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    Gas flow equalizer plate suitable for use in a substrate process chamber
    2.
    发明授权
    Gas flow equalizer plate suitable for use in a substrate process chamber 失效
    气流平衡板，适用于衬底加工室

    公开(公告)号：US08075728B2

    公开(公告)日：2011-12-13

    申请号：US12038887

    申请日：2008-02-28

    申请人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    发明人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

    CPC分类号： H01J37/32449 ,  H01J37/3244

    摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.

    摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

    GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER
    3.
    发明申请
    GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER 失效
    气体流平衡板适用于基板工艺室

    公开(公告)号：US20090218043A1

    公开(公告)日：2009-09-03

    申请号：US12038887

    申请日：2008-02-28

    申请人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    发明人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32449 ,  H01J37/3244

    摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.

    摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

    Electrostatic chuck with reduced arcing
    5.
    发明授权
    Electrostatic chuck with reduced arcing 有权
    静电卡盘减少电弧

    公开(公告)号：US08270141B2

    公开(公告)日：2012-09-18

    申请号：US12884967

    申请日：2010-09-17

    申请人： Michael D. Willwerth ,  David Palagashvili ,  Douglas A. Buchberger, Jr. ,  Michael G. Chafin

    发明人： Michael D. Willwerth ,  David Palagashvili ,  Douglas A. Buchberger, Jr. ,  Michael G. Chafin

    IPC分类号： H02T23/00

    CPC分类号： H01L21/6833 ,  Y10T279/23

    摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.

    摘要翻译： 本文提供了静电卡盘的实施例。 在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定， 沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合的阶梯状的内侧壁，以在其间界定非线性界面; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。

    LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER
    7.
    发明申请
    LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER 有权
    用于等离子体加工室的低斜边缘环

    公开(公告)号：US20130032478A1

    公开(公告)日：2013-02-07

    申请号：US13649196

    申请日：2012-10-11

    申请人： Changhun Lee ,  Michael D. Willwerth ,  Hoan Nguyen

    发明人： Changhun Lee ,  Michael D. Willwerth ,  Hoan Nguyen

    IPC分类号： C23F1/00

    CPC分类号： H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68735 ,  H01L21/68757

    摘要： Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.

    摘要翻译： 提供了一种用于等离子体处理室的盖环的实施例。 在一个实施例中，用于等离子体处理室的盖环包括由含钇（Y）的材料制成的环形主体。 主体包括具有内定位环和外定位环的底表面。 内定位环比外定位环更远离主体。 主体包括具有主壁和由基本上水平的平台分开的次级壁的内径壁。 身体还包括顶表面，其具有在顶点处会聚内倾斜表面的外倾斜顶表面。 内部倾斜表面与垂直于身体中心线的线形成小于约70度的角度。

    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
    9.
    发明授权
    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck 有权
    高AC电流高RF功率AC-RF去耦滤波器用于等离子体反应器加热静电卡盘

    公开(公告)号：US07777152B2

    公开(公告)日：2010-08-17

    申请号：US11671927

    申请日：2007-02-06

    申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    IPC分类号： B23K9/02 ,  H01P5/08 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

    摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

    摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

    EXTENDED CHAMBER LINER FOR IMPROVED MEAN TIME BETWEEN CLEANINGS OF PROCESS CHAMBERS
    10.
    发明申请
    EXTENDED CHAMBER LINER FOR IMPROVED MEAN TIME BETWEEN CLEANINGS OF PROCESS CHAMBERS 审中-公开
    用于改进过程池清洁之间的平均时间的扩展室内衬

    公开(公告)号：US20100108263A1

    公开(公告)日：2010-05-06

    申请号：US12261976

    申请日：2008-10-30

    申请人： HOAN Hai NGUYEN ,  Michael D. Willwerth

    发明人： HOAN Hai NGUYEN ,  Michael D. Willwerth

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32495 ,  H01J37/32623

    摘要： Embodiments of liners for semiconductor process chambers are provided herein. In some embodiments, a liner for a semiconductor process chamber includes a first portion configured to line at least a portion of an inner volume of the semiconductor process chamber and a second portion configured to line at least a portion of a pump port of the semiconductor process chamber. In some embodiments, the first portion and the second portion are coupled together. In some embodiments, the first portion and the second portion of the liner may be fabricated a single piece. In some embodiments, the liner may be disposed in a process chamber having an inner volume and a pump port fluidly coupled to the inner volume.

    摘要翻译： 本文提供了用于半导体处理室的衬垫的实施例。 在一些实施例中，用于半导体处理室的衬垫包括构造成对半导体处理室的内部体积的至少一部分进行排列的第一部分和被配置为将半导体工艺的泵口的至少一部分排列的第二部分 房间。 在一些实施例中，第一部分和第二部分耦合在一起。 在一些实施例中，衬垫的第一部分和第二部分可以制成单件。 在一些实施例中，衬套可以设置在具有内部容积的处理室和与内部容积流体耦合的泵口。