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64 条记录 (耗时 0.018 秒)

    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature
    22.
    发明授权
    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature 失效
    在低温下在氧化铟锡玻璃基板上制造薄膜多晶硅太阳能电池的方法

    公开(公告)号：US07666706B2

    公开(公告)日：2010-02-23

    申请号：US11987803

    申请日：2007-12-04

    申请人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    发明人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    IPC分类号： H01L21/00

    CPC分类号： H01L31/182 ,  H01L21/02532 ,  H01L21/02667 ,  Y02E10/546 ,  Y02P70/521

    摘要： A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p− poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p− poly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

    摘要翻译： 公开了制造薄膜多晶硅太阳能电池的方法。 在该方法中，通过用透明导电ITO膜涂覆玻璃基板来提供ITO玻璃基板。 在ITO玻璃基板上生长非晶硅膜。 在非晶硅膜上生长铝膜。 铝膜和非晶硅膜退火，因此分别转换和交换成铝 - 硅合金膜和p +多晶硅膜。 在低温等离子体沉积工艺中，在p +多晶硅膜上涂覆p多晶硅膜，在p多晶硅膜上涂覆n +多晶硅膜。 在透明导电ITO膜上提供欧姆接触。 其他欧姆接触提供在n +多晶硅膜上。 在n +多晶硅膜上涂布防反射膜。

    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature
    23.
    发明申请
    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature 失效
    在低温下在氧化铟锡玻璃基板上制造薄膜多晶硅太阳能电池的方法

    公开(公告)号：US20090142877A1

    公开(公告)日：2009-06-04

    申请号：US11987803

    申请日：2007-12-04

    申请人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    发明人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    IPC分类号： H01L21/00

    CPC分类号： H01L31/182 ,  H01L21/02532 ,  H01L21/02667 ,  Y02E10/546 ,  Y02P70/521

    摘要： A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film arte annealed and therefore converted into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p− poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p− poly-crystalline silicon film. An ohm contact is provided on the transparent and conductive ITO film. Other ohm contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

    摘要翻译： 公开了制造薄膜多晶硅太阳能电池的方法。 在该方法中，通过用透明导电ITO膜涂覆玻璃基板来提供ITO玻璃基板。 在ITO玻璃基板上生长非晶硅膜。 在非晶硅膜上生长铝膜。 铝膜和非晶硅膜退火，因此分别转化为铝 - 硅合金膜和p +多晶硅膜。 在低温等离子体沉积工艺中，在p +多晶硅膜上涂覆p多晶硅膜，在p多晶硅膜上涂覆n +多晶硅膜。 在透明导电ITO膜上提供欧姆接触。 在n +多晶硅膜上提供其他欧姆接触。 在n +多晶硅膜上涂布防反射膜。

    Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell
    24.
    发明申请
    Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell 审中-公开
    制造用作N-P二极管或太阳能电池的电极的镍膜的方法

    公开(公告)号：US20130071967A1

    公开(公告)日：2013-03-21

    申请号：US13238122

    申请日：2011-09-21

    申请人： Yu-Han Su ,  Wei-Yang Ma ,  Tsun-Neng Yang

    发明人： Yu-Han Su ,  Wei-Yang Ma ,  Tsun-Neng Yang

    IPC分类号： H01L21/283 ,  H01L31/18

    CPC分类号： H01L21/28518 ,  H01L21/288 ,  H01L31/022425 ,  Y02E10/50

    摘要： Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating.

    摘要翻译： 公开了一种用于制造用作n-p二极管或太阳能电池的电极的镍膜的方法。 使用光源照射n-p二极管或太阳能电池的n型表面，从而在n-p二极管或太阳能电池中产生电子 - 空穴对。 对于在n-p界面处的电场效应，电子漂移并因此积聚在n型表面上。 使用电镀剂，将二极管电压加入到在n型表面上进行镍化学镀的化学势。 镍膜可以用作接触电极和二极管或太阳能电池之间的缓冲层。 镍膜降低了接触电阻，以防止二次电池或太阳能电池的效率降低，否则二次电池或太阳能电池的效率将由电极原子在随后的电镀中扩散而引起。

    Silicon-rich-oxide white light photodiode
    25.
    发明授权
    Silicon-rich-oxide white light photodiode 失效
    富硅氧化物白光光电二极管

    公开(公告)号：US07569864B2

    公开(公告)日：2009-08-04

    申请号：US11416146

    申请日：2006-05-03

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Wei-Yang Ma

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Wei-Yang Ma

    IPC分类号： H01L31/12 ,  H01L31/00

    CPC分类号： H01L33/502 ,  H01L33/0079

    摘要： A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.

    摘要翻译： 白光光电二极管具有膜层和紫外（UV）光电二极管。 膜层由富含硅的氧化物制成; 并通过化学气相沉积形成。 可以通过用UV光电二极管的紫外线激发膜层来产生白光。

    Method for fabricating crystalline silicon thin films
    28.
    发明申请
    Method for fabricating crystalline silicon thin films 失效
    制造晶体硅薄膜的方法

    公开(公告)号：US20080118662A1

    公开(公告)日：2008-05-22

    申请号：US11603043

    申请日：2006-11-22

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan

    IPC分类号： C23C16/453

    CPC分类号： C23C16/24 ,  C23C16/56

    摘要： An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.

    摘要翻译： 取非晶硅（Si）膜在高温下形成Si-Al（铝）的金属硅化物。 Al原子扩散到非晶Si膜中，用于形成Si-Al的金属硅化物作为核部位。 然后通过加热和退火，获得微晶或纳米晶硅薄膜。 整个过程只是一个过程，只在一个反应​​室中完成。

    In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer
    30.
    发明申请
    In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer 失效
    用于从表面和内部升级的冶金级硅晶片上去除金属杂质的原位吸气方法

    公开(公告)号：US20130149843A1

    公开(公告)日：2013-06-13

    申请号：US13313124

    申请日：2011-12-07

    申请人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    发明人： Jin-Jang Jheng ,  Tsun-Neng Yang ,  Chin-Chen Chiang

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3221

    摘要： An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.

    摘要翻译： 在反应室中连续进行用于从升级的冶金级硅晶片的表面和内部除去杂质的原位吸气方法。 氯化物气与载气混合。 气态混合物用于清洁硅晶片的表面。 然后，在执行热退火之前，气态混合物用于在硅晶片的表面上形成多孔结构。 最后，气态混合物用于在硅晶片的表面上执行热蚀刻，并从硅晶片的表面去除多孔结构。 由于氯化物气体用于清洁硅晶片的表面，并且在硅晶片的表面上形成多孔结构，所以外部吸气性得到改善。 此外，有效地从硅晶片的内部除去间隙型金属杂质。