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    INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K METAL GATE STACK
    21.
    发明申请
    INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K METAL GATE STACK 有权
    用于高K金属门盖的通道移动性改进的界面结构

    公开(公告)号：US20110298060A1

    公开(公告)日：2011-12-08

    申请号：US12792242

    申请日：2010-06-02

    申请人： Tze-Chiang Chen ,  Dechao Guo ,  Philip J. Oldiges ,  Yanfeng Wang

    发明人： Tze-Chiang Chen ,  Dechao Guo ,  Philip J. Oldiges ,  Yanfeng Wang

    IPC分类号： H01L29/423 ,  H01L21/28

    CPC分类号： H01L29/517 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/513 ,  H01L29/518

    摘要： A gate stack structure for field effect transistor (FET) devices includes a nitrogen rich first dielectric layer formed over a semiconductor substrate surface; a nitrogen deficient, oxygen rich second dielectric layer formed on the nitrogen rich first dielectric layer, the first and second dielectric layers forming, in combination, a bi-layer interfacial layer; a high-k dielectric layer formed over the bi-layer interfacial layer; a metal gate conductor layer formed over the high-k dielectric layer; and a work function adjusting dopant species diffused within the high-k dielectric layer and within the nitrogen deficient, oxygen rich second dielectric layer, and wherein the nitrogen rich first dielectric layer serves to separate the work function adjusting dopant species from the semiconductor substrate surface.

    摘要翻译： 用于场效应晶体管（FET）器件的栅极堆叠结构包括形成在半导体衬底表面上的富氮第一介电层; 形成在富氮第一介电层上的缺氮富氧的第二电介质层，第一和第二电介质层组合形成双层界面层; 形成在双层界面层上的高k电介质层; 形成在高k电介质层上的金属栅极导体层; 以及调节掺杂物质的功函数，其在所述高k电介质层内和所述缺氮富氧的第二电介质层内扩散，并且其中所述富氮第一介电层用于将所述功函数调节掺杂剂物质与所述半导体衬底表面分离。

    On-chip poly-to-contact process monitoring and reliability evaluation system and method of use
    23.
    发明授权
    On-chip poly-to-contact process monitoring and reliability evaluation system and method of use 有权
    片上多点接触过程监控与可靠性评估系统及使用方法

    公开(公告)号：US09029172B2

    公开(公告)日：2015-05-12

    申请号：US13354547

    申请日：2012-01-20

    申请人： Fen Chen ,  Roger A. Dufresne ,  Timothy D. Sullivan ,  Yanfeng Wang

    发明人： Fen Chen ,  Roger A. Dufresne ,  Timothy D. Sullivan ,  Yanfeng Wang

    IPC分类号： H01L21/00 ,  H01L21/66

    CPC分类号： H01L22/34 ,  H01L22/12 ,  H01L2924/00 ,  H01L2924/0002

    摘要： An on-chip poly-to-contact process monitoring and reliability evaluation system and method of use are provided. A method includes determining a breakdown electrical field of each of one or more shallow trench isolation (STI) measurement structures corresponding to respective one or more original semiconductor structures. The method further includes determining a breakdown voltage of each of one or more substrate measurement structures corresponding to the respective one or more original semiconductor structures. The method further includes determining a space between a gate and a contact of each of the one or more original semiconductor structures based on the determined breakdown electrical field and the determined breakdown voltage.

    摘要翻译： 提供片上多点接触式过程监测和可靠性评估系统及其使用方法。 一种方法包括确定与相应的一个或多个原始半导体结构相对应的一个或多个浅沟槽隔离（STI）测量结构中的每一个的击穿电场。 该方法还包括确定与相应的一个或多个原始半导体结构相对应的一个或多个衬底测量结构中的每一个的击穿电压。 该方法还包括基于所确定的击穿电场和所确定的击穿电压，确定一个或多个原始半导体结构中的每一个的栅极和触点之间的空间。

    Modulator, mixer and method for amplitude shift keying modulation
    24.
    发明授权
    Modulator, mixer and method for amplitude shift keying modulation 有权
    调制器，混频器和振幅键控调制方法

