公开(公告)号：US07037438B2

公开(公告)日：2006-05-02

申请号：US10070286

申请日：2001-04-20

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L21/302

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract translation: 一种用于制造半导体部件的方法，例如多层半导体元件，例如具有例如由硅制成的半导体衬底的微机械部件，例如压力传感器，以及根据该方法制造的半导体部件。 为了降低这种半导体部件的制造成本，在第一步骤中，在半导体部件中制造第一多孔层，在第二工序中，在半导体部件的第一多孔层的下面或从半导体部件的第一多孔层制造中空或空腔， 所述中空或空腔能够设置有外部通路口。

公开(公告)号：US20050181529A1

公开(公告)日：2005-08-18

申请号：US11011888

申请日：2004-12-13

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: B81B3/00 ,  H01L21/00 ,  H01L29/24 ,  H01L33/00

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US06930366B2

公开(公告)日：2005-08-16

申请号：US10491193

申请日：2002-09-27

Applicant: Jyrki Kiihamäki

Inventor： Jyrki Kiihamäki

IPC: B81C1/00 ,  H01L21/762 ,  H01L29/84

CPC classification number: B81C1/00047 ,  B81C1/00412 ,  B81C2201/0115 ,  B81C2203/0145 ,  H01L21/76286

Abstract: The present publication discloses a method for forming cavities in prefabricated silicon wafers comprising a first silicon layer (1), a second monocrystalline silicon layer, or a so-called structural layer (3), oriented substantially parallel with said first silicon layer (1) and an insulating layer (2) situated between said first and second layers (1, 3). According to the method, in at least one of the conducting silicon layers (1, 3) are fabricated windows (4) extending through the thickness of the layer, and cavities are etched in the insulating layer (2) by means of etchants passed to the layer via said fabricated windows (4). According to the invention, subsequent to the fabrication step of the windows (4) and prior to the etching step, a thin porous layer (5) is formed on the surface to be processed such that the etchants can be passed through said porous layer into said cavities (6) being etched and, after the cavities (6) are etched ready, at least one supplementary layer (7) is deposited in order to render to the material of said porous layer impermeable to gases.

Abstract translation: 本公开公开了一种用于在预制硅晶片中形成空腔的方法，其包括基本上平行于所述第一硅层（1）取向的第一硅层（1），第二单晶硅层或所谓的结构层（3） 和位于所述第一和第二层（1,3）之间的绝缘层（2）。 根据该方法，至少一个导电硅层（1,3）是延伸穿过该层的厚度的制造窗（4），并且通过传递给绝缘层（2）的蚀刻剂在绝缘层（2）中蚀刻空腔 所述层经由所述制造的窗口（4）。 根据本发明，在窗口（4）的制造步骤之后并且在蚀刻步骤之前，在待加工的表面上形成薄的多孔层（5），使得蚀刻剂可以通过所述多孔层进入 所述腔（6）被蚀刻，并且在空腔（6）被蚀刻就绪之后，沉积至少一个辅助层（7），以使所述多孔层的材料不能透过气体。

公开(公告)号：US20050142687A1

公开(公告)日：2005-06-30

申请号：US11011898

申请日：2004-12-13

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: B81C1/00 ,  H01L21/00 ,  H01L29/84

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115

Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

Abstract translation: 微机械振动膜传感器的制造方法包括提供具有至少部分地位于隔膜下方的第一区域，隔膜和空腔的半导体基板。 在第一区域的至少一部分上方，在半导体衬底的表面中或表面上产生第二区域，第二区域的至少一部分被设置为十字形。 隔膜由沉积的密封层形成，并且包括至少一部分挡条。

公开(公告)号：US20050016949A1

公开(公告)日：2005-01-27

申请号：US10492009

申请日：2002-09-04

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  H01B13/00

CPC classification number: B81C1/00047 ,  B81C1/00246 ,  B81C2201/0115 ,  B81C2201/014

Abstract: A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.

Abstract translation: 提出了一种通过使用微系统技术的标准方法，能够简单且成本有效地在部件中产生具有光学透明壁的空腔的方法。 为此目的，首先制造出硅区域，其通过至少一个光学透明覆层在所有侧面上被包围。 然后在包层中产生至少一个开口。 在该开口上，由包覆层包围的硅被溶出，在包覆层内形成空腔。 在本文中，包覆层用作蚀刻阻挡层。

公开(公告)号：US06832523B2

公开(公告)日：2004-12-21

申请号：US10017772

申请日：2001-10-29

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: G01L100

CPC classification number: G01N25/68 ,  B81B3/0081 ,  B81B2203/0127 ,  B81C2201/0115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A micromechanical component having a substrate and a diaphragm positioned on the substrate. Underneath the diaphragm a region made of porous material is provided, which mechanically supports the diaphragm and thermally insulates it.

