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    Thin film transistor utilizing hydrogenated polycrystalline silicon
    3.
    发明授权
    Thin film transistor utilizing hydrogenated polycrystalline silicon 失效
    利用氢化多晶硅的薄膜晶体管

    公开(公告)号：US4814842A

    公开(公告)日：1989-03-21

    申请号：US201259

    申请日：1988-05-25

    申请人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

    发明人： Katsumi Nakagawa ,  Toshiyuki Komatsu ,  Yutaka Hirai ,  Satoshi Omata ,  Yoshiyuki Osada ,  Takashi Nakagiri

    IPC分类号： H01L21/205 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L29/78618 ,  H01L29/78 ,  H01L29/78675 ,  H01L29/78684

    摘要： A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

    摘要翻译： 薄膜晶体管包括衬底，包括设置在所述衬底上的含有3原子％以下的氢的多晶硅的半导体层，设置在所述半导体层的表面部分中的源极区域和漏极区域，设置在所述衬底上的绝缘层 所述半导体层位于这两个区域之间的部分，设置在所述绝缘层上的栅电极，与源区形成电接触的源电极和与漏区形成电接触的漏极，所述栅之间的重叠部分 通过栅极电极和源极区域之间的绝缘层以及位于所述栅极电极和漏极区域之下的绝缘层的所述栅极电极之间的电极开始宽度为2000或更小。