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158 条记录 (耗时 0.028 秒)

    Cyclohexylphenylpyridazines
    23.
    发明授权
    Cyclohexylphenylpyridazines 失效
    环己基苯基哒嗪

    公开(公告)号：US4818429A

    公开(公告)日：1989-04-04

    申请号：US95111

    申请日：1987-09-11

    申请人： Shinichi Saito ,  Takashi Inukai ,  Hiromichi Inoue ,  Kazutoshi Miyazawa ,  Kouji Ohno

    发明人： Shinichi Saito ,  Takashi Inukai ,  Hiromichi Inoue ,  Kazutoshi Miyazawa ,  Kouji Ohno

    IPC分类号： C07D237/08 ,  C07D237/14 ,  C09K19/34 ,  C09K19/42 ,  C07D237/00 ,  C07D237/02 ,  C09K19/52

    CPC分类号： C07D237/14 ,  C09K19/3455

    摘要： A compound useful as a component constituting ferroelectric liquid crystal display elements and a liquid crystal composition containing the same are provided, which compound is expressed by the formula ##STR1## wherein R represents a linear or branched chain alkyl group of 1 to 20 carbon atoms and R* represents an optically active alkyl group, alkoxy group, alkoxyalkyl group, alkoxyalkoxy group, alkanoyloxyalkyl group, alkanoyloxyalkoxy group, halogenated alkyl group or halogenated alkoxy group each of 2 to 20 carbon atoms.

    摘要翻译： 提供了可用作构成铁电液晶显示元件的组分的化合物和含有该化合物的液晶组合物，该化合物由式（I）表示，其中R表示1至20的直链或支链烷基 碳原子，R *表示2〜20个碳原子的光学活性烷基，烷氧基，烷氧基烷基，烷氧基烷氧基，烷酰氧基烷基，烷酰氧基烷氧基，卤代烷基或卤代烷氧基。

    Process for the production of ethylene-propylene block copolymers
    25.
    发明授权
    Process for the production of ethylene-propylene block copolymers 失效
    用于生产乙烯 - 丙烯嵌段共聚物的方法

    公开(公告)号：US4066718A

    公开(公告)日：1978-01-03

    申请号：US730742

    申请日：1976-10-08

    申请人： Shinichi Saito ,  Asaya Okaue ,  Kazuo Baba ,  Shigeo Tanaka

    发明人： Shinichi Saito ,  Asaya Okaue ,  Kazuo Baba ,  Shigeo Tanaka

    IPC分类号： C08F297/00 ,  C08F297/08

    CPC分类号： C08F297/083

    摘要： A method for the continuous production of crystalline ethylene-propylene block copolymers containing propylene as the major component and having excellent physical properties as that by a batch process in a slurry-phase by homopolymerizing propylene and then copolymerizing ethylene and propylene in the presence of an inert hydrocarbon solvent and a stereoregular polymerization catalyst in polymerization vessels connected in series, which is characterized by homopolymerizing propylene in three polymerization vessels, wherein the inner pressure of the vessels is decreased in order so as to make the inner-pressure difference between each consecutive two vessels from 1 to 3 kg/cm.sup.2, and then copolymerizing ethylene and propylene in at least two polymerization vessels, the resulting slurry being transferred from one vessel to the next vessel by the inner-pressure difference between the vessels without using a transferring pump in the homopolymerization step and being pressure-transferred to at least one vessel by using a transferring pump for raising the pressure in the copolymerization step.

    Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
    26.
    发明授权
    Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method 有权
    硅发光二极管，硅光晶体管，硅激光器及其制造方法

    公开(公告)号：US08436333B2

    公开(公告)日：2013-05-07

    申请号：US11790283

    申请日：2007-04-24

    申请人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

    发明人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

    IPC分类号： H01L29/06

    CPC分类号： H01L33/34 ,  H01S5/3224

    摘要： A light-emitting device according to the present invention includes a first electrode unit for injecting an electron, a second electrode unit for injecting a hole, and light-emitting units and electrically connected to the first electrode unit and the second electrode unit respectively, wherein the light-emitting units and are formed of single-crystal silicon, the light-emitting units and having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units and in a direction orthogonal to the first and second surfaces being made extremely thin.

