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公开(公告)号：US20080298409A1
公开(公告)日：2008-12-04
申请号：US12155186
申请日：2008-05-30
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0425 , H01S5/3201 , H01S5/3202 , H01S5/34333
摘要： In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光器芯片中，为了抑制氮化物半导体层上的台阶的发展，基板具有（1-100）面作为主面，谐振器面垂直于主面，在切割 表面形成谐振器面，至少由条形波导的一侧形成蚀刻入蚀刻区域，以朝向氮化物半导体层的表面开口。
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公开(公告)号：US07995632B2
公开(公告)日：2011-08-09
申请号：US12155186
申请日：2008-05-30
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0425 , H01S5/3201 , H01S5/3202 , H01S5/34333
摘要： In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光器芯片中，为了抑制氮化物半导体层上的台阶的发展，基板具有（1-100）面作为主面，谐振器面垂直于主面，在切割 表面形成谐振器面，至少由条形波导的一侧形成蚀刻入蚀刻区域，以朝向氮化物半导体层的表面开口。
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公开(公告)号：US20080304528A1
公开(公告)日：2008-12-11
申请号：US12155332
申请日：2008-06-03
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S2301/173
摘要： In a nitride semiconductor laser device so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (11-20) plane as the principal plane, the resonator end surface is perpendicular to the principal plane, and, in the cleavage surface forming the resonator end surface, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光装置中，为了抑制氮化物半导体层上的台阶的发展，基板具有（11-20）面作为主面，共振器端面垂直于主面，在 形成谐振器端面的解理面至少由条状波导的一侧形成为朝向氮化物半导体层的表面开口的蚀刻区域的蚀刻部分。
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4.发明授权公开(公告)号：US06914116B2
公开(公告)日：2005-07-05
申请号：US10630813
申请日：2003-07-31
申请人： Hideaki Katsuta , Hideo Sugai , Shingo Sato , Fumio Yamashita
发明人： Hideaki Katsuta , Hideo Sugai , Shingo Sato , Fumio Yamashita
CPC分类号： C08G18/10 , C08G18/5024 , C08G18/8096 , C09D175/04 , Y10T428/31551 , C08G18/285 , C08G18/2895 , C08G18/40 , C08L2666/08
摘要： A light-colored water based intercoat coating composition containing a hydroxyl group-containing resin (A), a curing agent (B) and a color pigment (C), a resulting coating film having a lightness index or a L value of 80 or more, the curing agent (B) being a blocked polyisocyanate curing agent (B1) blocked with a pyrazole blocking agent.
摘要翻译： 含有含羟基的树脂（A），固化剂（B）和着色颜料（C）的浅色的水基涂料涂料组合物，所得到的具有亮度指数或L值为80以上的涂膜 ，固化剂（B）是用吡唑封闭剂封端的封端多异氰酸酯固化剂（B 1 N 1）。
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公开(公告)号：US06174965B1
公开(公告)日：2001-01-16
申请号：US09255336
申请日：1999-02-23
申请人： Fumio Yamashita , Yoshiyuki Yukawa , Haruhiko Aida
发明人： Fumio Yamashita , Yoshiyuki Yukawa , Haruhiko Aida
IPC分类号： C08F2000
CPC分类号： C08G63/6854
摘要： The present invention provides a polyester resin having in the molecule at least one quaternary ammonium base represented by the formula (wherein X is halogen and R is alkyl), and a process for its production. The present invention further provides a pigment dispersion containing a pigment and the above polyester resin as resin for dispersion of the pigment, and also provides a coating composition containing the above pigment dispersion.
