Tunneling field effect transistor
    30.
    发明授权

    公开(公告)号:US11227953B2

    公开(公告)日:2022-01-18

    申请号:US16767479

    申请日:2018-11-28

    Abstract: A tunneling field effect transistor according to an embodiment of the present invention includes: a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type and realizing a heterojunction with respect to the first semiconductor layer in a first region; a gate insulating layer over the second semiconductor layer in the first region; a gate electrode layer over the gate insulating layer; a first electrode layer electrically connected to the first semiconductor layer; a second electrode layer electrically connected to the second semiconductor layer; and a first insulating layer interposed between the first semiconductor layer and the second semiconductor layer in a second region adjacent to the first region toward the second electrode layer.

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