    摘要翻译： 根据本发明的发光器件包括用于注入电子的第一电极单元，用于注入孔的第二电极单元和发光单元，并分别与第一电极单元和第二电极单元电连接，其中 所述发光单元由单晶硅形成，所述发光单元具有与所述第一表面相对的第一表面（顶侧表面）和第二表面（下表面），所述第一表面和所述第二表面 设置为（100）面时，发光单元的厚度和与第一表面和第二表面正交的方向的厚度非常薄。

    LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME
    28.
    发明申请
    LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置，光接收装置及其制造方法

    公开(公告)号：US20110227116A1

    公开(公告)日：2011-09-22

    申请号：US13129115

    申请日：2009-10-21

    申请人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

    发明人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

    IPC分类号： H01L33/34 ,  H01L33/60 ,  H01L31/028 ,  H01L31/18

    CPC分类号： H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

    摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

    摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

    Method of manufacturing a field effect transistor having an oxide semiconductor
    29.
    发明授权
    Method of manufacturing a field effect transistor having an oxide semiconductor 有权
    制造具有氧化物半导体的场效应晶体管的方法

    公开(公告)号：US07968368B2

    公开(公告)日：2011-06-28

    申请号：US12695361

    申请日：2010-01-28

    申请人： Hironori Wakana ,  Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Shinichi Saito

    发明人： Hironori Wakana ,  Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Shinichi Saito

    IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/84

    CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/7869

    摘要： A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a substrate and used as a photomask for forming a gate electrode pattern and a source and drain electrode pattern on the front side of the substrate, the number of photomasks is reduced, and self-alignment between the gate electrode and the source and drain electrodes is carried out, thereby improving the alignment accuracy of these electrodes. Thereby, a method of manufacturing a high-accuracy low-cost field effect transistor can be provided.

    摘要翻译： 一种制造场效应晶体管的方法，其在栅极和源极和漏极之间具有高对准精度，并且可以以低成本提供透明器件。 由于在基板的背面形成图案遮光膜，作为形成栅极电极图案的光掩模和基板前侧的源极和漏极电极图案，因此光掩模的数量减少， 进行栅电极与源漏电极之间的对准，从而提高这些电极的对准精度。 由此，可以提供制造高精度低成本场效应晶体管的方法。

    Personal information management system, personal information management program, and personal information protecting method
    30.
    发明授权
    Personal information management system, personal information management program, and personal information protecting method 失效
    个人信息管理系统，个人信息管理程序和个人信息保护方法

    公开(公告)号：US07930560B2

    公开(公告)日：2011-04-19

    申请号：US11826669

    申请日：2007-07-17

    申请人： Shinichi Saito ,  Hisao Kato

    发明人： Shinichi Saito ,  Hisao Kato

    IPC分类号： G06F11/30 ,  G06F17/30

    CPC分类号： G06F17/30595 ,  G06F21/6272 ,  H04L9/085 ,  H04L9/0894

    摘要： The present invention provides a personal information management system, a personal information management program and a personal information protecting method capable of storing personal information in consideration of security protection and facilitating utilization of the stored information. A personal information management system for handling personal information has a function of connection to a personal information dispersion management server that provides functions of encrypting personal information by the secret sharing scheme and decrypting the encrypted personal information with an index key for decrypting. The system has a search keyword management database storing the index key for decrypting and a personal information managing apparatus. When a request for storing personal information requiring security protection is generated, the personal information is divided and stored in the personal information dispersion management server, and the personal information is stored so as to be associated with the index key for decrypting into the search keyword management database.

    摘要翻译： 本发明提供了一种个人信息管理系统，个人信息管理程序和个人信息保护方法，其能够考虑到安全保护和便于利用所存储的信息来存储个人信息。 用于处理个人信息的个人信息管理系统具有连接到个人信息分散管理服务器的功能，该个人信息分散管理服务器提供通过秘密共享方案加密个人信息的功能，并用索引密钥解密加密的个人信息以进行解密。 该系统具有存储解密索引关键字的搜索关键字管理数据库和个人信息管理装置。 当生成存储需要安全保护的个人信息的请求时，个人信息被分割并存储在个人信息分散管理服务器中，并且个人信息被存储以便与用于解密的索引关键字相关联到搜索关键字管理 数据库。