    公开(公告)号：US08797112B2

    公开(公告)日：2014-08-05

    申请号：US13400129

    申请日：2012-02-20

    申请人： Peng Han ,  Dawei Guo Guo ,  Jiazhou Liu ,  Yanfeng Wang

    发明人： Peng Han ,  Dawei Guo Guo ,  Jiazhou Liu ,  Yanfeng Wang

    IPC分类号： H03C1/00

    CPC分类号： H03C1/36 ,  H03D7/1441 ,  H03D7/1458 ,  H03D7/1491 ,  H03D2200/0033 ,  H03D2200/0052 ,  H04L27/04

    摘要： An ASK modulator includes a baseband unit which obtains a sequence comprising at least one amplitude value and adds an additional value to each of the at least one amplitude value to generate a modified sequence; a digital-to-analog converter coupled to the baseband unit, the digital-to-analog converter converts the modified sequence to generate a first signal, the additional value is determined based on a half scale of the digital-analog converter; and a mixer which receives the first signal and a second signal and generate a modulated signal by mixing the first signal with the second signal.

    摘要翻译： ASK调制器包括：基带单元，其获得包括至少一个幅度值的序列，并且对所述至少一个幅度值中的每一个增加附加值以生成修改的序列; 耦合到所述基带单元的数模转换器，所述数模转换器转换所述经修改的序列以产生第一信号，所述附加值基于所述数模转换器的半标度来确定; 以及混合器，其接收第一信号和第二信号，并通过将第一信号与第二信号混合来产生调制信号。

    Method of optimizing the treatment of Philadelphia-positive leukemia with imatinib mesylate
    25.
    发明授权
    Method of optimizing the treatment of Philadelphia-positive leukemia with imatinib mesylate 失效
    使用甲磺酸伊马替尼治疗费城阳性白血病的方法

    公开(公告)号：US08697702B2

    公开(公告)日：2014-04-15

    申请号：US13129903

    申请日：2009-11-30

    申请人： Yanfeng Wang ,  Thea Kalebic ,  Timothy P Hughes ,  Deborah White

    发明人： Yanfeng Wang ,  Thea Kalebic ,  Timothy P Hughes ,  Deborah White

    IPC分类号： A61K31/497

    CPC分类号： A61K31/506

    摘要： The present invention relates to a method of treating Philadelphia-positive leukemia (Ph+ leukemia), in a particular chronic myeloid leukemia (CML), in a human patient population. More specifically, the present invention pertains to a method of treating Ph+ leukemia, such as CML or Phi+ ALL, in a human patient suffering from Ph+ leukemia comprising the steps of (a) administering a predetermined fixed amount of Imatinib as a free base or in the form of a pharmaceutically acceptable salt thereof to the human patient, (b) collecting at least one blood sample from the patient, e.g. within the first 12 months of treatment, (c) determining the plasma trough level (Cmin) of Imatinib, (d) determining the OCT-1 Activity in the blood sample, and (e) adjusting the dose of Imatinib applied to the individual patient in a manner that an Imatinib Cmin value is achieved in the patient of at least 800 ng/mL, if in step (c) an Imatinib Cmin value of less than 800 ng/mL is found and in step (d) an OCT-1 Activity is found below 6.0 to 10.0 ng/200,000 cells.

    摘要翻译： 本发明涉及在人类患者群体中治疗特定慢性骨髓性白血病（CML）中的费城阳性白血病（Ph +白血病）的方法。 更具体地，本发明涉及在患有Ph +白血病的人类患者中治疗Ph +白血病（例如CML或Phi + ALL）的方法，包括以下步骤：（a）施用预定的固定量的伊马替尼作为游离碱或 其药学上可接受的盐的形式提供给人类患者，（b）从患者收集至少一种血液样品， 在治疗的头12个月内，（c）确定伊马替尼的血浆谷值（Cmin），（d）确定血液样品中的OCT-1活性，和（e）调整施用于个体患者的伊马替尼剂量 如果在步骤（c）中发现伊马替尼Cmin值小于800ng / mL，并且在步骤（d）中OCT-1 活性发现低于6.0至10.0ng / 20万个细胞。

    Structure and method to fabricate MOSFET with short gate
    26.
    发明授权
    Structure and method to fabricate MOSFET with short gate 有权
    用短栅制造MOSFET的结构和方法

    公开(公告)号：US07943467B2

    公开(公告)日：2011-05-17

    申请号：US12016317

    申请日：2008-01-18

    申请人： Huilong Zhu ,  Brian J. Greene ,  Yanfeng Wang ,  Daewon Yang

    发明人： Huilong Zhu ,  Brian J. Greene ,  Yanfeng Wang ,  Daewon Yang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7833 ,  H01L21/28079 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6659 ,  Y10S257/901

    摘要： A method of producing a semiconducting device is provided that in one embodiment includes providing a semiconducting device including a gate structure atop a substrate, the gate structure including a dual gate conductor including an upper gate conductor and a lower gate conductor, wherein at least the lower gate conductor includes a silicon containing material; removing the upper gate conductor selective to the lower gate conductor; depositing a metal on at least the lower gate conductor; and producing a silicide from the metal and the lower gate conductor. In another embodiment, the inventive method includes a metal as the lower gate conductor.

