Controlled electrochemical polishing method
    21.
    发明授权
    Controlled electrochemical polishing method 失效
    控制电化学抛光方法

    公开(公告)号:US07998335B2

    公开(公告)日:2011-08-16

    申请号:US11150944

    申请日:2005-06-13

    IPC分类号: C25F3/18

    摘要: The invention relates to a method of polishing a substrate comprising at least one metal layer by applying an electrochemical potential between the substrate and at least one electrode in contact with a polishing composition comprising a reducing agent or an oxidizing agent.

    摘要翻译: 本发明涉及一种通过在衬底和至少一个与包含还原剂或氧化剂的抛光组合物接触的电极之间施加电化学电势来抛光包含至少一个金属层的衬底的方法。

    CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METHOD FOR USING THE SAME
    22.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METHOD FOR USING THE SAME 有权
    化学机械抛光组合物及其使用方法

    公开(公告)号:US20090152240A1

    公开(公告)日:2009-06-18

    申请号:US12393489

    申请日:2009-02-26

    IPC分类号: B44C1/22

    CPC分类号: C09G1/02

    摘要: The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water.

    摘要翻译: 本发明提供了用两种化学机械抛光组合物之一抛光含贵金属的基材的方法。 第一化学机械抛光组合物包含(a)包含α-氧化铝的磨料,(b)约0.05至约50mmol / kg的钙,锶,钡或其混合物的离子,和(c)液体载体, 水。 第二化学机械抛光组合物包含(a)选自α-氧化铝,γ-氧化铝,δ-氧化铝,θ-氧化铝,金刚石,碳化硼,碳化硅,碳化钨,氮化钛和 其混合物,(b)约0.05-约3.5mmol / kg的钙,锶,钡,镁,锌或其混合物的离子,和(c)包含水的液体载体。

    Chemical-mechanical polishing of metals in an oxidized form
    23.
    发明授权
    Chemical-mechanical polishing of metals in an oxidized form 有权
    化学机械抛光氧化形式的金属

    公开(公告)号:US07288021B2

    公开(公告)日:2007-10-30

    申请号:US10753138

    申请日:2004-01-07

    CPC分类号: H01L21/3212

    摘要: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

    摘要翻译: 本发明提供了一种用于抛光包含氧化形式的金属的衬底的方法,所述方法包括以下步骤:(a)提供包含氧化形式的金属的衬底,(b)将衬底的一部分与化学 - 机械抛光系统,包括:(i)抛光组分,(ii)还原剂和(iii)液体载体,和(c)研磨至少一部分氧化形式的金属以抛光所述基材。 还原剂可以选自3-羟基-4-吡咯烷酮,α-羟基-γ-丁内酯,抗坏血酸,硼烷,硼氢化物,二烷基胺硼烷,甲醛,甲酸,氢,氢醌,羟胺,次磷酸 亚磷酸,氧化态的金属或金属离子具有小于氧化形式的金属的标准氧化还原电位,三羟基苯,溶剂化电子,亚硫酸,其盐及其混合物的标准氧化还原电位。

    ECMP system
    24.
    发明申请
    ECMP system 审中-公开
    ECMP系统

    公开(公告)号:US20050167266A1

    公开(公告)日:2005-08-04

    申请号:US10769936

    申请日:2004-02-02

    CPC分类号: C25F7/00 C25D21/12

    摘要: An improved electrochemical IR calculation and correction system allows for the precise measurement and control of the interfacial voltage drop at an electrode double layer. In an exemplary use of the invention, this improved IR correction ability allows ECMP to be used for precise surface polishing that would otherwise be impractical with ECMP. The system according to an embodiment of the invention comprises a working electrode, a counter electrode, and a reference electrode. An electrical perturbation is applied to the system and a unique IR calculation circuit is used to determine the IR drop. In an embodiment of the invention applicable to ECMP, an IR correction is provided such that the polishing at the surface of interest is precisely controlled despite the IR drop in the system.

    摘要翻译: 改进的电化学IR计算和校正系统允许精确测量和控制电极双层的界面电压降。 在本发明的示例性用途中,这种改进的IR校正能力允许ECMP用于精确的表面抛光,否则ECMP将不实用。 根据本发明实施例的系统包括工作电极,对电极和参考电极。 电气扰动被施加到系统,并且使用唯一的IR计算电路来确定IR下降。 在适用于ECMP的本发明的实施例中,提供了IR校正,使得尽管系统中的IR降低,但在感兴趣的表面处的抛光被精确地控制。

    Chemical-mechanical polishing of metals in an oxidized form
    25.
    发明申请
    Chemical-mechanical polishing of metals in an oxidized form 有权
    化学机械抛光氧化形式的金属

    公开(公告)号:US20050148290A1

    公开(公告)日:2005-07-07

    申请号:US10753138

    申请日:2004-01-07

    CPC分类号: H01L21/3212

    摘要: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

    摘要翻译: 本发明提供了一种用于抛光包含氧化形式的金属的衬底的方法,所述方法包括以下步骤:(a)提供包含氧化形式的金属的衬底,(b)将衬底的一部分与化学 - 机械抛光系统,包括:(i)抛光组分,(ii)还原剂和(iii)液体载体,和(c)研磨至少一部分氧化形式的金属以抛光所述基材。 还原剂可以选自3-羟基-4-吡咯烷酮,α-羟基-γ-丁内酯,抗坏血酸,硼烷,硼氢化物,二烷基胺硼烷,甲醛,甲酸,氢,氢醌,羟胺,次磷酸 亚磷酸,氧化态的金属或金属离子具有小于氧化形式的金属的标准氧化还原电位,三羟基苯,溶剂化电子,亚硫酸,其盐及其混合物的标准氧化还原电位。

