公开(公告)号：US06828683B2

公开(公告)日：2004-12-07

申请号：US09219041

申请日：1998-12-23

申请人： Weimin Li ,  Zhiping Yin

发明人： Weimin Li ,  Zhiping Yin

IPC分类号： H01L2348

CPC分类号： H01L21/76834 ,  H01L21/3185 ,  H01L21/76801 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.

摘要翻译： 一方面，本发明包括一种半导体处理方法，其中在半导体衬底上形成导电含铜材料，并且在导电材料附近形成第二材料。 在导电材料和第二材料之间形成阻挡层。 阻挡层包括具有与氮和有机材料化学键合的硅的化合物。 在另一方面，本发明包括包含与氮和有机材料化学键合的硅的物质组合物。 氮不与碳结合。 另一方面，本发明包括半导体处理方法。 提供半导体衬底并且在半导体衬底上形成层。 该层包括具有与氮和有机材料化学键合的硅的化合物。

公开(公告)号：US06784094B2

公开(公告)日：2004-08-31

申请号：US10744261

申请日：2003-12-22

申请人： Zhiping Yin ,  Gurtej Sandhn

发明人： Zhiping Yin ,  Gurtej Sandhn

IPC分类号： H01L214763

CPC分类号： H01L21/76897 ,  H01L21/0276 ,  H01L21/318 ,  H01L21/76802 ,  H01L21/76814

摘要： An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is SixOyNz:H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH4 flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH4 and N2O, where the ratio of SiH4:N2O is in the range of about 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used for defining contact openings, openings for forming capacitor structures, or any other openings in oxide layers.

摘要翻译： 提供了具有相对高的蚀刻速率的抗反射涂层材料层，使得其可以在相对较短的时间段内清洁所定义的开口同时移除，而不影响开口的临界尺寸。 形成这种层的方法包括提供衬底组合表面并使用至少含硅前体，含氮前体和含氧前体的气体混合物。 该层在约50℃至约600℃的温度范围内形成。通常，沉积的抗反射涂层材料为SixOyNz：H，其中x在约0.39至约0.65的范围内， y在约0.02至约0.56的范围内，z在约0.05至约0.33的范围内，并且其中无机抗反射涂层材料层中的氢的原子百分比在约10原子％至 约40原子％。 总SiH 4流通常在约80sccm至约400sccm的范围内。 气体混合物可以包括SiH 4和N 2 O，其中SiH 4 :N 2 O的比例在约0.25至0.60的范围内。 无机抗反射涂层材料层可用于限定接触开口，用于形成电容器结构的开口或氧化物层中的任何其它开口。

公开(公告)号：US06670284B2

公开(公告)日：2003-12-30

申请号：US10121645

申请日：2002-04-12

申请人： Zhiping Yin

发明人： Zhiping Yin

IPC分类号： H01L2131

CPC分类号： H01L23/5329 ,  H01L21/0276 ,  H01L21/3145 ,  H01L2924/0002 ,  Y10S438/905 ,  H01L2924/00

摘要： A method for fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the anti-reflective coating is to be deposited. The anti-reflective coating may include silicon, oxygen and nitrogen, and is preferably of the general formula SixOyNz, where x equals 0.40 to 0.65, y equals 0.02 to 0.56 and z equals 0.05 to 0.33. Preferably, x+y+z equals one. The method may also include fabricating a silicon nitride layer over the anti-reflective coating. A semiconductor device which includes a silicon nitride layer over the anti-reflective coating has a density of less than about 40,000 particles or surface roughness features in the silicon nitride of about 120-150 nanometers dimension per eight inch wafer. Accordingly, a mask that is subsequently formed over the silicon nitride layer has a substantially uniform thickness and is substantially distortion-free.

摘要翻译： 一种用于在半导体器件结构上制造基本光滑表面的抗反射涂层的方法，包括在其中要沉积抗反射涂层的处理室中产生来自惰性气体的等离子体。 抗反射涂层可以包括硅，氧和氮，并且优选为通式SixOyNz，其中x等于0.40至0.65，y等于0.02至0.56，z等于0.05至0.33。 优选地，x + y + z等于1。 该方法还可以包括在抗反射涂层上制造氮化硅层。 在抗反射涂层上包括氮化硅层的半导体器件具有小于约40,000个颗粒的密度或氮化硅中的表面粗糙度特征，每八英寸晶片约120-150纳米尺寸。 因此，随后在氮化硅层上形成的掩模具有基本均匀的厚度并且基本上无变形。

公开(公告)号：US06518117B2

公开(公告)日：2003-02-11

申请号：US09823200

申请日：2001-03-29

申请人： Er-Xuan Ping ,  Zhiping Yin

发明人： Er-Xuan Ping ,  Zhiping Yin

IPC分类号： H01L218242

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/84 ,  H01L28/91 ,  H01L29/945

摘要： The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.

公开(公告)号：US06423631B1

公开(公告)日：2002-07-23

申请号：US09625164

申请日：2000-07-25

申请人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

发明人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

IPC分类号： H01L214763

CPC分类号： G03F7/091 ,  G03F7/092 ,  H01L21/0276 ,  H01L21/32 ,  H01L21/76202 ,  Y10T428/24471 ,  Y10T428/24917

摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.