    摘要翻译： 提供了一种制造半导体器件的方法，其在一个实施例中包括提供包括在衬底顶部的栅极结构的半导体器件，所述栅极结构包括包括上栅极导体和下栅极导体的双栅极导体，其中至少下部 栅极导体包括含硅材料; 去除对下栅极导体选择性的上栅极导体; 在至少所述下栅极导体上沉积金属; 并从金属和下部栅极导体产生硅化物。 在另一个实施例中，本发明的方法包括作为下栅极导体的金属。

    METHOD OF OPTIMIZING THE TREATMENT OF PHILADELPHIA-POSITIVE LEUKEMIA WITH ABL TYROSINE KINASE INHIBITORS
    28.
    发明申请
    METHOD OF OPTIMIZING THE TREATMENT OF PHILADELPHIA-POSITIVE LEUKEMIA WITH ABL TYROSINE KINASE INHIBITORS 审中-公开
    用ABL酪氨酸激酶抑制剂优化治疗菲律宾阳性白血病的方法

    公开(公告)号：US20090281113A1

    公开(公告)日：2009-11-12

    申请号：US12442126

    申请日：2007-09-20

    申请人： Insa Gathmann ,  Francois-Xavier Mahon ,  Mathieu Molimard ,  Stephane Picard ,  Yanfeng Wang

    发明人： Insa Gathmann ,  Francois-Xavier Mahon ,  Mathieu Molimard ,  Stephane Picard ,  Yanfeng Wang

    IPC分类号： A61K31/506 ,  A61P35/02

    CPC分类号： A61K31/506 ,  A61K31/00 ,  G01N33/49 ,  G01N2800/52

    摘要： The present invention provides a method of treating Philadelphia positive (Ph+) leukemia, such as Philadelphia chromosome positive acute lymphoblastic leukemia (Ph+ ALL) or chronic myeloid leukemia (CML), in a human patient population comprising the steps of (a) administering a predetermined fixed amount of a Bcr-Abl tyrosine kinase inhibitor, such as Imatinib, or a pharmaceutically acceptable salt thereof to human patients suffering from a Ph+ leukemia, (b) collecting at least one blood sample from said patients, (c) determining the plasma trough level (Cmin) of the Bcr-Abl tyrosine kinase inhibitor or of a metabolite thereof as well as the MMR rates, (d) assessing a discrimination potential of trough plasma concentrations for MMR and identifying a Cmin threshold for optimal sensitivity and specificity and (e) adjusting the dose of the inhibitor of the Bcr-Abl tyrosine kinase or a pharmaceutically acceptable salt thereof applied to the individual patients from said patient population and, optionally, future patients suffering from a Ph+ leukemia in a manner that a Cmin is achieved in each single patient equal to or higher than the Cmin threshold obtained under step (d).

    摘要翻译： 本发明提供了一种在人类患者群体中治疗费城阳性（Ph +）白血病如费城染色体阳性急性淋巴细胞白血病（Ph + ALL）或慢性骨髓性白血病（CML）的方法，包括以下步骤：（a） 将固定量的Bcr-Abl酪氨酸激酶抑制剂（例如伊马替尼）或其药学上可接受的盐给予患有Ph +白血病的人类患者，（b）从所述患者收集至少一种血液样品，（c）测定血浆槽 Bcr-Abl酪氨酸激酶抑制剂或其代谢物的水平（Cmin）以及MMR率，（d）评估MMR的谷浆浓度的鉴别潜力，并鉴定最佳灵敏度和特异性的Cmin阈值，（e ）调节从所述患者群体应用于个体患者的Bcr-Abl酪氨酸激酶抑制剂或其药学上可接受的盐的剂量 以及任选地，患有Ph +白血病的未来患者以等于或高于步骤（d）获得的Cmin阈值的每个单个患者中实现Cmin的方式。