Abstract:
A vibrating beam force transducer is comprised of an oscillating sensing element having an output frequency indicative of the force applied to the sensing element. The sensing element has a variable electrical resistance which can vary in accordance with temperature fluctuations over the operating range of the transducer.A drive circuit utilizes an AC drive signal source that is electrically coupled to the sensing element to drive the sensing element at its resonant frequency which is a function of the force applied to the sensing element. The drive circuit has a DC compensation circuit that alters the electrical characteristics of the drive circuit in response to variations in the electrical resistance of the sensing element.
Abstract:
A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam attached at both ends to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed on the substrate directly beneath and spaced apart from the flexure beam. A drive electrode is formed in or on the beam, centered between the upper and lower bias electrodes transversely with respect to the direction of beam elongation. The upper and lower electrodes are biased at constant voltage levels, of equal magnitude and opposite polarity. The drive electrode, ordinarily biased at ground, is selectively charged by applying an oscillating drive voltage, to cause mechanical oscillation of the beam. A piezoresistor element, formed on the beam, senses beam oscillation and provides a position indicating input to the oscillator circuit that drives the beam. The beam tends to oscillate at its natural resonant frequency. The piezoresistor thus provides the natural resonant frequency to the oscillating circuit, adjusting the frequency of the beam drive signal toward coincidence with the natural resonant frequency. A shield electrode can be formed on the flexure beam between the piezoresistor and the drive electrode, to insure against parasitic capacitance. In alternative embodiments, the drive signal is applied to one of the bias electrodes to oscillate the beam, and beam oscillation is sensed capacitively.
Abstract:
The sensor according to the present invention provides a device for measuring the magnitude of an applied load as a shift in resonant frequency of a mechanical resonator caused by load-induced strains on the resonator. The sensor includes a substrate, generally constructed of a semiconductor material, e.g. silicon, a diaphragm substantially supported along its outer periphery by the substrate, a boss abutting a region of the diaphragm remote from the outer periphery of the diaphragm, at least one resonator in the form of a beam having one end integral to the diaphragm proximate the region of the boss and the other end integral to the diaphragm remote from the boss, a hermetic seal for enclosing the resonator, and an exciter/detector for measuring changes in the natural frequency of the resonator due to an applied load. Preferably, the sensor includes a differential resonator configuration in which the resonators are positioned rectilinearly with respect to each other and are covered by the same hermetic seal.
Abstract:
A dual vibrating beam force transducer having an electrostatic drive system. The transducer comprises a body having first and second generally parallel beams, coupled together at their ends. First and second electrodes are positioned adjacent to but not in contact with the respective beams. A drive circuit causes an oscillating voltage to be applied to the electrodes. The beams are thus subjected to electrostatic forces that cause the beams to oscillate in a vibration plane containing both beams. The mechanical resonance of the beams controls the oscillation frequency, such that the frequency is a function of a force exerted along the beams. An embodiment is also described in which the drive means is coupled directly to one of the beams.
Abstract:
An example system comprises a microelectromechanical system (MEMS) sensor, a strain gauge, and a strain compensation circuit. The MEMS sensor is operable to generate a sensor output signal that corresponds to a sensed condition (e.g., acceleration, orientation, and/or pressure). The strain gauge is operable to generate a strain measurement signal indicative of a strain on the MEMS sensor. The strain compensation circuit is operable to modify the sensor output signal to compensate for the strain based on the strain measurement signal. The strain compensation circuit stores sensor-strain relationship data indicative of a relationship between the sensor output signal and the strain measurement signal. The strain compensation circuit is operable to use the sensor-strain relationship data for the modifying of the sensor output signal. The modification of the sensor output signal comprises one or both of: removal of an offset from the sensor signal, and application of a gain to the sensor signal.
Abstract:
An example system comprises a microelectromechanical system (MEMS) sensor, a strain gauge, and a strain compensation circuit. The MEMS sensor is operable to generate a sensor output signal that corresponds to a sensed condition (e.g., acceleration, orientation, and/or pressure). The strain gauge is operable to generate a strain measurement signal indicative of a strain on the MEMS sensor. The strain compensation circuit is operable to modify the sensor output signal to compensate for the strain based on the strain measurement signal. The strain compensation circuit stores sensor-strain relationship data indicative of a relationship between the sensor output signal and the strain measurement signal. The strain compensation circuit is operable to use the sensor-strain relationship data for the modifying of the sensor output signal. The modification of the sensor output signal comprises one or both of: removal of an offset from the sensor signal, and application of a gain to the sensor signal.
Abstract:
A flexible printed circuit board assembly for electronic devices is disclosed. An example embodiment includes: a force sense resistor (FSR) comprising: at least one flexible common reference trace; at least one flexible conductive trace having a varying-width pattern and being placed adjacent to the at least one flexible common reference trace, the conductive trace being at a varying distance from the common reference trace relative to a location along the FSR; and a flexible piece of piezoresistive material covering the common reference trace and the conductive trace, the flexible piece of piezoresistive material being configured to produce a measurable electrical resistance relative to a distance between the conductive trace and the common reference trace as pressure is applied to the piezoresistive material, the FSR enabling detection of pressure levels and locations along the FSR.
Abstract:
A micro-force sensor comprising a one-piece plate including a first area defining a first recess, which must be held in position relative to a mounting, a second area connected to the first area defining the first recess and a second recess, a measuring beam across the first recess having a first end embedded in the first area and a second end connected to the second area, an excitation beam across the second recess having two ends embedded in the second area and being provided with at least one excitation element, a third area connected to the first area and an effector beam having one free end for receiving the force being measured and one end-embedded in the third area, and a fourth area connecting the embedded end of the effector beam to the second end of the measuring beam, which is provided with a measuring element.
Abstract:
This invention relates to a resonant device with detection in the piezo-resistive plane made using surface technologies on a bulk, which comprises a resonator connected to this bulk by at least one embedded portion, means of exciting this resonator and detection means comprising at least one suspended beam type strain gauge made from piezo-resistive material, in which each strain gauge has a common plane with the resonator, and is connected to this resonator at a point situated outside of this at least one embedded portion to increase the stress observed by this strain gauge.
Abstract:
An apparatus is provided and includes compressed conductive elements that each have independently adjustable dimensions sufficient to provide substantially enhanced piezoresistance to a current flowing across each conductive element with each of the conductive elements subjected to compressive strain, the conductive elements being oscillated in a direction parallel to that of the compressive strain at a defined frequency such that a resistance of the conductive elements to the current is thereby substantially reduced.