Polishing composition for noble metals
    1.
    发明授权
    Polishing composition for noble metals 有权
    贵金属抛光组合物

    公开(公告)号:US07161247B2

    公开(公告)日:2007-01-09

    申请号:US10901420

    申请日:2004-07-28

    IPC分类号: H01L23/48 H01L23/52 H01L29/40

    摘要: The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.

    摘要翻译: 本发明提供一种抛光组合物和一种化学机械抛光包含贵金属的基材的方法,所述抛光组合物包含(a)氧化贵金属的氧化剂,(b)选自硫酸盐, 硼酸盐,硝酸盐和磷酸盐,和(c)液体载体。 本发明还提供一种抛光组合物和一种化学机械抛光包含钌的基材的方法,该抛光组合物包含(a)氧化高于+4氧化态的钌的氧化剂,(b)选自下组的抛光添加剂: 由金属螯合聚合物,金属螯合剂,有机硫醇,还原四氧化钌的化合物,内酯和α-羟基羰基化合物组成。

    Chemical-mechanical polishing composition and method for using the same
    2.
    发明授权
    Chemical-mechanical polishing composition and method for using the same 有权
    化学机械抛光组合物及其使用方法

    公开(公告)号:US08101093B2

    公开(公告)日:2012-01-24

    申请号:US12393489

    申请日:2009-02-26

    IPC分类号: C03C15/00

    CPC分类号: C09G1/02

    摘要: The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water.

    摘要翻译: 本发明提供了用两种化学机械抛光组合物之一抛光含贵金属的基材的方法。 第一化学机械抛光组合物包含(a)包含α-氧化铝的磨料,(b)约0.05至约50mmol / kg的钙,锶,钡或其混合物的离子,和(c)液体载体, 水。 第二化学机械抛光组合物包含(a)选自α-氧化铝,γ-氧化铝,δ-氧化铝,氧化铝,氧化铝,金刚石,碳化硼,碳化硅,碳化钨,氮化钛, (b)约0.05至约3.5mmol / kg的钙,锶,钡,镁,锌或其混合物的离子,和(c)包含水的液体载体。

    CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METHOD FOR USING THE SAME
    3.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METHOD FOR USING THE SAME 有权
    化学机械抛光组合物及其使用方法

    公开(公告)号:US20090152240A1

    公开(公告)日:2009-06-18

    申请号:US12393489

    申请日:2009-02-26

    IPC分类号: B44C1/22

    CPC分类号: C09G1/02

    摘要: The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water.

    摘要翻译: 本发明提供了用两种化学机械抛光组合物之一抛光含贵金属的基材的方法。 第一化学机械抛光组合物包含(a)包含α-氧化铝的磨料,(b)约0.05至约50mmol / kg的钙,锶,钡或其混合物的离子,和(c)液体载体, 水。 第二化学机械抛光组合物包含(a)选自α-氧化铝,γ-氧化铝,δ-氧化铝,θ-氧化铝,金刚石,碳化硼,碳化硅,碳化钨,氮化钛和 其混合物,(b)约0.05-约3.5mmol / kg的钙,锶,钡,镁,锌或其混合物的离子,和(c)包含水的液体载体。

    Chemical-mechanical polishing of metals in an oxidized form
    4.
    发明授权
    Chemical-mechanical polishing of metals in an oxidized form 有权
    化学机械抛光氧化形式的金属

    公开(公告)号:US07288021B2

    公开(公告)日:2007-10-30

    申请号:US10753138

    申请日:2004-01-07

    CPC分类号: H01L21/3212

    摘要: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

    摘要翻译: 本发明提供了一种用于抛光包含氧化形式的金属的衬底的方法,所述方法包括以下步骤:(a)提供包含氧化形式的金属的衬底,(b)将衬底的一部分与化学 - 机械抛光系统,包括:(i)抛光组分,(ii)还原剂和(iii)液体载体,和(c)研磨至少一部分氧化形式的金属以抛光所述基材。 还原剂可以选自3-羟基-4-吡咯烷酮,α-羟基-γ-丁内酯,抗坏血酸,硼烷,硼氢化物,二烷基胺硼烷,甲醛,甲酸,氢,氢醌,羟胺,次磷酸 亚磷酸,氧化态的金属或金属离子具有小于氧化形式的金属的标准氧化还原电位,三羟基苯,溶剂化电子,亚硫酸,其盐及其混合物的标准氧化还原电位。

    CMP of noble metals
    5.
    发明授权
    CMP of noble metals 有权
    贵金属的CMP

    公开(公告)号:US07160807B2

    公开(公告)日:2007-01-09

    申请号:US10610407

    申请日:2003-06-30

    IPC分类号: H01L21/461 H01L21/302

    CPC分类号: C09G1/02 C23F3/00 H01L21/3212

    摘要: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.

