-
公开(公告)号：US5753936A
公开(公告)日：1998-05-19
申请号：US479856
申请日：1995-06-07
CPC分类号： G03G5/08221 , G03G5/08214 , G03G5/08235 , G03G5/08292 , Y10S428/913 , Y10T428/24942 , Y10T428/265
摘要： An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电摄影的图像形成构件具有包含由硅和/或锗作为基质的氢化非晶半导体和基质中包含的至少一种化学改性剂如碳，氮和氧的光电导层。
-
公开(公告)号：US5585149A
公开(公告)日：1996-12-17
申请号：US448123
申请日：1995-05-23
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20 , B05D3/06 , G03G5/00
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.
摘要翻译： 通过使用高于甲硅烷的硅烷气体的等离子体CVD形成含有H，优选10-40原子％H的非晶硅层，其用作电子照相感光构件的光电导层。
-
公开(公告)号：US4982251A
公开(公告)日：1991-01-01
申请号：US511952
申请日：1990-04-17
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/205 , H01L21/336 , H01L21/822 , H01L27/04 , H01L27/12 , H01L29/04 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L29/78 , H01L29/78618 , H01L29/78675
摘要： A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.
摘要翻译： 半导体元件的主要部分由含有0.01〜1原子％的氟原子的多晶硅半导体层构成。
-
公开(公告)号：US4905072A
公开(公告)日：1990-02-27
申请号：US188677
申请日：1988-04-29
申请人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
发明人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
IPC分类号： H01L21/306 , H01L29/04
CPC分类号： H01L29/04 , H01L21/30604 , H01L2924/0002
摘要： A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).
摘要翻译： 半导体器件包括含有不超过3原子％氢原子并且表面不均匀度最大不超过800的多晶硅薄膜的半导体层。 它也可能具有20安培/秒的蚀刻速率。 当用HF，HNO 3和冰醋酸（1:3:6）的混合物蚀刻时。
-
公开(公告)号：US4670369A
公开(公告)日：1987-06-02
申请号：US872935
申请日：1986-06-11
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
-
26.发明授权Electrophotographic image forming member having hydrogenated amorphous photoconductive layer including carbon 失效具有包含碳的氢化非晶光电导层的电子照相图像形成部件
公开(公告)号：US4664998A
公开(公告)日：1987-05-12
申请号：US790155
申请日：1985-10-22
CPC分类号： G03G5/08235 , G03G5/08221 , G03G5/08292
摘要： An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电摄影的图像形成部件具有光电导层，该光电导层包括由硅和/或锗作为基质构成的氢化非晶半导体和基质中所含的至少一种化学改性剂，例如碳，氮和氧。
-
27.发明授权Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine 失效具有0.01〜5原子％氯的多晶硅层的薄膜晶体管
公开(公告)号：US4625224A
公开(公告)日：1986-11-25
申请号：US456717
申请日：1983-01-10
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
IPC分类号： H01L29/78 , G02F1/136 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/822 , H01L27/04 , H01L27/12 , H01L29/04 , H01L29/786 , H01L49/02
CPC分类号： H01L29/78684 , H01L29/04 , H01L29/78675
摘要： A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.
摘要翻译： 具有含有0.01〜5原子％的氯原子的多晶硅半导体层的主要部分的半导体元件。
-
28.发明授权
公开(公告)号：US4552824A
公开(公告)日：1985-11-12
申请号：US695428
申请日：1985-01-28
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
摘要翻译： 使用含有H，优选10-40原子％H的非晶硅层作为电子照相感光构件的光电导层。
-
公开(公告)号：US4461819A
公开(公告)日：1984-07-24
申请号：US269846
申请日：1981-06-03
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
-
30.发明授权Color image sensor with three line sensors on different layers separated by electrically-insulating layers 失效彩色图像传感器，在由绝缘层分隔的不同层上的三线传感器
公开(公告)号：US4763189A
公开(公告)日：1988-08-09
申请号：US28052
申请日：1987-03-19
申请人： Toshiyuki Komatsu , Masaki Fukaya , Tatsumi Shoji , Masaru Kamio , Nobuyuki Sekimura , Katsumi Nakagawa , Hirofumi Iwamoto , Shinichi Seitoh
发明人： Toshiyuki Komatsu , Masaki Fukaya , Tatsumi Shoji , Masaru Kamio , Nobuyuki Sekimura , Katsumi Nakagawa , Hirofumi Iwamoto , Shinichi Seitoh
CPC分类号： H01L27/14667 , G03F7/0007 , H04N1/486
摘要： A line sensor for color reading comprises a plurality of line sensors, each having photosensors arranged one-dimensionally, for the number of the color signals to be separated arranged in parallel with each other on one and the same substrate; and a color filter for color signal separation directly disposed on the light-receiving portion of each of said line sensors. The parallel line sensors may be disposed so as to be non-coplanar, e.g., by provision of insulating layers at least on wiring sections of the first and second line sensors, the second and third line sensors being disposed on the first and second insulating layers, respectively.
摘要翻译： 用于彩色读取的线传感器包括多个线传感器，每个线传感器具有一维排列的光电传感器，用于在同一基板上彼此并联布置的待分离的颜色信号的数量; 以及用于颜色信号分离的滤色器，其直接设置在每个所述线传感器的光接收部分上。 平行线传感器可以被布置为非共面的，例如至少在第一和第二线传感器的布线部分上设置绝缘层，第二和第三线传感器设置在第一和第二绝缘层上 ， 分别。
-
-
-
-
-
-
-
-
-
搜索结果
158 条记录 (耗时 0.044 秒)
