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    Position controlled dual magnetron
    22.
    发明授权
    Position controlled dual magnetron 有权
    位置控制双磁控管

    公开(公告)号：US07767064B2

    公开(公告)日：2010-08-03

    申请号：US11553880

    申请日：2006-10-27

    申请人： Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

    发明人： Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

    IPC分类号： C23C14/00

    CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455

    摘要： A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.

    摘要翻译： 一种用于等离子体溅射的双磁控管，包括源磁控管和辅助磁控管，每个磁控管以相应的半径围绕靶的中心旋转。 磁控管的位置可以在溅射沉积和目标清洁之间沿互补的径向移动。 磁控管具有不同的尺寸，强度和不平衡特性。 源极磁控管是较小，较强和不平衡的源磁控管，并且在溅射沉积和蚀刻中位于晶片边缘附近。 辅助磁控管较大，弱且更均衡，用于清洁靶的中心并在溅射沉积中引导来自源磁控管的溅射离子。 每个磁控管可以使其等离子体在其径向外部位置短路。

    Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry
    23.
    发明授权
    Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry 有权
    多轨磁控管具有更均匀的沉积和减小的旋转不对称性

    公开(公告)号：US07186319B2

    公开(公告)日：2007-03-06

    申请号：US11029641

    申请日：2005-01-05

    申请人： Hong S. Yang ,  Tza-Jing Gung ,  Jian-Xin Lei ,  Ted Guo

    发明人： Hong S. Yang ,  Tza-Jing Gung ,  Jian-Xin Lei ,  Ted Guo

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3408 ,  H01J37/3405

    摘要： A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.

    摘要翻译： 具有卷绕形状且围绕其旋转的目标中心不对称的多轨磁控管。 等离子体轨道形成为相对的内部和外部磁极之间的闭合回路，优选地相对于目标中心并且优选地通过旋转轴线而形成为两个或三个径向布置且螺旋形的反向传播轨迹。 极点形状可以被优化以产生符合函数L = ar 的累积轨迹长度分布。 经过数次迭代的计算机化优化，可以测试极点形状，使其在制造的极片中具有不同的磁体分布的溅射均匀性。 如果均匀性不能令人满意，则使用不同的n值，不同数量的轨道或不同的极宽重复设计迭代。 优化可减少方位角侧壁不对称性，提高径向沉积均匀性。

    POSITION CONTROLLED DUAL MAGNETRON
    25.
    发明申请
    POSITION CONTROLLED DUAL MAGNETRON 有权
    位置控制双磁铁

    公开(公告)号：US20080099329A1

    公开(公告)日：2008-05-01

    申请号：US11553880

    申请日：2006-10-27

    申请人： Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

    发明人： Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

    IPC分类号： C23C14/00

    CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455

    摘要： A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.

    摘要翻译： 一种用于等离子体溅射的双磁控管，包括源磁控管和辅助磁控管，每个磁控管以相应的半径围绕靶的中心旋转。 磁控管的位置可以在溅射沉积和目标清洁之间沿互补的径向移动。 磁控管具有不同的尺寸，强度和不平衡特性。 源极磁控管是较小，较强和不平衡的源磁控管，并且在溅射沉积和蚀刻中位于晶片边缘附近。 辅助磁控管较大，弱且更均衡，用于清洁靶的中心并在溅射沉积中引导来自源磁控管的溅射离子。 每个磁控管可以使其等离子体在其径向外部位置短路。

    Pressure switched dual magnetron
    26.
    发明申请
    Pressure switched dual magnetron 失效
    压力开关双磁控管

    公开(公告)号：US20060060470A1

    公开(公告)日：2006-03-23

    申请号：US10949829

    申请日：2004-09-23

    申请人： Tza-Jing Gung

    发明人： Tza-Jing Gung

    IPC分类号： C23C14/00 ,  C23C14/32

    CPC分类号： C23C14/35

    摘要： A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power while the other magnetron, if it does switch, switches in complementary fashion. When the two magnetrons are mounted at different radii, the switching effects a effective movement of the magnetron such that different areas of the target are exposed to a sputtering plasma. In particular, a small unbalanced magnetron may scan the target edge to produce a highly ionized sputter flux and a larger magnetron positioned near the center can be switched on to clean sputter material redeposited on the target center.

