Control circuit for a solid state imaging device which allows a high
speed object to be detected
    21.
    发明授权
    Control circuit for a solid state imaging device which allows a high speed object to be detected 失效
    用于固态成像装置的控制电路,其允许检测高速物体

    公开(公告)号:US5422670A

    公开(公告)日:1995-06-06

    申请号:US113921

    申请日:1993-08-31

    申请人: Hiroshi Fukui

    发明人: Hiroshi Fukui

    IPC分类号: H04N5/353 H04N5/372 H04N5/335

    CPC分类号: H04N5/232 H04N5/353

    摘要: A solid-state imaging device for imaging an object moving at a high speed using a solid-state image sensor having an electronic shutter function. A modulated horizontal synchronizing signal, modulated so as to have a frequency higher than the frequency of the normal horizontal synchronizing signal depending on the designated shutter speed, is supplied from a modulated synchronizing signal generator to a timing generator. The timing generator counts a predetermined number of the modulated horizontal synchronizing signal pulses since the timing of a vertical synchronizing signal to output a readout pulse at a more prompt timing than when the normal horizontal synchronizing signal pulses are counted. The readout pulse controls the function of the electronic shutter of the solid-state imaging device. This enables the CCD image sensor to perform imaging by a high-speed shutter operation.

    摘要翻译: 一种用于使用具有电子快门功能的固态图像传感器高速移动的物体成像的固态成像装置。 经调制的水平同步信号被调制成具有高于正常水平同步信号的频率的频率,这取决于指定的快门速度,从调制同步信号发生器提供给定时发生器。 定时发生器从垂直同步信号的定时计数预定数量的调制水平同步信号脉冲,以便在比正常的水平同步信号脉冲被计数时更加及时地输出读出脉冲。 读出脉冲控制固态成像装置的电子快门的功能。 这使得CCD图像传感器能够通过高速快门操作来执行成像。

    Packing material for liquid chromatography
    25.
    发明授权
    Packing material for liquid chromatography 失效
    液相色谱填充材料

    公开(公告)号:US4743377A

    公开(公告)日:1988-05-10

    申请号:US880757

    申请日:1986-06-30

    IPC分类号: B01J20/32 B01D15/08

    摘要: A packing material for liquid chromatography, comprising particles having a silicone polymer film coated on substantially the entire surface thereof, the packing material being produced by a process comprising the steps of:(a) bringing at least one silicone compound having the general formula (I):(R.sup.1 HSiO).sub.a (R.sup.2 R.sup.3 SiO).sub.b (R.sup.4 R.sup.5 R.sup.6 SiO.sub.1/2).sub.c (I) wherein R.sup.1, R.sup.2, and R.sup.3 represent, independently, a hydrocarbon residue having 1 to 10 carbon atoms, which may be substituted with at least one halogen atom, R.sup.4, R.sup.5, and R.sup.6 represent, independently, hydrogen or a hydrocarbon residue having 1 to 10 carbon atoms, which may be substituted with at least one halogen atom, a is zero or an integer of 1 or more, b is zero or an integer of 1 or more, c is zero or 2, and a+b+c is 3 to 300, into contact with particles, whereby the silicone compound is polymerized on substantially the entire surface of the particles, and(b) crosslinking unreacted Si--H groups in the presence of a catalyst, or(c) carrying out an addition reaction of a vinyl compound having up to 40 carbon atoms to unreacted Si--H groups.

    摘要翻译: 一种用于液相色谱的包装材料,包括在其基本上整个表面上涂覆有硅氧烷聚合物膜的颗粒,所述包装材料通过包括以下步骤的方法生产:(a)将至少一种具有通式(I ):(R1HSiO)a(R2R3SiO)b(R4R5R6SiO1 / 2)c(I)其中R1,R2和R3独立地表示可以被至少一个卤素原子取代的具有1至10个碳原子的烃残基 ,R 4,R 5和R 6独立地表示氢或具有1〜10个碳原子的烃残基,其可被至少一个卤素原子取代,a为0或1以上的整数,b为0或a 1以上的整数,c为0或2,a + b + c为3〜300,与颗粒接触,由此使硅酮化合物在颗粒的基本整个表面上聚合,(b)将未反应的Si -H基团在催化剂存在下,或(c)进行添加 具有至多40个碳原子的乙烯基化合物与未反应的Si-H基团的反应。

    Semiconductor switching device having plural MOSFET's, GTO's or the like
connected in series
    26.
    发明授权
    Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series 失效
    具有串联连接的多个MOSFET,GTO等的半导体开关元件

    公开(公告)号:US4692643A

    公开(公告)日:1987-09-08

    申请号:US665132

    申请日:1984-10-26

    CPC分类号: H03K17/102

    摘要: A semiconductor switching device includes a row of a plurality of switching elements connected in series. The input terminal of the input-nearest switching element and the output terminal of the output-nearest switching element are connected with the input terminal and output terminal of the semiconductor switching device, respectively. A control signal is applied to the control terminal of the output-nearest switching element. The semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row; and a second capacitive element connected between the output terminal and input terminal of the input-nearest switching element. At least the switching elements (S.sub.2 -S.sub.n) have insulating gates, respectively.

