Abstract:
A differential crystal oscillator circuit uses a bias transistor to generate a bias voltage from a bias current. The bias voltage is supplied to the control terminals of a differential pair of transistors. The differential transistors operate to produce a differential output between corresponding end terminals thereof, which is provided to a reference crystal oscillator to establish an oscillation frequency at the differential output.
Abstract:
A differential crystal oscillator circuit uses a bias transistor to generate a bias voltage from a bias current. The bias voltage is supplied to the control terminals of a differential pair of transistors. The differential transistors operate to produce a differential output between corresponding end terminals thereof, which is provided to a reference crystal oscillator to establish an oscillation frequency at the differential output.
Abstract:
Cross-coupled low noise amplifier for cellular applications. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. In one embodiment, this design is particularly adaptable to cellular telephone applications. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A very high output impedance is provided by using two transistors (implemented in a triple well configuration) with resistive source degeneration. A higher than typical power supply voltage can be employed (if desired) to accommodate the voltage drops of the resistors and transistors.
Abstract:
Cross-coupled low noise amplifier for cellular applications. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. In one embodiment, this design is particularly adaptable to cellular telephone applications. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A very high output impedance is provided by using two transistors (implemented in a triple well configuration) with resistive source degeneration. A higher than typical power supply voltage can be employed (if desired) to accommodate the voltage drops of the resistors and transistors.
Abstract:
Aspects of a method and system for an integrated LC resonant current gain boosting amplifier may include amplifying within a chip, via an on-chip LC current gain circuit, an alternating current (AC) generated by an on-chip voltage-to-current converter, and converting within the chip, via an on-chip current-to-voltage circuit; the amplified alternating current to an output voltage. The on-chip LC current gain circuit comprises only passive components, which may include one or more resistors, one or more capacitors, and one or more inductors.
Abstract:
Aspects of a method and system for a low power fully differential noise canceling low noise amplifier (NC LNA) are provided. The NC LNA may receive signals via a single ended input and may generate an amplified symmetric differential output from the received signals. The NC LNA may utilize capacitor dividers, such as a capacitor bank, in the single ended input in order to provide impedance transformation that enables low power operation and matching to an input port. The NC LNA may generate one portion of the amplified symmetric differential output via a voltage divider, which may comprise a plurality of capacitors, such as a capacitor bank. The NC LNA may be implemented utilizing one or more circuits.
Abstract:
Radio frequency amplifier with constant gain setting. A circuitry that includes triple well connected MOSFETs is employed to eliminate body effects therein. The voltage gain as presented herein, being implemented using a ratio of certain elements within the circuitry, is immune to variations in temperature, power supply voltage, and process variations. One implementation employs an array of selectable MOSFETs to allow for more than one gain setting to be provided by the amplifier. Such an amplifier has a variable/selectable gain setting. An appropriately placed MOSFET is employed to provide the desired input impedance (e.g., 50Ω). This design can be implemented using multiple n-channel metal oxide semiconductor field-effect transistors (N-MOSFETs) (some of which are triple well connected) and p-channel metal oxide semiconductor field-effect transistors (P-MOSFETs), or alternatively using P-MOSFETs and N-MOSFETs.
Abstract:
Aspects of a method and system for an integrated LC resonant current gain boosting amplifier may include amplifying within a chip, via an on-chip LC current gain circuit, an alternating current (AC) generated by an on-chip voltage-to-current converter, and converting within the chip, via an on-chip current-to-voltage circuit; the amplified alternating current to an output voltage. The on-chip LC current gain circuit comprises only passive components, which may include one or more resistors, one or more capacitors, and one or more inductors.
Abstract:
Aspects of a method and system for processing signals in a high performance receive chain may include amplifying a plurality of radio frequency signals in one or more respective one or ones of a plurality of amplifier chains in a multistandard radio frequency front-end, which may comprise one or more shared processing stages. The plurality of radio frequency signals may be compliant with a plurality of radio frequency communication standards and may be received concurrently. The one or more shared processing stages may be shared between two or more of the plurality of amplifier chains. Each of the two or more of the plurality of amplifier chains may be operable to amplify signals compliant with different radio frequency communication standards.
Abstract:
Aspects of a method and system for processing signals in a high performance receive chain may include amplifying radio frequency signals in amplifier chains in a multistandard radio frequency front-end, comprising one or more shared processing stages, and combining, with substantially equal gain, a number of phase-shifted radio frequency signals of the radio frequency signals into substantially equal-gain-combined radio frequency signals. The substantially equal-gain-combined radio frequency signals may be demodulated to obtain inphase channels and quadrature channels. A number of inphase channels and quadrature channels may be processed in I-channel processing blocks and Q-channel processing blocks to generate an output analog baseband signal. The multistandard radio frequency front-end may be capable of processing Bluetooth® signals and Wireless Local Area Network (WLAN) signals. The amplifier chains may comprise a first amplifier and a second amplifier, where the first amplifier may be shared between Bluetooth® signal processing paths and WLAN signal processing paths.