    摘要翻译： 用于等离子体溅射的双磁控管，其中两个明显不同的磁控管安装在围绕目标背面的中心轴线旋转的公共板上。 磁控管中的至少一个通过腔室压力或目标功率的变化而被接通和关断，而另一个磁控管（如果它是切换）则以互补的方式切换。 当两个磁控管安装在不同的半径处时，切换会影响磁控管的有效运动，使靶的不同区域暴露于溅射等离子体。 特别地，小的不平衡磁控管可以扫描目标边缘以产生高度电离的溅射通量，并且可以接通位于中心附近的较大的磁控管，以清洁重新沉积在目标中心上的溅射材料。

    Methods of forming layers on substrates
    27.
    发明授权
    Methods of forming layers on substrates 有权
    在基材上形成层的方法

    公开(公告)号：US08476162B2

    公开(公告)日：2013-07-02

    申请号：US13269243

    申请日：2011-10-07

    申请人： Tae Hong Ha ,  Winsor Lam ,  Tza-Jing Gung ,  Joung Joo Lee

    发明人： Tae Hong Ha ,  Winsor Lam ,  Tza-Jing Gung ,  Joung Joo Lee

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  H01L21/2855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76873

    摘要： Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer.

    摘要翻译： 本文提供了在基板上形成层的方法。 在一些实施例中，在设置在处理室中的衬底上形成层的方法可以包括在衬底的一个或多个特征内沉积包含钛的阻挡层; 在通过向目标施加DC电力的情况下，在由处理气体形成的等离子体存在下溅射材料，在处理室内保持小于约500mTorr的压力，并提供高达约5000W的 衬底偏置射频功率以在阻挡层顶上沉积包含该材料的晶种层。

    Magnetron having continuously variable radial position
    28.
    发明授权
    Magnetron having continuously variable radial position 有权
    磁控管具有连续可变的径向位置

    公开(公告)号：US07736473B2

    公开(公告)日：2010-06-15

    申请号：US11226858

    申请日：2005-09-14

    申请人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

    发明人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

    摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

    摘要翻译： 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

    Variable quadruple electromagnet array in plasma processing
    29.
    发明授权
    Variable quadruple electromagnet array in plasma processing 有权
    等离子体处理中的可变四极电磁体阵列

    公开(公告)号：US07527713B2

    公开(公告)日：2009-05-05

    申请号：US10950349

    申请日：2004-09-23

    申请人： Tza-Jing Gung ,  Mark A. Perrin ,  Andrew Gillard

    发明人： Tza-Jing Gung ,  Mark A. Perrin ,  Andrew Gillard

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C23B11/00 ,  C25B13/00

    CPC分类号： H01J37/3408 ,  H01J37/32688

    摘要： A quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor, preferably in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the gas sputtering the wafer. The coil array may include a tubular magnetic core, particularly useful for suppressing stray fields. A water cooling coil may be wrapped around the coil array to cool all the coils. The electromagnets can be powered in different relative polarities in a multi-step process.

    摘要翻译： 一个四重电磁线圈阵列，其围绕室等离子体溅射反应器的侧壁外部的腔室轴线同轴布置，优选地在室内的RF线圈的背面。 可以单独控制线圈电流以产生不同的磁场分布，例如在溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和溅射蚀刻模式之间，其中RF线圈支撑气体溅射 晶圆。 线圈阵列可以包括管状磁芯，特别适用于抑制杂散磁场。 水冷盘管可缠绕在线圈阵列上以冷却所有线圈。 电磁铁可以在多步骤过程中以不同的相对极性供电。

    Tubular magnet as center pole in unbalanced sputtering magnetron
    30.
    发明授权
    Tubular magnet as center pole in unbalanced sputtering magnetron 有权

    公开(公告)号：US06663754B2

    公开(公告)日：2003-12-16

    申请号：US09835104

    申请日：2001-04-13

    申请人： Tza-Jing Gung

    发明人： Tza-Jing Gung

    IPC分类号： C23C1435

    CPC分类号： H01J37/3455 ,  H01J37/3408

    摘要： A DC magnetron sputter reactor capable of creating a self-ionized plasma and including a small unbalanced magnetron rotating about the back of the target. The magnetron includes an outer pole of one magnetic polarity in a closed band shape surrounding an inner pole of the opposed magnetic polarity and of lesser total magnetic intensity. The inner pole, for example, including a tubular magnet has a central, magnet free passage allowing magnetic field to pass therethrough from one side to the other of the inner pole. The outer band may be generally triangular with the base and apex composed of circular segments smoothly joined to straight sides. The pole face of the inner pole may be cantilevered away from the inner pole towards the apex of the outer pole.