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公开(公告)号：US20100117051A1
公开(公告)日：2010-05-13
申请号：US12269507
申请日：2008-11-12
申请人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
CPC分类号： H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上填充有导电金属，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。
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2.发明授权公开(公告)号：US07750386B2
公开(公告)日：2010-07-06
申请号：US12269507
申请日：2008-11-12
申请人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
IPC分类号： H01L29/76 , H01L21/8242
CPC分类号： H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上被导电金属填充，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。
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公开(公告)号：US20100102308A1
公开(公告)日：2010-04-29
申请号：US12390711
申请日：2009-02-23
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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公开(公告)号：US20120032131A1
公开(公告)日：2012-02-09
申请号：US13278245
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
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公开(公告)号：US08343801B2
公开(公告)日：2013-01-01
申请号：US13278240
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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公开(公告)号：US20120040496A1
公开(公告)日：2012-02-16
申请号：US13278240
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L21/8239
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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公开(公告)号：US08058646B2
公开(公告)日：2011-11-15
申请号：US12390711
申请日：2009-02-23
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L29/12
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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公开(公告)号：US08288753B2
公开(公告)日：2012-10-16
申请号：US13278245
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L47/02
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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9.发明申请公开(公告)号：US20100140578A1
公开(公告)日：2010-06-10
申请号：US12425071
申请日：2009-04-16
申请人： Wei Tian , Ming Sun , Michael Xuefei Tang , Dimitar V. Dimitrov
发明人： Wei Tian , Ming Sun , Michael Xuefei Tang , Dimitar V. Dimitrov
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2463 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： Programmable metallization cells (PMC) that include a first electrode; a solid electrolyte layer including clusters of high ion conductive material dispersed in a low ion conductive material; and a second electrode, wherein either the first electrode or the second electrode is an active electrode, and wherein the solid electrolyte layer is disposed between the first electrode and the second electrode. Methods of forming them are also included herein.
摘要翻译： 包括第一电极的可编程金属化电池（PMC） 包括分散在低离子导电材料中的高离子导电材料簇的固体电解质层; 以及第二电极，其中所述第一电极或所述第二电极是有源电极，并且其中所述固体电解质层设置在所述第一电极和所述第二电极之间。 也包括形成它们的方法。
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公开(公告)号：US20100108975A1
公开(公告)日：2010-05-06
申请号：US12265551
申请日：2008-11-05
申请人： Ming Sun , Wei Tian , Insik Jin , Michael Xuefei Tang , Andrew James Wirebaugh
发明人： Ming Sun , Wei Tian , Insik Jin , Michael Xuefei Tang , Andrew James Wirebaugh
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , G11C13/0011 , G11C2213/51 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/142 , H01L45/144 , H01L45/1658
摘要： A method and apparatus for forming a non-volatile memory cell, such as a PMC memory cell. In some embodiments, a first electrode is connected to a source while a second electrode is connected to a ground. An ionic region is located between the first and second electrodes and comprises a doping layer, composite layer, and electrolyte layer. The composite layer has a low resistive state and the electrolyte layer switches from a high resistive state to a low resistive state based on the presence of a filament.
摘要翻译： 一种用于形成诸如PMC存储单元的非易失性存储单元的方法和装置。 在一些实施例中，第一电极连接到源，而第二电极连接到地。 离子区位于第一和第二电极之间，并且包括掺杂层，复合层和电解质层。 复合层具有低电阻状态，并且基于长丝的存在，电解质层从高电阻状态切换到低电阻状态。
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