摘要翻译： 本发明提供一种在分子中具有至少一个由式（其中X是卤素且R是烷基）表示的季铵碱的聚酯树脂及其制备方法。 本发明还提供了含有颜料和上述聚酯树脂作为颜料分散树脂的颜料分散体，并且还提供了含有上述颜料分散体的涂料组合物。
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公开(公告)号：US07842956B2
公开(公告)日：2010-11-30
申请号：US11636570
申请日：2006-12-11
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译： 在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。 此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。
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公开(公告)号：US20070131960A1
公开(公告)日：2007-06-14
申请号：US11636570
申请日：2006-12-11
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译： 在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。 此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。
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公开(公告)号：US06596793B2
公开(公告)日：2003-07-22
申请号：US09879125
申请日：2001-06-13
申请人： Fumio Yamashita , Yoshiyuki Yukawa
发明人： Fumio Yamashita , Yoshiyuki Yukawa
IPC分类号： C08K534
CPC分类号： C09D17/002 , C08F290/046 , C09B67/009
摘要： This invention provides a copolymer having a number-average molecular weight within a range of 2,000-100,000 and a resin acid value within a range of 10-200 mgKOH/g, which is obtained by copolymerizing (a) 5-50 parts by weight of carboxyl-containing, polymerizable unsaturated macromonomer, (b) 30-70 parts by weight of at least one polymerizable unsaturated macromonomer selected from polyalkyl (meth)acrylate macromonomers and polystyrene macromonomers, and (c) 5-65 parts by weight of at least one other polymerizable unsaturated monomer which is copolymerizable with said (a) and/or (b) component; a pigment dispersion using this copolymer; and a pigment composition using this pigment dispersion.
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公开(公告)号：US5882842A
公开(公告)日：1999-03-16
申请号：US800214
申请日：1997-02-12
申请人： Yu Akaki , Fumio Yamashita , Yasuo Takaya , Osamu Isozaki
发明人： Yu Akaki , Fumio Yamashita , Yasuo Takaya , Osamu Isozaki
IPC分类号： C08F2/46 , C08G59/68 , C08G65/14 , C08G65/18 , C09D133/06
CPC分类号： C08G65/18 , C08G59/68 , C08G65/14 , C09D133/068
摘要： An active energy ray-curable resin composition, particularly an active energy ray-curable coating composition, both comprising:(A) a resin having oxetane functional groups and epoxy groups in the molecule, and(B) a photo-induced cationic polymerization initiator.
摘要翻译： 一种活性能量射线固化性树脂组合物，特别是活性能量射线固化型涂料组合物，其特征在于，其包含：（A）分子中具有氧杂环丁烷官能团的树脂和环氧基，（B）光诱导性阳离子聚合引发剂。
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公开(公告)号：US09636703B2
公开(公告)日：2017-05-02
申请号：US14342579
申请日：2012-09-12
申请人： Naoyuki Iwata , Fumio Yamashita
发明人： Naoyuki Iwata , Fumio Yamashita
IPC分类号： B05D1/36 , B05D3/02 , C09D175/04 , B05D7/00 , C08G18/62 , C08G18/78 , C08G18/79 , C08G18/20 , C08G18/22 , C08G18/24 , C08G18/26 , C08F220/14 , C08F220/18 , C08F220/20 , C08F230/02 , B05D5/08 , B05D7/06 , B05D1/04
CPC分类号： B05D1/36 , B05D1/04 , B05D3/0254 , B05D5/08 , B05D7/06 , B05D7/53 , B05D7/532 , C08F220/14 , C08F220/18 , C08F220/20 , C08F230/02 , C08G18/2063 , C08G18/222 , C08G18/227 , C08G18/244 , C08G18/26 , C08G18/6254 , C08G18/6291 , C08G18/7831 , C08G18/7837 , C08G18/792 , C09D175/04 , Y10T428/31551 , C08F2220/1825 , C08F2220/1808 , C08F220/06 , C08F222/385 , C08F212/08 , C08F2220/1891 , C08F2220/325 , C08F2220/1858
摘要： An object of the present invention is to provide a method for forming a multilayer coating film, the method making it possible to obtain, with excellent curability at low temperatures and in a short period of time, a multilayer coating film exhibiting an excellent finished appearance. The present invention provides a method for forming a multilayer coating film, wherein a substrate is sequentially coated with at least one layer of one or more base coating compositions, and with one or more clear coating compositions, the method being characterized by utilizing a clear coating composition containing a hydroxy-containing acrylic resin (A) having a hydroxy value in a specific range; a polyisocyanate compound (B) having a viscosity in a specific range; and an organometallic catalyst (C) containing a metallic compound (C1) in which the metal is a member selected from the group consisting of zinc, tin, zirconium, bismuth, lead, cobalt, manganese, titanium, aluminum, and molybdenum, and an amidine compound (C2).
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