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21 条记录 (耗时 0.021 秒)

    Nitride semiconductor laser chip and method of fabrication thereof
    2.
    发明申请
    Nitride semiconductor laser chip and method of fabrication thereof 有权
    氮化物半导体激光芯片及其制造方法

    公开(公告)号：US20110317733A1

    公开(公告)日：2011-12-29

    申请号：US13067747

    申请日：2011-06-23

    申请人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    发明人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    IPC分类号： H01S5/22 ,  H01L33/32 ,  H01S5/323

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2301/176

    摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

    摘要翻译： 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。

    Nitride semiconductor laser chip and method of fabrication thereof
    3.
    发明授权
    Nitride semiconductor laser chip and method of fabrication thereof 有权
    氮化物半导体激光芯片及其制造方法

    公开(公告)号：US08379682B2

    公开(公告)日：2013-02-19

    申请号：US13067747

    申请日：2011-06-23

    申请人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    发明人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

    IPC分类号： H01S3/04

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2301/176

    摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

    摘要翻译： 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。

    Light receiving device circuit-built-in type light receiving unit and optical disk unit
    7.
    发明申请
    Light receiving device circuit-built-in type light receiving unit and optical disk unit 审中-公开
    光接收装置电路内置型光接收单元和光盘单元

    公开(公告)号：US20050045979A1

    公开(公告)日：2005-03-03

    申请号：US10497242

    申请日：2002-11-29

    申请人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L27/14

    CPC分类号： H01L31/02161 ,  H01L31/103 ,  H01L31/1035

    摘要： A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.

    摘要翻译： 在硅衬底上设置第一P型扩散层和P型半导体层，在该P型半导体层的前表面上设置两个N型扩散层，以形成两个光接收单元。 三层半透膜，第一氧化硅膜，氮化硅膜和第二氧化硅膜设置在两个扩散层之间的N型扩散层和P型半导体层上。 在生产过程中产生的并且在三层半透明膜之间的两个界面中分布和捕获的孔可以将P型半导体层的表面附近的场强降低到传统水平以下并导致导通型 以相应地减小光接收单元之间的泄漏电流。

    Light receiving element and light receiving device incorporating circuit and optical disk drive
    8.
    发明授权
    Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
    光接收元件和光接收装置并入电路和光盘驱动器

    公开(公告)号：US07307326B2

    公开(公告)日：2007-12-11

    申请号：US10499357

    申请日：2002-12-10

    申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/00 ,  H01L31/0232

    CPC分类号： H01L31/103 ,  H01L31/02161

    摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

    摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

    Light receiving element and light receiving device incorporating circuit and optical disk drive
    9.
    发明申请
    Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
    光接收元件和光接收装置并入电路和光盘驱动器

    公开(公告)号：US20050116320A1

    公开(公告)日：2005-06-02

    申请号：US10499357

    申请日：2002-12-10

    申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L23/58

    CPC分类号： H01L31/103 ,  H01L31/02161

    摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

    摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME
    10.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20130037779A1

    公开(公告)日：2013-02-14

    申请号：US13584353

    申请日：2012-08-13

    申请人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

    发明人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

    IPC分类号： H01L33/06

    CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/32

    摘要： A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

    摘要翻译： 氮化物半导体发光器件包括依次提供的n型氮化物半导体层，V坑生成层，中间层，多量子阱发光层和p型氮化物半导体层。 多量子阱发光层是通过交替层叠阻挡层和具有比阻挡层的能隙小的带隙能量的阱层而形成的层。 在多量子阱发光层中部分地形成V凹坑，并且V凹坑的起始点的平均位置位于中间层中。