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32 条记录 (耗时 0.03 秒)

    Mask blank, method of manufacturing the same, and transfer mask
    23.
    发明授权
    Mask blank, method of manufacturing the same, and transfer mask 有权
    掩模毛坯，其制造方法和转印掩模

    公开(公告)号：US09104112B2

    公开(公告)日：2015-08-11

    申请号：US13823206

    申请日：2011-09-29

    申请人： Kazuya Sakai ,  Masahiro Hashimoto ,  Takeyuki Yamada

    发明人： Kazuya Sakai ,  Masahiro Hashimoto ,  Takeyuki Yamada

    IPC分类号： G03F1/50 ,  G03F1/38

    CPC分类号： G03F1/50 ,  G03F1/38

    摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.

    摘要翻译： 提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。 掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。 薄膜2具有含有烃的氧化膜形式的表面改性层。 薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。

    Mask blank, transfer mask, and film denseness evaluation method
    24.
    发明授权
    Mask blank, transfer mask, and film denseness evaluation method 有权
    掩模空白，转印掩模和胶片密度评估方法

    公开(公告)号：US08709681B2

    公开(公告)日：2014-04-29

    申请号：US13264664

    申请日：2010-04-09

    申请人： Osamu Nozawa ,  Kazuya Sakai

    发明人： Osamu Nozawa ,  Kazuya Sakai

    IPC分类号： G03F1/50

    CPC分类号： G03F1/54 ,  G03F1/32 ,  Y10T428/24802 ,  Y10T428/31504

    摘要： A relative density of a light-shielding film made of MoSi, which is given by relative density=(actual density/theoretical density)×100, is obtained using a density (actual density) calculated by an XRR method and a theoretical density obtained from a material composition. By obtaining a dense film having a relative density greater than 94%, the thickness of an alterated layer, caused by exposure light, at a surface of the MoSi film can be made not more than 2.0 nm so that the dimensional change of a transfer pattern can be made small.

    摘要翻译： 使用由相对密度=（实际密度/理论密度）×100给出的由MoSi制成的遮光膜的相对密度，使用通过XRR法计算的密度（实际密度）和从 材料组成。 通过获得相对密度大于94％的致密膜，可以使MoSi膜的表面处的由曝光光引起的改变层的厚度不大于2.0nm，使得转印图案的尺寸变化 可以做小

    Method of manufacturing transfer mask and method of manufacturing semiconductor device
    28.
    发明授权
    Method of manufacturing transfer mask and method of manufacturing semiconductor device 有权
    传输掩模的制造方法和制造半导体器件的方法

    公开(公告)号：US08197993B2

    公开(公告)日：2012-06-12

    申请号：US13122680

    申请日：2010-10-08

    申请人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

    发明人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

    IPC分类号： G03F1/00 ,  B08B3/00

    CPC分类号： G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  G03F1/82

    摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.

    摘要翻译： 本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

    MASK BLANK, TRANSFER MASK, AND FILM DENSITY EVALUATION METHOD
    29.
    发明申请
    MASK BLANK, TRANSFER MASK, AND FILM DENSITY EVALUATION METHOD 有权
    掩蔽空白，转印面膜和薄膜密度评估方法

    公开(公告)号：US20120034434A1

    公开(公告)日：2012-02-09

    申请号：US13264664

    申请日：2010-04-09

    申请人： Osamu Nozawa ,  Kazuya Sakai

    发明人： Osamu Nozawa ,  Kazuya Sakai

    IPC分类号： B32B3/00 ,  B32B9/04 ,  G06F15/00 ,  B29B7/00

    CPC分类号： G03F1/54 ,  G03F1/32 ,  Y10T428/24802 ,  Y10T428/31504

    摘要： A relative density of a light-shielding film made of MoSi, which is given by relative density=(actual density/theoretical density)×100, is obtained using a density (actual density) calculated by an XRR method and a theoretical density obtained from a material composition. By obtaining a dense film having a relative density greater than 94%, the thickness of an alterated layer, caused by exposure light, at a surface of the MoSi film can be made not more than 2.0 nm so that the dimensional change of a transfer pattern can be made small.

    摘要翻译： 使用由相对密度=（实际密度/理论密度）×100给出的由MoSi制成的遮光膜的相对密度，使用通过XRR法计算的密度（实际密度）和从 材料组成。 通过获得相对密度大于94％的致密膜，可以使MoSi膜的表面处的由曝光光引起的改变层的厚度不大于2.0nm，使得转印图案的尺寸变化 可以做小

    Chrysomycin derivative compounds and use as antitumor agents
    30.
    发明授权
    Chrysomycin derivative compounds and use as antitumor agents 失效
    赤霉素衍生物，用作抗肿瘤剂

    公开(公告)号：US6030951A

    公开(公告)日：2000-02-29

    申请号：US308710

    申请日：1999-07-08

    申请人： Takashi Nakashima ,  Tadashi Fujii ,  Kazuya Sakai ,  Tomohiro Sameshima ,  Hiroyuki Kumagai ,  Takeo Yoshioka

    发明人： Takashi Nakashima ,  Tadashi Fujii ,  Kazuya Sakai ,  Tomohiro Sameshima ,  Hiroyuki Kumagai ,  Takeo Yoshioka

    IPC分类号： C07D311/78 ,  C07D407/04 ,  C12P17/06 ,  A61K31/70 ,  C07H7/04

    CPC分类号： C07D407/04 ,  C07D311/78 ,  C12P17/06

    摘要： Disclosed are the novel C-glycoside compounds Mer-1020dA, Mer-1020dB, Mer-1020dC and Mer-1020dD which have a chromophore group in common with well-known chrysomycins A and B, but can be distinguished from the chrysomycins and the like in that the novel C-glycoside compounds have a sugar residue having a higher degree of oxidation, as well as the compound Mer-1020dE comprising only the chromophore thereof. Among these compounds, the C-glycoside compounds are antibiotics which have low toxicity and can strongly inhibit the growth of solid cancer cells in particular.

    摘要翻译： PCT No.PCT / JP97 / 04007 Sec。 371日期：1999年7月8日 102（e）1999年7月8日PCT PCT 1997年11月4日PCT公布。 公开号WO98 / 22612 PCT 日期1998年5月28日公开了具有发色团组的新颖的C-糖苷化合物Mer-1020dA，Mer-1020dB，Mer-1020dC和Mer-1020dD，与着名的科莫昔霉素A和B相同，但可以区别于科莫昔霉素 因为新型C-糖苷化合物具有较高氧化度的糖残基以及仅包含其发色团的化合物Mer-1020dE。 在这些化合物中，C-糖苷化合物是具有低毒性并特别强烈地抑制固体癌细胞生长的抗生素。