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    Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles
    1.
    发明授权
    Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles 有权
    用纳米金属颗粒形式制造具有敏化量子点的太阳能电池的方法

    公开(公告)号：US07915068B2

    公开(公告)日：2011-03-29

    申请号：US12076244

    申请日：2008-03-14

    申请人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L21/00 ,  H01L27/14 ,  H01L31/0232

    CPC分类号： H01G9/20 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/777 ,  Y10S977/81 ,  Y10S977/948

    摘要： There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

    摘要翻译： 公开了以纳米金属晶体的形式制造具有致敏量子点的太阳能电池的方法。 首先，提供第一基板。 然后，在第一基板的一侧上生长硅基膜。 执行图案掩模处理以蚀刻硅基膜的区域。 在从硅基膜暴露的第一基板的区域上设置纳米金属颗粒。 金属电极附接到第一基板的相对侧。 提供第二基板。 在第二基板上生长透明导电膜。 在透明导电膜上生长金属催化膜。 第二基板，透明导电膜和金属催化膜一起形成层压体。 将层压体倒置并设置在第一基板上。 最后，在第一基板和金属催化膜之间提供电解质。

    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature
    4.
    发明授权
    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature 失效
    在低温下在氧化铟锡玻璃基板上制造薄膜多晶硅太阳能电池的方法

    公开(公告)号：US07666706B2

    公开(公告)日：2010-02-23

    申请号：US11987803

    申请日：2007-12-04

    申请人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    发明人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    IPC分类号： H01L21/00

    CPC分类号： H01L31/182 ,  H01L21/02532 ,  H01L21/02667 ,  Y02E10/546 ,  Y02P70/521

    摘要： A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p− poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p− poly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

    摘要翻译： 公开了制造薄膜多晶硅太阳能电池的方法。 在该方法中，通过用透明导电ITO膜涂覆玻璃基板来提供ITO玻璃基板。 在ITO玻璃基板上生长非晶硅膜。 在非晶硅膜上生长铝膜。 铝膜和非晶硅膜退火，因此分别转换和交换成铝 - 硅合金膜和p +多晶硅膜。 在低温等离子体沉积工艺中，在p +多晶硅膜上涂覆p多晶硅膜，在p多晶硅膜上涂覆n +多晶硅膜。 在透明导电ITO膜上提供欧姆接触。 其他欧姆接触提供在n +多晶硅膜上。 在n +多晶硅膜上涂布防反射膜。

    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature
    5.
    发明申请
    Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature 失效
    在低温下在氧化铟锡玻璃基板上制造薄膜多晶硅太阳能电池的方法

    公开(公告)号：US20090142877A1

    公开(公告)日：2009-06-04

    申请号：US11987803

    申请日：2007-12-04

    申请人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    发明人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

    IPC分类号： H01L21/00

    CPC分类号： H01L31/182 ,  H01L21/02532 ,  H01L21/02667 ,  Y02E10/546 ,  Y02P70/521

    摘要： A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film arte annealed and therefore converted into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p− poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p− poly-crystalline silicon film. An ohm contact is provided on the transparent and conductive ITO film. Other ohm contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

    摘要翻译： 公开了制造薄膜多晶硅太阳能电池的方法。 在该方法中，通过用透明导电ITO膜涂覆玻璃基板来提供ITO玻璃基板。 在ITO玻璃基板上生长非晶硅膜。 在非晶硅膜上生长铝膜。 铝膜和非晶硅膜退火，因此分别转化为铝 - 硅合金膜和p +多晶硅膜。 在低温等离子体沉积工艺中，在p +多晶硅膜上涂覆p多晶硅膜，在p多晶硅膜上涂覆n +多晶硅膜。 在透明导电ITO膜上提供欧姆接触。 在n +多晶硅膜上提供其他欧姆接触。 在n +多晶硅膜上涂布防反射膜。

    Method for making an anti-reflection film of a solar cell
    7.
    发明申请
    Method for making an anti-reflection film of a solar cell 有权
    制造太阳能电池防反射膜的方法

    公开(公告)号：US20100279453A1

    公开(公告)日：2010-11-04

    申请号：US12007156

    申请日：2008-01-07

    申请人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02168 ,  C23C16/36 ,  C23C16/505 ,  C23C16/56 ,  Y02E10/50

    摘要： A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p− type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p− type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.

    摘要翻译： 公开了制造太阳能电池的防反射膜的方法。 该方法包括提供层压体的步骤。 层压体包括陶瓷基板，钛基复合膜，p +型多晶硅背面场，p型多晶硅均热膜和n +型多晶硅发射体。 在等离子体增强气相沉积装置中，用SiCNO：Ar等离子体钝化层压体，从而填充n +型多晶硅发射体表面的硅原子的悬挂键，晶界处的硅晶粒的悬挂键 的p型多晶硅均热膜和p +型多晶硅表面场中的硅原子的悬挂键。 最后，n +型多晶硅发射体涂覆有SiCN / SiO2的防反射膜。