    摘要翻译: 本发明提供了一种抛光衬底的方法,其包括(i)使包含贵金属层的衬底与化学机械抛光系统接触,所述化学机械抛光系统包括(a)抛光组分,(b)氧化剂和(c)液体载体 ,和(ii)研磨贵金属层的至少一部分以抛光基底。 抛光组分选自研磨剂,抛光垫或其组合,氧化剂选自溴酸盐,溴酸盐,次溴酸盐,氯酸盐,亚氯酸盐,次氯酸盐,高氯酸盐,碘酸盐,次碘酸盐 ,高碘酸酯,过氧乙酸,有机卤代氧化合物,其盐,及其组合。 化学机械抛光系统的pH值约为9或更低,氧化剂不产生大量的元素卤素。 本发明还提供了一种使用上述抛光系统抛光包含贵金属层和第二层的衬底的方法,所述抛光系统还包括停止化合物。

    Chemical-mechanical polishing composition and method for using the same
    6.
    发明申请
    Chemical-mechanical polishing composition and method for using the same 审中-公开
    化学机械抛光组合物及其使用方法

    公开(公告)号:US20050211950A1

    公开(公告)日:2005-09-29

    申请号:US10807944

    申请日:2004-03-24

    CPC分类号: C09G1/02

    摘要: The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention also provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, magnesium, zinc, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention further provides methods of polishing a substrate using each of the above-described chemical-mechanical polishing compositions.

    摘要翻译: 本发明提供一种化学机械抛光组合物,其包括:(a)包含α-氧化铝的磨料,(b)约0.05至约50mmol / kg的选自钙,锶,钡中的至少一种金属的离子 ,及其混合物,基于抛光组合物的总重量,和(c)包含水的液体载体。 本发明还提供一种化学机械抛光组合物,其包含:(a)选自α-氧化铝,γ-氧化铝,δ-氧化铝,θ-氧化铝,金刚石,碳化硼,碳化硅,碳化钨, 氮化钛及其混合物,(b)基于总重量,约0.05至约3.5mmol / kg的选自钙,锶,钡,镁,锌及其混合物的至少一种金属的离子 的抛光组合物,和(c)包含水的液体载体。 本发明还提供了使用上述每种化学 - 机械抛光组合物抛光基材的方法。

    Polishing composition for noble metals
    7.
    发明申请
    Polishing composition for noble metals 有权
    贵金属抛光组合物

    公开(公告)号:US20060024967A1

    公开(公告)日:2006-02-02

    申请号:US10901420

    申请日:2004-07-28

    IPC分类号: H01L21/461

    摘要: The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.

    摘要翻译: 本发明提供一种抛光组合物和一种化学机械抛光包含贵金属的基材的方法,所述抛光组合物包含(a)氧化贵金属的氧化剂,(b)选自硫酸盐, 硼酸盐,硝酸盐和磷酸盐,和(c)液体载体。 本发明还提供一种抛光组合物和一种化学机械抛光包含钌的基材的方法,该抛光组合物包含(a)氧化高于+4氧化态的钌的氧化剂,(b)选自下组的抛光添加剂: 由金属螯合聚合物,金属螯合剂,有机硫醇,还原四氧化钌的化合物,内酯和α-羟基羰基化合物组成。

    Chemical-mechanical polishing of metals in an oxidized form
    8.
    发明申请
    Chemical-mechanical polishing of metals in an oxidized form 有权
    化学机械抛光氧化形式的金属

    公开(公告)号:US20050148290A1

    公开(公告)日:2005-07-07

    申请号:US10753138

    申请日:2004-01-07

    CPC分类号: H01L21/3212

    摘要: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

    摘要翻译: 本发明提供了一种用于抛光包含氧化形式的金属的衬底的方法,所述方法包括以下步骤:(a)提供包含氧化形式的金属的衬底,(b)将衬底的一部分与化学 - 机械抛光系统,包括:(i)抛光组分,(ii)还原剂和(iii)液体载体,和(c)研磨至少一部分氧化形式的金属以抛光所述基材。 还原剂可以选自3-羟基-4-吡咯烷酮,α-羟基-γ-丁内酯,抗坏血酸,硼烷,硼氢化物,二烷基胺硼烷,甲醛,甲酸,氢,氢醌,羟胺,次磷酸 亚磷酸,氧化态的金属或金属离子具有小于氧化形式的金属的标准氧化还原电位,三羟基苯,溶剂化电子,亚硫酸,其盐及其混合物的标准氧化还原电位。

    CMP of copper/ruthenium/tantalum substrates
    10.
    发明申请
    CMP of copper/ruthenium/tantalum substrates 审中-公开
    铜/钌/钽基板的CMP

    公开(公告)号:US20080105652A1

    公开(公告)日:2008-05-08

    申请号:US11591730

    申请日:2006-11-02

    IPC分类号: C09K13/00 B44C1/00

    摘要: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic surfactant, calcium ion or magnesium ion, a corrosion inhibitor for copper, and water, wherein the pH of the polishing composition is about 6 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

    摘要翻译: 本发明提供了一种用于抛光基材的化学机械抛光组合物。 抛光组合物包括研磨剂,氧化剂,两亲性非离子表面活性剂,钙离子或镁离子,铜的防腐蚀剂和水,其中抛光组合物的pH为约6至约12.本发明还提供了一种 用上述抛光组合物对衬底进行化学机械研磨的方法。