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1.发明授权公开(公告)号：US08999609B2
公开(公告)日：2015-04-07
申请号：US13639686
申请日：2011-04-08
申请人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
发明人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
CPC分类号： G03F1/32 , B82Y30/00 , C23C14/0036 , C23C14/0641 , G03F1/26 , G03F1/54 , G03F7/2041 , Y10S977/755
摘要： Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.
摘要翻译： 提供一种相位移掩模坯料，其将由主要包含过渡金属，硅和氮的材料制成的光半透射膜（相移膜）的照射耐久性提高到具有200nm波长的曝光光 或更小，从而可以改善掩模寿命，制造这种相移掩模坯料的方法和相移掩模。 相移掩模空白用于制造适于施加ArF准分子激光曝光光的相移掩模。 相移掩模空白在透明基板上具有轻半透射膜。 轻半透射膜是主要包含过渡金属，硅和氮的不完全氮化物膜。 过渡金属与过渡金属和轻半透射膜中的硅的含量比小于9％。
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公开(公告)号：US20130071777A1
公开(公告)日：2013-03-21
申请号：US13639686
申请日：2011-04-08
申请人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
发明人： Osamu Nozawa , Hiroaki Shishido , Kazuya Sakai
CPC分类号： G03F1/32 , B82Y30/00 , C23C14/0036 , C23C14/0641 , G03F1/26 , G03F1/54 , G03F7/2041 , Y10S977/755
摘要： Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate.The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.
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公开(公告)号：US08709681B2
公开(公告)日：2014-04-29
申请号：US13264664
申请日：2010-04-09
申请人： Osamu Nozawa , Kazuya Sakai
发明人： Osamu Nozawa , Kazuya Sakai
IPC分类号： G03F1/50
CPC分类号： G03F1/54 , G03F1/32 , Y10T428/24802 , Y10T428/31504
摘要： A relative density of a light-shielding film made of MoSi, which is given by relative density=(actual density/theoretical density)×100, is obtained using a density (actual density) calculated by an XRR method and a theoretical density obtained from a material composition. By obtaining a dense film having a relative density greater than 94%, the thickness of an alterated layer, caused by exposure light, at a surface of the MoSi film can be made not more than 2.0 nm so that the dimensional change of a transfer pattern can be made small.
摘要翻译： 使用由相对密度=（实际密度/理论密度）×100给出的由MoSi制成的遮光膜的相对密度，使用通过XRR法计算的密度（实际密度）和从 材料组成。 通过获得相对密度大于94％的致密膜，可以使MoSi膜的表面处的由曝光光引起的改变层的厚度不大于2.0nm，使得转印图案的尺寸变化 可以做小
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公开(公告)号：US20120034434A1
公开(公告)日：2012-02-09
申请号：US13264664
申请日：2010-04-09
申请人： Osamu Nozawa , Kazuya Sakai
发明人： Osamu Nozawa , Kazuya Sakai
CPC分类号： G03F1/54 , G03F1/32 , Y10T428/24802 , Y10T428/31504
摘要： A relative density of a light-shielding film made of MoSi, which is given by relative density=(actual density/theoretical density)×100, is obtained using a density (actual density) calculated by an XRR method and a theoretical density obtained from a material composition. By obtaining a dense film having a relative density greater than 94%, the thickness of an alterated layer, caused by exposure light, at a surface of the MoSi film can be made not more than 2.0 nm so that the dimensional change of a transfer pattern can be made small.
摘要翻译： 使用由相对密度=（实际密度/理论密度）×100给出的由MoSi制成的遮光膜的相对密度，使用通过XRR法计算的密度（实际密度）和从 材料组成。 通过获得相对密度大于94％的致密膜，可以使MoSi膜的表面处的由曝光光引起的改变层的厚度不大于2.0nm，使得转印图案的尺寸变化 可以做小
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5.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08715892B2
公开(公告)日：2014-05-06
申请号：US13611707
申请日：2012-09-12
申请人： Noriyuki Sakaya , Osamu Nozawa
发明人： Noriyuki Sakaya , Osamu Nozawa
摘要： A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.
摘要翻译： 掩模坯料用于制造适于施加ArF准分子激光曝光光的二值掩模，并且具有用于在透明基板上形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且曝光用光的密度为2.8以上。 下层由含有钽和氮的材料制成，厚度为33nm以上。 上层由含有钽和氧的材料制成，厚度为3nm以上。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光的相位差为60度以下。
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公开(公告)号：US08283092B2
公开(公告)日：2012-10-09
申请号：US12394657
申请日：2009-02-27
申请人： Osamu Nozawa
发明人： Osamu Nozawa
摘要： A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and containing less than 62 at % nitrogen. The material is capable of being dry-etched with a chlorine-based gas containing no oxygen. The light-shielding film further includes a front-surface antireflection layer formed on the light-shielding layer and made of a material not capable of being dry-etched with a chlorine-based gas, but capable of being dry-etched with a fluorine-based gas.
摘要翻译： 光掩模坯料具有在透明基板上由至少两层构成的遮光膜。 遮光膜包括由主要包含氮化钽并且含有小于62at％的氮的材料制成的遮光层。 该材料能够用不含氧的氯基气体进行干蚀刻。 遮光膜还包括形成在遮光层上并由不能用氯气气体进行干法蚀刻的材料制成的表面抗反射层，但能够用氟 - 基于气体。
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7.发明申请公开(公告)号：US20120100470A1
公开(公告)日：2012-04-26
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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公开(公告)号：US20100040961A1
公开(公告)日：2010-02-18
申请号：US12542282
申请日：2009-08-17
申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F1/00
摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
摘要翻译： 一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。
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9.发明授权Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same 有权半色调相移掩模空白，半色调相移掩模及其制造方法公开(公告)号：US07632612B2
公开(公告)日：2009-12-15
申请号：US11478687
申请日：2006-07-03
申请人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
发明人： Yuuki Shiota , Osamu Nozawa , Ryo Ohkubo , Hideaki Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/80 , Y10T428/24331 , Y10T428/31616
摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
摘要翻译： 用于制造半色调相移掩模的半色调相移掩模坯料包括透明基板，形成在用于透射曝光光束的基板上的透光部分，形成在基板上用于透射部分曝光的移相器部分 光束作为透射光束并且将透射光束的相位移动预定量，以及用于形成移相器部分的移相器膜。 半色调相移掩模具有使得通过透光部分和通过移相器部分的光束在它们之间的边界部分附近彼此抵消，从而保持和改善在边界部分处的优异的对比度 曝光图案被转印到要曝光的物体的表面上。 移相器膜包括以硅，氧和氮为主要成分的膜和形成在膜和透明基底之间的蚀刻阻挡膜。
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公开(公告)号：US07402228B2
公开(公告)日：2008-07-22
申请号：US10771997
申请日：2004-02-04
申请人： Osamu Nozawa , Hideaki Mitsui
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： C23C14/35
CPC分类号： G03F1/32 , C23C14/0036 , C23C14/0641 , C23C14/225 , C23C14/505 , G03F1/26 , G03F1/68
摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.
摘要翻译： 公开了一种相移掩模坯料的制造方法，其中可以尽可能地减少坯料之间的相位角和透射率的分散，并且产率令人满意。 在相移掩模空白的制造方法中，使用溅射法在透明基板上连续地形成薄膜的工艺包括：依次对多个基板进行一系列将透明基板供应到溅射室 在溅射室中形成用于形成图案的薄膜，并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。
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