摘要:
Embodiments of the present disclosure provide an electrowetting display panel and the manufacturing method thereof The electrowetting display panel comprises: a first glass substrate; a second glass substrate provided opposite to the first glass substrate; a cavity provided between the first glass substrate and the second glass substrate; a colored conductive liquid filled into the cavity; and a reflecting conductive element provided on the surface of the first glass substrate facing away from the second glass substrate, and corresponding to the cavity, wherein the reflecting conductive element is used for controlling the light transmissivity of the colored conductive liquid within the cavity according to the voltage applied to the reflecting conductive element and reflecting the light passing through the colored conductive liquid toward the second glass substrate.
摘要:
Embodiments of the present invention disclose a liquid crystal display panel and a method of driving the same. A subpixel unit includes a transmissive portion and a reflective portion, the transmissive portion comprises a transmissive portion thin film transistor and a transmissive pixel electrode connected to a drain of the transmissive portion thin film transistor, the reflective portion comprises a reflective layer, a reflective portion thin film transistor and a reflective pixel electrode connected to a drain of the reflective portion thin film transistor, a gate of the transmissive portion thin film transistor and a gate of the reflective portion thin film transistor each are connected to a gate line of the subpixel unit, and a source of the transmissive portion thin film transistor and a source of the reflective portion thin film transistor are connected to different data lines.
摘要:
A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.
摘要:
An embodiment of the disclosed technology provides a display device comprising an electrophoresis solution tank containing electrophoresis solution and at least a rolling ball used for display colors, the rolling ball being immerged into the electrophoresis solution; and a shelter layer disposed above and covering the electrophoresis solution tank, the shelter layer being made up of an opaque material. A light transmitting hole is formed in the shelter layer and above the core of the rolling ball, so that the light of the color to be currently displayed on the rolling ball passes through the light transmitting hole for display, while the light of the colors not intended to be displayed is blocked by the shelter layer.
摘要:
There is disclosed an array substrate which has a base substrate and data lines and gate lines on the base substrate, The data lines and gate lines intersect with each other to define pixel units, and each pixel unit comprises a pixel electrode, a gate electrode, a source electrode, a drain electrode and an active layer, and the pixel electrode, the gate electrode and the gate line adjoin to the base substrate, and the gate electrode is formed of a same material as that for forming the pixel electrode.
摘要:
According to the present invention, there is provided an organic thin film transistor array substrate and a method for manufacturing the same and a display device. The method for manufacturing the organic thin film transistor array substrate comprises: forming a pattern comprising a source electrode, a drain electrode, a data line and a pixel electrode on a transparent substrate through a first patterning process; forming an organic semiconductor pattern, a gate insulating layer pattern, a pattern comprising a gate electrode and a gate line through a second patterning process on the transparent substrate after the first patterning process; depositing a passivation layer on the transparent substrate after the second patterning process, and forming a pattern comprising a data line pad region, a gate line pad region and a pixel pad region through a third patterning process; and forming a pattern of a common electrode on the transparent substrate after the third patterning process through a fourth patterning process. The technical solutions of the present invention can increase production efficiency of the organic thin film transistor array substrate and reduce production costs.
摘要:
An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.
摘要:
An array substrate and a method for fabricating the same are disclosed. The method for fabricating the array substrate comprises: forming a pattern of a gate electrode (2) and a common electrode (3) on a substrate (1); forming a pattern of a gate insulating layer (4), an active layer (5), a source/drain electrode layer (6) and a first passivation layer (7), wherein the first passivation layer (7) has a via hole and a thin film transistor (TFT) channel window, and the TFT channel window is located above the gate electrode (2); forming a TFT channel and a pixel electrode (9) with slits, wherein the pixel electrode (9) is connected to one of the source/drain electrode (6) through the via hole. The method is not only simple and stable but also improves the TFT quality.
摘要:
A manufacturing method of a TFT array substrate is provided. The method includes the following steps: respectively forming a metal oxide semiconductor layer (3), an etching barrier layer (4), a source electrode (7), a data line, a drain electrode (6), a pixel electrode (5), a gate insulating layer (8), a contact hole, a gate electrode (9) and a gate scanning line on a substrate (1) by patterning processes, wherein the metal oxide semiconductor layer (3) and the etching barrier layer (4) are formed by a same patterning process, and the source electrode (7), the drain electrode (6), the pixel electrode (5) and the data line are formed by another same patterning process.
摘要:
The present disclosure relates to a transflective LCD panel. A thin film transistor and a first insulating layer are formed on the side of a first transparent substrate facing a second transparent substrate, and the first insulating layer covers the thin film transistor; a transparent electrode layer and a reflective electrode layer are formed above the first insulating layer. A color filter layer is provided on the side of the second transparent substrate facing the first transparent substrate, and comprises a first color filter layer and a second color filter layer, the first color filter layer corresponds to the reflective electrode layer and the second color filter layer corresponds to the transparent electrode layer which is overlapped with the reflective electrode layer, and the color filtering ability of the first color filter layer is less than that of the second first color filter layer.