge becomes lower than a predetermined threshold.

    摘要翻译： 车辆灯控制器包括灯控制单元，其执行灯控制，其中根据优先级来控制要设置在来自电池的电力上运行的车辆上的多个灯中的每一个的光量或光分布 其被分配给多个灯中的每一个，其中基于确保车辆的安全性的多个灯的必要性来确定优先级。 车辆灯控制器还可以包括用于检测电池的剩余电量的剩余电池电量检测装置，并且灯控制单元可以被配置为当剩余电荷低于预定阈值时根据优先级执行灯控制。