    Process for fabricating optical switches
    26.
    发明授权
    Process for fabricating optical switches 失效
    制造光开关的工艺

    公开(公告)号:US06853474B2

    公开(公告)日:2005-02-08

    申请号:US10117554

    申请日:2002-04-04

    IPC分类号: G02F1/11 G02F1/33

    CPC分类号: G02F1/11 G02F1/33

    摘要: A process for fabricating micro-acousto-optic modulators using microelectronics fabrication technology. First, a set of trenches is etched into a substrate. Then, a transducer material is deposited into these trenches, followed by removal of any transducer material located above the surface of the substrate. Next, a second set of trenches is etched on both sides of the transducer material, between the transducer material and the substrate. Then, an electrode material is deposited into the second set of trenches. Finally, any electrode material located above the surface of the substrate is removed such that the surface of the substrate is co-planar with the electrode and transducer materials.

    摘要翻译: 使用微电子制造技术制造微声光调制器的工艺。 首先,将一组沟槽蚀刻到衬底中。 然后,将换能器材料沉积到这些沟槽中,随后移除位于衬底表面上方的任何换能器材料。 接下来,在换能器材料的两侧之间,在换能器材料和基底之间蚀刻第二组沟槽。 然后,将电极材料沉积到第二组沟槽中。 最后,去除位于衬底表面上方的任何电极材料,使得衬底的表面与电极和换能器材料共面。

    Metal-passivating CMP compositions and methods
    27.
    发明授权
    Metal-passivating CMP compositions and methods 有权
    金属钝化CMP组合物和方法

    公开(公告)号:US08435421B2

    公开(公告)日:2013-05-07

    申请号:US13004113

    申请日:2011-01-11

    摘要: The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.

    摘要翻译: 本发明提供用于抛光含铜和/或含银基材的化学机械抛光(CMP)组合物和方法。 本发明的组合物在水性载体中包含颗粒磨料,初始成膜金属络合剂和二次成膜金属钝化剂。 还公开了用本发明的组合物研磨衬底的方法。

    Use of CMP for aluminum mirror and solar cell fabrication
    28.
    发明授权
    Use of CMP for aluminum mirror and solar cell fabrication 有权
    使用CMP用于铝镜和太阳能电池制造

    公开(公告)号:US08062096B2

    公开(公告)日:2011-11-22

    申请号:US11173518

    申请日:2005-06-30

    IPC分类号: B24B1/00

    摘要: The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abrading at least a portion of the surface to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein the abrasive is in particulate form and is suspended in the liquid carrier.

    摘要翻译: 本发明涉及一种抛光包含铝的基材的表面的方法,包括使基材的表面与抛光垫接触,以及抛光组合物,其包含研磨剂,氧化铝的试剂和液体载体,并在 至少一部分表面以从衬底去除至少一些铝并抛光衬底的表面,其中磨料是颗粒形式并悬浮在液体载体中。

    CMP of copper/ruthenium substrates
    29.
    发明授权
    CMP of copper/ruthenium substrates 有权
    铜/钌基板的CMP

    公开(公告)号:US07265055B2

    公开(公告)日:2007-09-04

    申请号:US11259645

    申请日:2005-10-26

    IPC分类号: H01L21/302

    CPC分类号: H01L21/3212 C09G1/02 C23F3/04

    摘要: The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.

    摘要翻译: 本发明提供了一种化学机械抛光衬底的方法。 包含钌和铜的基材与包括抛光组分,过氧化氢,有机酸,至少一种包含至少一个氮原子的杂环化合物和水的化学机械抛光系统接触。 抛光组分相对于基底移动,并且研磨衬底的至少一部分以抛光衬底。 抛光系统的pH为约6至约12,钌和铜电接触,并且抛光系统中铜的开路电位与钌的开路电位之间的差为约50mV或更小。

    Polishing composition for noble metals
    30.
    发明授权
    Polishing composition for noble metals 有权
    贵金属抛光组合物

    公开(公告)号:US07161247B2

    公开(公告)日:2007-01-09

    申请号:US10901420

    申请日:2004-07-28

    IPC分类号: H01L23/48 H01L23/52 H01L29/40

    摘要: The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.

    摘要翻译: 本发明提供一种抛光组合物和一种化学机械抛光包含贵金属的基材的方法,所述抛光组合物包含(a)氧化贵金属的氧化剂,(b)选自硫酸盐, 硼酸盐,硝酸盐和磷酸盐,和(c)液体载体。 本发明还提供一种抛光组合物和一种化学机械抛光包含钌的基材的方法,该抛光组合物包含(a)氧化高于+4氧化态的钌的氧化剂,(b)选自下组的抛光添加剂: 由金属螯合聚合物,金属螯合剂,有机硫醇,还原四氧化钌的化合物,内酯和α-羟基羰基化合物组成。