公开(公告)号：US20100254174A1

公开(公告)日：2010-10-07

申请号：US12416976

申请日：2009-04-02

申请人： Yuankai Zheng ,  Xiaohua Lou ,  Zheng Gao ,  Wei Tian ,  Dimitar V. Dimitrov ,  Dexin Wang

发明人： Yuankai Zheng ,  Xiaohua Lou ,  Zheng Gao ,  Wei Tian ,  Dimitar V. Dimitrov ,  Dexin Wang

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1673

摘要： A resistive sense memory and method of writing data thereto. In accordance with various embodiments, the resistive sense memory comprises a first reference layer with a fixed magnetic orientation in a selected direction coupled to a first tunneling barrier, a second reference layer with a fixed magnetic orientation in the selected direction coupled to a second tunneling barrier, and a recording structure disposed between the first and second tunneling barriers comprising first and second free layers. A selected logic state is written to the resistive sense memory by applying a programming input to impart complementary first and second programmed magnetic orientations to the respective first and second free layers.

摘要翻译： 一种电阻读出存储器及其数据写入方法。 根据各种实施例，电阻式感测存储器包括在耦合到第一隧道势垒的选定方向上具有固定磁性取向的第一参考层，在所选择的方向上具有固定的磁性取向的第二参考层，其耦合到第二隧道势垒 以及设置在第一和第二隧穿屏障之间的记录结构，包括第一和第二自由层。 所选择的逻辑状态通过施加编程输入来写入电阻式读出存储器，以将互补的第一和第二编程磁性取向传递给相应的第一和第二自由层。

公开(公告)号：US08405171B2

公开(公告)日：2013-03-26

申请号：US12947516

申请日：2010-11-16

申请人： Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

发明人： Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

IPC分类号： H01L29/82

CPC分类号： H01L43/02 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

摘要翻译： 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。

公开(公告)号：US20120119313A1

公开(公告)日：2012-05-17

申请号：US12947516

申请日：2010-11-16

申请人： Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

发明人： Yuankai Zheng ,  Xiaohua Lou ,  Wei Tian ,  Zheng Gao ,  Haiwen Xi

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/02 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

摘要翻译： 一种具有声阻隔绝缘层的非易失性存储单元的装置和相关方法。 根据各种实施例，磁性堆叠具有隧道结，铁磁自由层，被钉扎层和由电绝缘材料和热绝缘材料构成的绝缘层，其阻挡声子同时允许通过至少一个导电特征的电传输。

公开(公告)号：US20100102369A1

公开(公告)日：2010-04-29

申请号：US12420131

申请日：2009-04-08

申请人： Wei Tian ,  Haiwen Xi ,  Yuankai Zheng ,  Venugopalan Vaithyanathan ,  Insik Jin

发明人： Wei Tian ,  Haiwen Xi ,  Yuankai Zheng ,  Venugopalan Vaithyanathan ,  Insik Jin

IPC分类号： H01L29/82 ,  H01L29/68

CPC分类号： H01L27/11507 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/2275

摘要： A ferroelectric memory cell that has a magnetoelectric element between a first electrode and a second electrode, the magnetoelectric element comprising a ferromagnetic material layer and a multiferroic material layer with an interface therebetween. The magnetization orientation of the ferromagnetic material layer and the multiferroic material layer may be in-plane or out-of-plane. FeRAM memory devices are also provided.

摘要翻译： 一种在第一电极和第二电极之间具有磁电元件的铁电存储器单元，所述磁电元件包括​​铁磁材料层和在其间具有界面的多铁性材料层。 铁磁材料层和多铁性材料层的磁化取向可以是平面内或平面外的。 还提供了FeRAM存储器件。

公开(公告)号：US07875923B2

公开(公告)日：2011-01-25

申请号：US12120715

申请日：2008-05-15

申请人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/788

CPC分类号： H01L29/792

摘要： A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.

摘要翻译： 具有电荷源区域，电荷存储区域和具有在电荷源区域和电荷存储区域之间峰值的势能分布的波峰隧道势垒层的非易失性存储单元。 隧道势垒层具有多个高K电介质材料，无论是单独层还是成分分级材料。

公开(公告)号：US20100117051A1

公开(公告)日：2010-05-13

申请号：US12269507

申请日：2008-11-12

申请人： Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

IPC分类号： H01L47/00 ,  H01L21/44

CPC分类号： H01L27/2472 ,  H01L21/76816 ,  H01L23/5226 ,  H01L27/228 ,  H01L27/2436 ,  H01L43/08 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.

摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上填充有导电金属，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。

公开(公告)号：US20090283816A1

公开(公告)日：2009-11-19

申请号：US12120715

申请日：2008-05-15

申请人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/788

CPC分类号： H01L29/792

摘要： A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.

摘要翻译： 具有电荷源区域，电荷存储区域和具有在电荷源区域和电荷存储区域之间峰值的势能分布的波峰隧道势垒层的非易失性存储单元。 隧道势垒层具有多个高K电介质材料，无论是单独层还是成分分级材料。

公开(公告)号：US20120142169A1

公开(公告)日：2012-06-07

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US07750386B2

公开(公告)日：2010-07-06

申请号：US12269507

申请日：2008-11-12

申请人： Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

IPC分类号： H01L29/76 ,  H01L21/8242

CPC分类号： H01L27/2472 ,  H01L21/76816 ,  H01L23/5226 ,  H01L27/228 ,  H01L27/2436 ,  H01L43/08 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.

摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上被导电金属填充，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。

公开(公告)号：US20120138884A1

公开(公告)日：2012-06-07

申请号：US13396731

申请日：2012-02-15

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L45/00

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.