Abstract translation: 具有基板和位于基板上的隔膜的微机械部件。 在隔膜下方设置有由多孔材料制成的区域，该区域机械地支撑隔膜并将其热绝缘。

公开(公告)号：US20040212028A1

公开(公告)日：2004-10-28

申请号：US10852833

申请日：2004-05-24

Inventor： George M. Dougherty

IPC: H01L021/00 ,  H01L029/82

CPC classification number: B81C1/00158 ,  B01D67/0072 ,  B01D71/02 ,  B01D2323/10 ,  B01D2325/02 ,  B01D2325/04 ,  B81B2201/10 ,  B81C2201/0115 ,  B81C2201/017 ,  H01L21/28525 ,  H01L29/16

Abstract: A membrane structure comprising a silicon film having a grain structure including grains defining pores therebetween.

Abstract translation: 一种膜结构，其包括具有晶粒结构的硅膜，所述晶粒结构包括在其间限定孔的颗粒。

公开(公告)号：US20040188808A1

公开(公告)日：2004-09-30

申请号：US10742055

申请日：2003-12-18

Inventor： Hans Artmann ,  Thorsten Pannex ,  Hans-Peter Trah ,  Franz Laermer

IPC: H01L029/04

CPC classification number: C04B38/007 ,  B81C1/00492 ,  B81C2201/0115 ,  C04B2111/28 ,  C04B35/14

Abstract: A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described. In particular, in a porization of crystalline silicon, starting from an edge area of the region, the crystalline orientation of the silicon relative to the edge area is selected such that a thermal conductivity comes about along a direction perpendicular to the edge area that differs from, in particular is lower than, the thermal conductivity, that comes about in this direction in an otherwise analogous porization of crystalline silicon having a orientation or an equivalent orientation relative to this edge area.

Abstract translation: 具有多孔硅或多孔氧化硅区域的结构元件，其从至少大部分为晶体硅的区域的边缘区域开始从孔化获得。 相对于边缘区域，晶体硅具有取向不同于<100>取向的晶体取向或者由于对称原因等同的取向。 该结构元件适用于质量流量传感器，用于传感器和/或致动器结构或气体传感器的热解耦的部件。 此外，描述了用于设定结构元件的多孔硅或多孔氧化硅区域的热导率的方法。 特别地，在从区域的边缘区域开始的晶体硅的孔化中，选择硅相对于边缘区域的晶体取向，使得热导率沿垂直于与边缘区域不同的边缘区域的方向 ，特别是低于导热率，其在相对于该边缘区域具有<100>取向或等同取向的晶体硅的另外类似的孔化中在该方向上。

公开(公告)号：US20040147057A1

公开(公告)日：2004-07-29

申请号：US10473762

申请日：2004-03-30

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: H01L021/00

CPC classification number: B81C1/00047 ,  B81B2201/0278 ,  B81C2201/0115 ,  B81C2201/0139

Abstract: A method for manufacturing a semiconductor component (100; . . . ; 700), a multilayer semiconductor component in particular, preferably a micromechanical component, such as a heat transfer sensor in particular having a semiconductor substrate (101), in particular made of silicon, and a sensor region (404). For inexpensive manufacture of a thermal insulation between the semiconductor substrate (101) and the sensor region (404) a porous layer (104; 501) is provided in the semiconductor component (100; . . . ; 700).

Abstract translation: 一种用于制造半导体部件（100 ... ... 700）的方法，特别是多层半导体部件，优选微机械部件，例如特别是具有半导体衬底（101）的传热传感器，特别是由硅 ，和传感器区域（404）。 为了廉价地制造半导体衬底（101）和传感器区域（404）之间的绝热，在半导体部件（100 ... 700）中设置多孔层（104; 501）。

公开(公告)号：US20020170875A1

公开(公告)日：2002-11-21

申请号：US10070286

申请日：2002-07-08

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: C23F001/00

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

Abstract: A method is described for producing a semiconductor component (100; . . . ; 2200) particularly a multilayer semiconductor element, preferably a micromechanical component, particularly a pressure sensor, having a semiconductor substrate (101), particularly made of silicon, and a semiconductor component produced according to the method. In particular in order to reduce the production cost of such a semiconductor component, it is suggested that the method be refined so that in a first step a first porous layer (104; 1001; 1301) is produced in the semiconductor component, and in a second step a hollow or cavity (201; 1101; 1201; 1401; 2101; 2201) is produced under or from the first porous layer (104; 1001; 1301) in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract translation: 描述了用于制造半导体部件（100 ... 2200）的方法，特别是具有特别是由硅制成的半导体衬底（101）的多层半导体元件，优选微机械部件，特别是压力传感器，以及半导体 根据该方法生产的组分。 特别是为了降低这种半导体元件的制造成本，建议该方法被精炼，使得在第一步骤中，半导体元件中产生第一多孔层（104; 1001; 1301），并且在 第二步骤，在半导体部件中的第一多孔层（104; 1001; 1301）之下或之下制造中空或空腔（201; 1101; 1201; 1401; 2101; 2201），所述中空或空腔能够设置有 外部通道开口。