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    PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF
    21.
    发明申请
    PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    光电池及其制造方法

    公开(公告)号：US20130000728A1

    公开(公告)日：2013-01-03

    申请号：US13583987

    申请日：2010-09-08

    申请人： Naoyuki Ohse ,  Kensuke Takenaka

    发明人： Naoyuki Ohse ,  Kensuke Takenaka

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/1824 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/075 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic cell includes a photoelectric conversion element (PCE) in which an i-type silicon layer formed of a microcrystalline silicon film is provided between an n-type silicon layer and a p-type silicon layer, and the n-type silicon layer or p-type silicon layer positioned on a substrate side is configured of an amorphous silicon film. The PCE is formed wherein a mixture of a silane containing gas and hydrogen gas is introduced into a chamber and a seed layer formed of a microcrystalline silicon film is formed between the n-type silicon layer or p-type silicon layer positioned on the substrate side and the i-type silicon layer. The crystallization rate of a portion in contact with the n-type silicon layer or p-type silicon layer positioned on the substrate side is lower than that of the i-type silicon layer, and the rate increases continuously, or gradually in two or more stages, toward the i-type silicon layer side, continuing to the i-type silicon layer.

    摘要翻译： 光伏电池包括其中在n型硅层和p型硅层之间设置由微晶硅膜形成的i型硅层的光电转换元件（PCE），以及n型硅层或 位于基板侧的p型硅层由非晶硅膜构成。 形成PCE，其中将含硅烷的气体和氢气的混合物引入室中，并且在位于基板侧的n型硅层或p型硅层之间形成由微晶硅膜形成的晶种层 和i型硅层。 与位于基板侧的n型硅层或p型硅层接触的部分的结晶化率低于i型硅层的结晶化速率，并且速率连续增加，或者在两个以上逐渐增加 阶段，朝向i型硅层侧继续到i型硅层。

    SOLAR CELL AND METHOD OF FABRICATING THE SAME
    25.
    发明申请
    SOLAR CELL AND METHOD OF FABRICATING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号：US20120167966A1

    公开(公告)日：2012-07-05

    申请号：US13101996

    申请日：2011-05-05

    申请人： Yen-Cheng Hu ,  Hsin-Feng Li ,  Zhen-Cheng Wu

    发明人： Yen-Cheng Hu ,  Hsin-Feng Li ,  Zhen-Cheng Wu

    IPC分类号： H01L31/06 ,  H01L31/20

    CPC分类号： H01L31/03685 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/1824 ,  H01L31/1872 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.

    摘要翻译： 太阳能电池包括半导体基底，第一掺杂半导体层，绝缘层，第二掺杂半导体层和第一电极层。 半导体基底具有第一掺杂型。 设置在半导体基底上的第一掺杂半导体层具有掺杂的接触区域。 绝缘层设置在第一掺杂半导体层上，暴露掺杂的接触区域。 第二掺杂半导体层设置在绝缘层和掺杂接触区域上。 第一掺杂半导体层，掺杂接触区域和第二掺杂半导体层具有第二掺杂类型，并且第二掺杂半导体层的掺杂剂浓度在第一掺杂半导体层和掺杂接触区域的掺杂浓度之间。 第一电极层对应于掺杂的接触区域设置。

    CHARGE-COUPLED PHOTOVOLTAIC DEVICES
    26.
    发明申请
    CHARGE-COUPLED PHOTOVOLTAIC DEVICES 审中-公开
    电荷耦合光电器件

    公开(公告)号：US20120048329A1

    公开(公告)日：2012-03-01

    申请号：US13152211

    申请日：2011-06-02

    申请人： Lalita Manchanda

    发明人： Lalita Manchanda

    IPC分类号： H01L31/042 ,  H01L31/06

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/035245 ,  H01L31/035281 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic (solar) cell comprises two photovoltaic devices that are quantum mechanically coupled via a charge-coupling layer. One of the PV devices may have an energy band gap that is larger than or equal to an energy band gap of the other of the PV devices. The effective electron barrier heights or electron affinity on side portions of the quantum coupling layer are higher than the maximum energy of photo-generated electrons in the photovoltaic devices. The photovoltaic device with larger band gap may include an electron and/or hole transport layer and photon absorbing layer. Photons are transmitted through the transport layer to the absorbing layer. Some high energy photons are absorbed by the absorbing layer. The absorbing layer may function as an absorber of high energy photons and generator of electrons/holes (or excitons). Holes generated in the absorbing layer may be quenched by electrons from the second photovoltaic device.

