摘要:
Embodiments of the present invention disclose a thin film transistor array substrate and a method for manufacturing the same and an electronic device. The method for manufacturing the thin film transistor array substrate comprises: a first patterning process, in which a pattern of an active layer which is formed by a semiconductor layer and patterns of a source electrode and a drain electrode, which are separated from each other and are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of an insulating layer is formed on the transparent substrate subjected to the first patterning process, the pattern of the insulating layer comprising a contact via hole exposing the source electrode; and a third patterning process, in which a pattern of a pixel electrode, which is formed by a transparent conductive layer, and a pattern of a gate electrode, which is formed by a second metal layer, are formed on the transparent substrate subjected to the second patterning process, the pixel electrode being connected to the source electrode through the contact via hole.
摘要:
Embodiments of the present invention disclose a liquid crystal display panel and a method of driving the same. A subpixel unit includes a transmissive portion and a reflective portion, the transmissive portion comprises a transmissive portion thin film transistor and a transmissive pixel electrode connected to a drain of the transmissive portion thin film transistor, the reflective portion comprises a reflective layer, a reflective portion thin film transistor and a reflective pixel electrode connected to a drain of the reflective portion thin film transistor, a gate of the transmissive portion thin film transistor and a gate of the reflective portion thin film transistor each are connected to a gate line of the subpixel unit, and a source of the transmissive portion thin film transistor and a source of the reflective portion thin film transistor are connected to different data lines.
摘要:
An embodiment of the present invention provides a TFT array substrate including: a base substrate (1) and thin film transistors. The thin film transistor includes a gate electrode (2), a semiconductor layer (5), a semiconductor protective layer, a source electrode (8) and a drain electrode (9). The semiconductor protective layer is disposed adjacent to the semiconductor layer (5) and includes a composite lamination structure, which includes a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer (5) and an insulating layer formed of an insulating material to be etched more easily.
摘要:
Embodiments of the present invention disclose a thin film transistor array substrate and a method for manufacturing the same and an electronic device. The method for manufacturing the thin film transistor array substrate comprises: a first patterning process, in which a pattern of an active layer which is formed by a semiconductor layer and patterns of a source electrode and a drain electrode, which are separated from each other and are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of an insulating layer is formed on the transparent substrate subjected to the first patterning process, the pattern of the insulating layer comprising a contact via hole exposing the source electrode; and a third patterning process, in which a pattern of a pixel electrode, which is formed by a transparent conductive layer, and a pattern of a gate electrode, which is formed by a second metal layer, are formed on the transparent substrate subjected to the second patterning process, the pixel electrode being connected to the source electrode through the contact via hole.
摘要:
Embodiments of the present invention provide a TFT array substrate and a method for manufacturing the same and a display device. The TFT array substrate comprises: a base substrate; gate lines, gate electrodes, a gate insulating layer and a semiconductor active layer formed on the base substrate; a metal barrier layer formed on the semiconductor active layer, the metal barrier layer covering the semiconductor active layer; source electrodes and drain electrodes formed on the metal barrier layer, with a metal oxide part being formed between the source electrode and the drain electrode to insulate the source electrode and the drain electrode from each other; and a protection layer formed on the gate insulating layer and the source and drain electrodes, wherein the metal oxide part is formed by oxidizing a part of the metal barrier layer located between the source electrode and the drain electrode.
摘要:
An embodiment of the present invention provides a TFT array substrate comprising: a base substrate (1) and thin film transistors. The thin film transistor comprises a gate electrode (2), a semiconductor layer (5), a semiconductor protective layer, a source electrode (8) and a drain electrode (9). The semiconductor protective layer is disposed adjacent to the semiconductor layer (5) and comprises a composite lamination structure, which comprises a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer (5) and an insulating layer formed of an insulating material to be etched more easily.
摘要:
Embodiments of the present invention disclose a liquid crystal display panel and a method of driving the same. A subpixel unit includes a transmissive portion and a reflective portion, the transmissive portion comprises a transmissive portion thin film transistor and a transmissive pixel electrode connected to a drain of the transmissive portion thin film transistor, the reflective portion comprises a reflective layer, a reflective portion thin film transistor and a reflective pixel electrode connected to a drain of the reflective portion thin film transistor, a gate of the transmissive portion thin film transistor and a gate of the reflective portion thin film transistor each are connected to a gate line of the subpixel unit, and a source of the transmissive portion thin film transistor and a source of the reflective portion thin film transistor are connected to different data lines.
摘要:
There is disclosed an array substrate which has a base substrate and data lines and gate lines on the base substrate, The data lines and gate lines intersect with each other to define pixel units, and each pixel unit comprises a pixel electrode, a gate electrode, a source electrode, a drain electrode and an active layer, and the pixel electrode, the gate electrode and the gate line adjoin to the base substrate, and the gate electrode is formed of a same material as that for forming the pixel electrode.
摘要:
According to the present invention, there is provided an organic thin film transistor array substrate and a method for manufacturing the same and a display device. The method for manufacturing the organic thin film transistor array substrate comprises: forming a pattern comprising a source electrode, a drain electrode, a data line and a pixel electrode on a transparent substrate through a first patterning process; forming an organic semiconductor pattern, a gate insulating layer pattern, a pattern comprising a gate electrode and a gate line through a second patterning process on the transparent substrate after the first patterning process; depositing a passivation layer on the transparent substrate after the second patterning process, and forming a pattern comprising a data line pad region, a gate line pad region and a pixel pad region through a third patterning process; and forming a pattern of a common electrode on the transparent substrate after the third patterning process through a fourth patterning process. The technical solutions of the present invention can increase production efficiency of the organic thin film transistor array substrate and reduce production costs.
摘要:
An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.