公开(公告)号：US20070278183A1

公开(公告)日：2007-12-06

申请号：US11445718

申请日：2006-06-02

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US07134934B2

公开(公告)日：2006-11-14

申请号：US10230972

申请日：2002-08-29

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： B24B49/00

CPC分类号： C25F7/00 ,  B23H5/08 ,  C25F3/14

摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.

公开(公告)号：US06881127B2

公开(公告)日：2005-04-19

申请号：US09915657

申请日：2001-07-25

申请人： Gundu M. Sabde ,  Whonchee Lee

发明人： Gundu M. Sabde ,  Whonchee Lee

IPC分类号： B24B21/04 ,  B24B37/24 ,  B24B37/26 ,  C10M125/20 ,  C10M129/08 ,  C10M145/04 ,  C10M145/28 ,  C10M145/30 ,  C10M173/02 ,  C10N20/02 ,  C10N40/00 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/245 ,  B24B21/04 ,  B24B37/26 ,  B24D2203/00

摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

摘要翻译： 在具有非磨蚀性润滑平坦化溶液的固定研磨抛光垫上平面化微电子基板组件的方法和装置。 本发明的一个方面是将没有磨料颗粒的润滑平坦化溶液沉积在具有主体，主体上的平坦化表面的固定磨料抛光垫上，以及在平坦化表面处固定地附接到主体的多个磨料颗粒。 衬底组件的前表面被压在抛光垫的平坦化表面上的润滑平坦化溶液和固定磨料颗粒的至少一部分上。 然后抛光垫或基板组件中的至少一个相对于另一个移动以在其间进行相对运动。 当基板组件相对于抛光垫移动时，前表面的区域通过润滑平面化溶液中的润滑剂添加剂与抛光垫中的磨料颗粒分离。

公开(公告)号：US06783694B1

公开(公告)日：2004-08-31

申请号：US09560268

申请日：2000-04-26

申请人： Whonchee Lee ,  Yongjun Jeff Hu

发明人： Whonchee Lee ,  Yongjun Jeff Hu

IPC分类号： C09K1300

CPC分类号： C23F1/28 ,  H01L21/32134 ,  H01L21/76895

摘要： An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second portions of the metal nitride layer. The regions of cobalt and the second portions of the metal nitride layer are removed with at least one solution including a mineral acid and a peroxide. The mineral acid may be selected from the group including HCl, H2SO4, H3PO4, HNO3, and dilute HF (preferably the mineral acid is HCl) and the peroxide may be hydrogen peroxide. Further, the removal of the regions of cobalt and the second portions of the metal nitride layer may include a one step process or a two step process. In the one step process, the regions of cobalt and the second portions of the metal nitride layer are removed with a single solution including the mineral acid and the peroxide. In the two step process, the regions of cobalt are removed with a first solution containing a mineral acid and a peroxide and the second portions of the metal nitride layer are removed with a second solution containing a peroxide. An etching composition including a mineral acid and a peroxide, preferably, HCl and hydrogen peroxide, is also described. The etching methods and compositions may be used in forming structures such as word lines, gate electrodes, local interconnects, etc.

摘要翻译： 用于集成电路制造的蚀刻方法包括在衬底组件上提供金属氮化物层，在金属氮化物层的第一部分上提供钴硅化物的区域，以及在金属氮化物层的第二部分上提供钴区域。 用至少一种包含无机酸和过氧化物的溶液除去钴的区域和金属氮化物层的第二部分。 无机酸可以选自HCl，H 2 SO 4，H 3 PO 4，HNO 3和稀HF（优选无机酸是HCl），并且过氧化物可以是过氧化氢。 此外，除去钴的区域和金属氮化物层的第二部分可以包括一步法或两步法。 在一步法中，用包含无机酸和过氧化物的单一溶液除去钴的区域和金属氮化物层的第二部分。 在两步法中，用含有无机酸和过氧化物的第一溶液除去钴的区域，并用含有过氧化物的第二溶液除去金属氮化物层的第二部分。 还描述了包含无机酸和过氧化物，优选HCl和过氧化氢的蚀刻组合物。 蚀刻方法和组合物可以用于形成诸如字线，栅电极，局部互连等的结构。

公开(公告)号：US06087273A

公开(公告)日：2000-07-11

申请号：US236825

申请日：1999-01-25

申请人： Kevin J. Torek ,  Whonchee Lee

发明人： Kevin J. Torek ,  Whonchee Lee

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31111

摘要： An improved wet etchant process is provided which has greater selectivity than existing hot phosphoric acid etching processes and which maintains a high etch rate in use. The etchant composition includes a second acid having a boiling point higher than that of the phosphoric acid.