    摘要翻译： 光伏（太阳能）电池包括通过电荷耦合层进行量子力学耦合的两个光伏器件。 PV器件中的一个可以具有大于或等于另一个PV器件的能带隙的能带隙。 在量子耦合层的侧面上的有效电子势垒高度或电子亲和力高于光电器件中光生电子的最大能量。 具有较大带隙的光电器件可包括电子和/或空穴传输层和光子吸收层。 光子通过传输层传输到吸收层。 一些高能光子被吸收层吸收。 吸收层可用作高能光子的吸收体和电子/空穴（或激子）的发生器。 在吸收层中产生的孔可以由来自第二光伏器件的电子淬火。

    Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors
    27.
    发明授权
    Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors 有权
    背面纳米级纹理化，以提高硅太阳能电池和光电探测器的IR响应

    公开(公告)号：US08120027B2

    公开(公告)日：2012-02-21

    申请号：US12927423

    申请日：2010-11-15

    申请人： Leonard Forbes

    发明人： Leonard Forbes

    IPC分类号： H01L29/04 ,  H01L31/0232 ,  H01L21/02 ,  H01L21/00

    CPC分类号： H01L31/02327 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0527 ,  H01L31/056 ,  H01L31/075 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548

    摘要： The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

    摘要翻译： 用于红外光的硅的吸收系数非常低，并且大多数太阳能电池在太阳光下吸收很少的红外光能。 可以使用晶体硅的非常厚的电池来增加红外光能的吸收，但是结晶细胞的成本是令人望而却步的。 本发明涉及使用较便宜的微晶硅太阳能电池以及使用具有漫射散射的背面纹理来提供红外光吸收的非常大的增加。 具有扩散散射和太阳能电池的光滑前表面的背面纹理导致多次内部反射，光捕获，并且大大提高了红外太阳能的吸收。

    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF
    29.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
    光电转换装置及其制造方法

    公开(公告)号：US20110259420A1

    公开(公告)日：2011-10-27

    申请号：US13087714

    申请日：2011-04-15

    申请人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Yoshiaki ITO ,  Takuro OHMARU

    发明人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Yoshiaki ITO ,  Takuro OHMARU

    IPC分类号： H01L31/0203

    CPC分类号： H01L31/202 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02672 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/1816 ,  H02S40/32 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.

    摘要翻译： 本发明的目的是减少不能到达的光电转换元件的区域，以抑制发电效率的劣化，并且抑制电压转换元件的制造成本。 本发明涉及一种透射光电转换装置，其包括：包括n型半导体层，本征半导体层和p型半导体层的光电转换元件; 电压转换元件，其与光电转换元件重叠并且包括用于沟道形成区域的氧化物半导体膜; 以及电连接光电转换元件和电压转换元件的导电元件。 光电转换元件是太阳能电池。 电压转换元件包括具有包括氧化物半导体膜的沟道形成区的晶体管。 电压转换元件是DC-DC转换器。

    TANDEM PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    30.
    发明申请
    TANDEM PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    TANDEM光伏器件及其制造方法

    公开(公告)号：US20110253203A1

    公开(公告)日：2011-10-20

    申请号：US12987142

    申请日：2011-01-09

    申请人： Seung-Yeop MYONG

    发明人： Seung-Yeop MYONG

    IPC分类号： H01L31/06 ,  H01L31/18

    CPC分类号： H01L31/0725 ,  H01L31/0236 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.

    摘要翻译： 公开了一种光电器件，其包括：包括透明导电氧化物层的第一电极; 第一单元电池被放置在第一电极上; 放置在第一单电池上的第二单电池; 并且第二电极被放置在第二单元电池上，其中第一单元电池的本征半导体层包括氢化非晶硅或氢化非晶硅基材料，其中第二单元电池的本征半导体层包括氢化微晶硅或氢化微晶硅 硅基材料，并且其中形成在第一电极的表面上的纹理结构的均方根粗糙度与平均间距的比等于或大于0.05并且等于或小于0.13。