    摘要翻译: 半导体开关器件包括串联连接的多个开关元件的一行。 输入最近开关元件的输入端和输出最近开关元件的输出端分别与半导体开关器件的输入端和输出端相连。 控制信号被施加到输出最近的开关元件的控制端子。 半导体开关器件包括第一多个电容元件,每个电容元件连接在开关元件列之间的输出接近开关元件的输出端子和相邻开关元件的输入接近开关元件的控制端子之间; 以及连接在输入 - 最近开关元件的输出端子和输入端子之间的第二电容元件。 至少开关元件(S2-Sn)分别具有绝缘栅极。

    Thyristor with switchable capacitor between auxiliary thyristor cathode
and main thyristor gate regions
    27.
    发明授权
    Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions 失效
    辅助晶闸管阴极和主晶闸管栅极区域之间具有可切换电容器的晶闸管

    公开(公告)号:US4315274A

    公开(公告)日:1982-02-09

    申请号:US160567

    申请日:1980-06-17

    IPC分类号: H01L29/74

    CPC分类号: H01L29/7408 H01L29/7428

    摘要: A thyristor comprising a main thyristor and an auxiliary thrysitor, wherein a capacitor is connected between the cathode electrode of the auxiliary thyristor and the gate electrode of the main thyristor so that electrical or thermal injury or breakdown in the auxiliary thyristor and in the vicinity thereof can be prevented and that the di/dt capability of the thyristor can be increased.

    摘要翻译: 一种包括主晶闸管和辅助晶体管的晶闸管,其中电容器连接在辅助晶闸管的阴极和主晶闸管的栅极之间,使得辅助晶闸管及其附近的电或热损伤或击穿可以 并且可以提高晶闸管的di / dt能力。

    Amplified gate semiconductor controlled rectifier with reduced lifetime
in auxiliary thyristor portion
    28.
    发明授权
    Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion 失效
    放大门半导体可控整流器,辅助晶闸管部分寿命缩短

    公开(公告)号:US4214254A

    公开(公告)日:1980-07-22

    申请号:US882332

    申请日:1978-03-01

    IPC分类号: H01L29/74

    CPC分类号: H01L29/7428

    摘要: A semiconductor controlled rectifier comprising an auxiliary thyristor region turned on by a gating signal and a main thyristor region turned on by being gated by the turn-on current flowing through the auxiliary thyristor region, wherein the life time of carriers in the auxiliary thyristor region is made shorter than that of the carriers in the main thyristor region.

    摘要翻译: 一种半导体可控整流器,包括通过门控信号导通的辅助晶闸管区域和通过流经辅助晶闸管区域的导通电流而导通的主晶闸管区域,其中辅助晶闸管区域中的载流子的寿命为 比主晶闸管区域的载流子短。

    Thin film magnetic head for high density recording and having a leading side magnetic pole piece of variable width at the media facing surface
    30.
    发明授权
    Thin film magnetic head for high density recording and having a leading side magnetic pole piece of variable width at the media facing surface 有权
    用于高密度记录的薄膜磁头并且在介质面向表面具有可变宽度的前端磁极片

    公开(公告)号:US07821737B2

    公开(公告)日:2010-10-26

    申请号:US11486802

    申请日:2006-07-14

    IPC分类号: G11B5/187

    摘要: Embodiments of the invention provide a thin film magnetic head suitable for high density recording having a small erase band ΔE and a small fringe magnetic field, and a large recording magnetic field. In one embodiment, a width LW of a lower magnetic pole piece protuberance of a leading side magnetic pole piece, at a face in contact with a write gap layer, is made smaller than a width TW of an upper magnetic pole piece front layer of a trailing side magnetic pole piece, at a face in contact with the write gap layer, and the width of the lower magnetic pole piece protuberance adjacent to the write gap layer is made larger, in a direction from the write gap layer.

    摘要翻译: 本发明的实施例提供一种适用于高密度记录的薄膜磁头,其具有小的擦除带&Dgr; E和小的边缘磁场以及大的记录磁场。 在一个实施例中,使前侧磁极片的下磁极片突起在与写间隙层接触的面处的宽度LW小于上述磁极片前层的宽度TW 在与写入间隙层接触的面处的后侧磁极片和与写入间隙层相邻的下部磁极片突起的宽度在从写入间隙层的方向上变大。