摘要翻译： 形成用于集成电路制造的氧化扩散阻挡层叠体的方法包括在半导体衬底组件上形成无机抗反射材料层，然后在无机抗反射材料层上形成氧化扩散阻挡层。 形成这种堆叠的另一种方法包括在半导体衬底组件上形成衬垫氧化物层，然后在衬垫氧化物层上形成无机抗反射材料层，形成在抗反射材料层上的氧化扩散阻挡层。 形成叠层的另一种方法包括在半导体衬底组件上形成焊盘氧化物层。 然后在焊盘氧化物层上形成第一氧化扩散阻挡层，在第一氧化扩散阻挡层上形成无机抗反射材料层，在无机抗反射材料层上形成第二氧化扩散阻挡层。 抗反射材料层可以包括选自氮化硅，氧化硅和氮氧化硅的材料层，并且还可以是富硅层。 氧化扩散阻挡层可以用于场集成电路中用于隔离的场区氧化。 此外，还描述了各种氧化扩散阻挡层叠体。

公开(公告)号：US06380611B1

公开(公告)日：2002-04-30

申请号：US09146674

申请日：1998-09-03

申请人： Zhiping Yin ,  Gurtej S. Sandhu

发明人： Zhiping Yin ,  Gurtej S. Sandhu

IPC分类号： H01L2358

CPC分类号： H01L21/31144 ,  H01L21/0276

摘要： An improved photolithography technique is provided whereby the beneficial effects of using an anti-reflective coating may be realized while maintaining critical dimensions in each subsequent step. This improvement is realized by the treatment of the anti-reflective coating with a gaseous plasma or a solution of sulfuric acid and hydrogen peroxide. By treating the anti-reflective coating with gaseous plasma or solution of sulfuric acid and hydrogen peroxide, no “footing” results and the critical dimensions as set by the photoresist mask are preserved to provide an accurately patterned mask for subsequent steps.

公开(公告)号：US08598632B2

公开(公告)日：2013-12-03

申请号：US13530679

申请日：2012-06-22

申请人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

发明人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

IPC分类号： H01L27/118

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.

摘要翻译： 具有不同尺寸特征的集成电路，其中较小特征与具有通过常规光刻形成的尺寸的较大特征具有间距倍增关系。

公开(公告)号：US20130175061A1

公开(公告)日：2013-07-11

申请号：US13824238

申请日：2011-09-07

申请人： Hongbao Guo ,  Weipeng Zhang ,  Chunjie Ma ,  Chenggong Ma ,  Zhiping Yin

发明人： Hongbao Guo ,  Weipeng Zhang ,  Chunjie Ma ,  Chenggong Ma ,  Zhiping Yin

IPC分类号： A62C13/22

CPC分类号： A62C13/22 ,  A62C5/006 ,  A62C13/003

摘要： A hand-held aerosol fire suppression apparatus comprises an outer cylinder, inner cylinder components, a handle, and an activation device, wherein each outer cylinder is provided with at least three inner cylinder components. Compared with the prior art, the present invention has the following advantages: 1. the outer cylinder is provided with three or more inner cylinder components, so as to achieve a large ejecting area, a high fire suppression efficiency, and safety in use; 2. The members of the inner cylinder component are assembled together as one component, so as to achieve a convenient assembly and a high production efficiency.

摘要翻译： 手持气溶胶灭火装置包括外筒，内筒部件，手柄和致动装置，其中每个外筒设置有至少三个内筒部件。 与现有技术相比，本发明具有以下优点：1.外筒具有三个或更多个内筒部件，以实现大喷射面积，高灭火效率和使用安全性; 内筒部件的构件作为一个部件组装在一起，以实现方便的组装和高生产效率。

公开(公告)号：US20090302323A1

公开(公告)日：2009-12-10

申请号：US12155455

申请日：2008-06-04

申请人： Zhiping Yin ,  Xiangli Li

发明人： Zhiping Yin ,  Xiangli Li

IPC分类号： H01L31/112 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H04N5/37457

摘要： Imager pixels with low-level interconnect sections, methods of assembling imager pixels with low-level interconnect sections, and systems containing imager pixels with low-level interconnect sections. Imager pixels are formed such that specific interconnections between transistors and other components of an imager array are removed from one or more upper level metallization sections and placed on a low-level interconnect section closer to the photodetector, such that one upper metallization section is eliminated.

摘要翻译： 具有低级互连部分的成像器像素，使用低级互连部分组装成像器像素的方法，以及包含具有低级互连部分的成像器像素的系统。 成像器像素被形成为使得晶体管和成像器阵列的其他部件之间的特定互连从一个或多个上层金属化部分移除并放置在更靠近光电检测器的低级互连部分上，从而消除一个上部金属化部分。

公开(公告)号：US07129180B2

公开(公告)日：2006-10-31

申请号：US10661100

申请日：2003-09-12

申请人： Gurtej S. Sandhu ,  Zhiping Yin ,  Weimin Li

发明人： Gurtej S. Sandhu ,  Zhiping Yin ,  Weimin Li

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10852

摘要： A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide materials. The masking structure may be used as a mask in an etching process during fabrication of semiconductor devices.