摘要翻译： 提供了一种改进的湿蚀刻工艺，其具有比现有的热磷酸蚀刻工艺更大的选择性，并且在使用中保持高的蚀刻速率。 蚀刻剂组合物包括沸点高于磷酸的第二种酸。

公开(公告)号：US5885903A

公开(公告)日：1999-03-23

申请号：US787205

申请日：1997-01-22

申请人： Kevin J. Torek ,  Whonchee Lee

发明人： Kevin J. Torek ,  Whonchee Lee

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31111

摘要： An improved wet etchant process is provided which has greater selectivity than existing hot phosphoric acid etching processes and which maintains a high etch rate in use. The etchant composition includes a second acid having a boiling point higher than that of the phosphoric acid.

公开(公告)号：US5770263A

公开(公告)日：1998-06-23

申请号：US555488

申请日：1995-11-08

申请人： Richard C. Hawthorne ,  Whonchee Lee

发明人： Richard C. Hawthorne ,  Whonchee Lee

IPC分类号： C23C16/02 ,  H01L21/306 ,  B05D3/00

CPC分类号： H01L21/02049 ,  C23C16/02 ,  C23C16/0209 ,  C23C16/0236

摘要： Disclosed is a process for cleaning silicon surfaces of native oxide films. The process utilizes fluorine containing cleaning materials such as anhydrous hydrofluoric acid to clean the oxide from the surface. A fluorine containing particulate matter which forms on the surface as a result of the fluorine containing cleaning materials is then removed by heating the surface to a high temperature. The process is conducted in a non-oxidizing ambient and is preferably conducted in a cluster tool so that the heating step can take place in the same chamber of the cluster tool as later metal deposition step.

摘要翻译： 公开了一种清洁自然氧化膜的硅表面的方法。 该方法利用含氟清洗材料如无水氢氟酸从表面清洗氧化物。 作为含氟清洗材料的结果，在表面上形成的含氟颗粒物质然后通过将表面加热到高温来除去。 该方法在非氧化环境中进行，并且优选在簇工具中进行，使得加热步骤可以在随后的金属沉积步骤中在簇工具的相同室中进行。

公开(公告)号：US08294246B2

公开(公告)日：2012-10-23

申请号：US13176416

申请日：2011-07-05

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： H01L29/06

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US20120168898A1

公开(公告)日：2012-07-05

申请号：US13416834

申请日：2012-03-09

申请人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

发明人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L21/306

CPC分类号： H01L21/30608 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/76232 ,  H01L29/66818

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将单晶硅衬底暴露于底切单晶硅的各向异性蚀刻剂。 通过控制蚀刻的长度，可以产生单晶硅中的单晶硅岛或平滑的垂直壁。

公开(公告)号：US08048287B2

公开(公告)日：2011-11-01

申请号：US12580941

申请日：2009-10-16

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： C25F3/16

CPC分类号： B24B37/12 ,  B23H3/00 ,  B23H3/02 ,  B23H5/08 ,  B24B37/046 ,  B24B37/30 ,  C25F3/14 ,  C25F7/00

摘要： Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

摘要翻译： 用于从微电子衬底选择性去除导电材料的方法和装置。 根据本发明的实施例的方法包括将微电子基板定位在靠近并与电极对间隔开的位置，电极对包括第一电极和与第一电极间隔开的第二电极。 电解液可以通过第一流动通道引导到微电子衬底和电极对之间的界面区域。 可以将变化的电信号通过电极对和电解液体以从微电子衬底去除导电材料。 可以通过靠近第一流动通道和电极对的第二流动通道去除电解液体。