公开(公告)号：US20100243440A1

公开(公告)日：2010-09-30

申请号：US12794452

申请日：2010-06-04

申请人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

发明人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

摘要翻译： 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

公开(公告)号：US07736473B2

公开(公告)日：2010-06-15

申请号：US11226858

申请日：2005-09-14

申请人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

发明人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

摘要翻译： 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

公开(公告)号：US08685215B2

公开(公告)日：2014-04-01

申请号：US12794452

申请日：2010-06-04

申请人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

发明人： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

摘要翻译： 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

公开(公告)号：US07018515B2

公开(公告)日：2006-03-28

申请号：US10949735

申请日：2004-09-23

申请人： Tza-Jing Gung ,  Hong S. Yang ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Keith A. Miller ,  Vincent E. Burkhart

发明人： Tza-Jing Gung ,  Hong S. Yang ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Keith A. Miller ,  Vincent E. Burkhart

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

摘要翻译： 一种双位磁控管，其围绕溅射靶的背面的中心轴旋转，特别是用于将阻挡材料的靶的边缘溅射到晶片上，并且清理物质再沉积在靶的中心。 在目标清洁期间，晶片偏置减小。 在一个实施例中，弧形磁控管被支撑在枢转臂上，枢转臂在固定到旋转轴的支架的端部上枢转。 弹簧偏压枢转臂，使得磁控管被推向目标中心并覆盖在目标中心上方。 提高旋转速度的离心力克服了弹簧偏压，并将磁控管移动到外部位置，长磁导管尺寸与目标边缘对齐。 机械停止可防止任何方向上的过度运动。 其他机构包括线性滑块和致动器。

公开(公告)号：US20090308732A1

公开(公告)日：2009-12-17

申请号：US12482713

申请日：2009-06-11

申请人： Yong Cao ,  Maurice E. Ewert ,  Xianmin Tang ,  Keith A. Miller ,  Daniel C. Lubben ,  Umesh M. Kelkar ,  Tza-Jing Gung ,  Anantha K. Subramani

发明人： Yong Cao ,  Maurice E. Ewert ,  Xianmin Tang ,  Keith A. Miller ,  Daniel C. Lubben ,  Umesh M. Kelkar ,  Tza-Jing Gung ,  Anantha K. Subramani

IPC分类号： C23C14/34

CPC分类号： C23C14/35 ,  C23C14/046 ,  H01J37/34 ,  H01J37/3447

摘要： Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

摘要翻译： 本发明的实施例一般涉及用于均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，溅射沉积系统包括准直器，其具有从准直器的中心区域到准直器的外围区域的纵横比减小的孔。 在一个实施例中，准直器经由包括内螺纹紧固件和外螺纹紧固件的组合的支架构件联接到接地屏蔽件。 在另一个实施例中，准直器一体地附接到接地屏蔽。 在一个实施例中，溅射沉积材料的方法包括在高和低值之间使衬底支撑上的偏压脉动。

公开(公告)号：US20120231633A1

公开(公告)日：2012-09-13

申请号：US13046261

申请日：2011-03-11

申请人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

发明人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC分类号： H01L21/30 ,  H01L21/00

CPC分类号： C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：US20090308739A1

公开(公告)日：2009-12-17

申请号：US12482846

申请日：2009-06-11

申请人： Martin Lee Riker ,  Maurice E. Ewert ,  Anantha K. Subramani

发明人： Martin Lee Riker ,  Maurice E. Ewert ,  Anantha K. Subramani

IPC分类号： C23C14/34

CPC分类号： H01J37/34 ,  H01J37/3447

摘要： Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.

摘要翻译： 本文描述的实施例通常涉及用于将材料均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，提供了用于与位于溅射靶和衬底支撑座之间的屏蔽构件进行机械和电耦合的准直器。 准直器包括中心区域和周边区域，其中准直器具有穿过其中延伸的多个孔，并且位于中心区域中的孔具有比位于周边区域中的孔更高的纵横比。

公开(公告)号：US08404048B2

公开(公告)日：2013-03-26

申请号：US13046261

申请日：2011-03-11

申请人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

发明人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC分类号： C23C16/46 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：US06899796B2

公开(公告)日：2005-05-31

申请号：US10428476

申请日：2003-05-01

申请人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

发明人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768 ,  B05D1/36

CPC分类号： C23C14/046 ,  C23C14/185 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76877

摘要： A two-step method of filling copper into a high-aspect ratio via or dual-damascene structure. The first step sputters at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole. The initial copper sputtering is preferably performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter resulting overhangs from the corners while depositing deep in the hole. The second step may include either electrochemical plating or sputtering performed at a higher temperature, e.g., at least 200° C. and with lower wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma.

摘要翻译： 将铜填充到高纵横比或双镶嵌结构的两步法。 第一步在不超过100℃的低温下进行喷射，并且至少部分高晶片偏置，从而填充孔的下半部分。 初始铜溅射优选通过多个低水平和高水平基座偏压的周期进行，以在暴露的拐角上沉积铜，并且在沉积在孔中深处时从角部溅射所得到的突出端。 第二步可以包括在较高温度例如至少200℃进行的电化学电镀或溅射，并且具有较低的晶片偏置以完成孔填充。 在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。

公开(公告)号：US08637410B2

公开(公告)日：2014-01-28

申请号：US13082968

申请日：2011-04-08

申请人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

发明人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

IPC分类号： H01L21/31

CPC分类号： C23C16/08 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.

摘要翻译： 提供了使用CVD和ALD技术形成和处理纯金属层的方法。 在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。 在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。 还提供了防止氢等离子体渗透金属前体层的方法。