利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

224 条记录 (耗时 0.02 秒)

    Wafer level device package with sealing line having electroconductive pattern and method of packaging the same
    26.
    发明授权
    Wafer level device package with sealing line having electroconductive pattern and method of packaging the same 有权
    具有导电图案的密封线的晶片级器件封装及其封装方法

    公开(公告)号：US07911043B2

    公开(公告)日：2011-03-22

    申请号：US12153705

    申请日：2008-05-22

    申请人： Ju Pyo Hong ,  Seog Moon Choi ,  Tae Hoon Kim ,  Job Ha ,  Seung Wook Park

    发明人： Ju Pyo Hong ,  Seog Moon Choi ,  Tae Hoon Kim ,  Job Ha ,  Seung Wook Park

    IPC分类号： H01L23/02

    CPC分类号： H01L21/50 ,  B81B2207/093 ,  B81C1/00301 ,  B81C2203/0118 ,  B81C2203/019 ,  H01L23/10 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/16195 ,  H01L2924/16235 ,  H03H9/1057 ,  H03H9/1071 ,  H01L2924/00

    摘要： Provided are wafer level package with a sealing line that seals a device and includes electroconductive patterns as an electrical connection structure for the device, and a method of packaging the same. In the wafer level package, a device substrate includes a device region, where a device is mounted, on the top surface. A sealing line includes a plurality of non-electroconductive patterns and a plurality of electroconductive patterns, and seals the device region. A cap substrate includes a plurality of vias respectively connected to the electroconductive patterns and is attached to the device substrate by the sealing line. Therefore, a simplified wafer level package structure that accomplishes electric connection through electroconductive patterns of a sealing line can be formed without providing an electrode pad for electric connection with a device.

    摘要翻译： 提供了具有密封设备并且包括作为设备的电连接结构的导电图案的密封线的晶片级封装以及其封装方法。 在晶片级封装中，器件衬底包括在顶表面上安装器件的器件区域。 密封线包括多个非导电图案和多个导电图案，并且密封该装置区域。 盖基板包括分别连接到导电图案的多个通孔，并通过密封线附接到器件基板。 因此，可以形成通过密封线的导电图案实现电连接的简化的晶片级封装结构，而不需要提供用于与器件电连接的电极焊盘。

    METHODS AND APPARATUS FOR TEMPERATURE CONTROL OF DEVICES AND MECHANICAL RESONATING STRUCTURES
    27.
    发明申请
    METHODS AND APPARATUS FOR TEMPERATURE CONTROL OF DEVICES AND MECHANICAL RESONATING STRUCTURES 有权
    器件和机械共振结构温度控制的方法与装置

    公开(公告)号：US20100315179A1

    公开(公告)日：2010-12-16

    申请号：US12781076

    申请日：2010-05-17

    申请人： Klaus Juergen Schoepf ,  Reimund Rebel

    发明人： Klaus Juergen Schoepf ,  Reimund Rebel

    IPC分类号： H03H9/02

    CPC分类号： H03H9/08 ,  H01L2224/73265 ,  H03H9/02448 ,  H03H9/1057 ,  H03H9/2405 ,  H03H2009/241

    摘要： Methods and apparatus for temperature control of devices and mechanical resonating structures are described. A mechanical resonating structure may include a heating element and a temperature sensor. The temperature sensor may sense the temperature of the mechanical resonating structure, and the heating element may be adjusted to provide a desired level of heating. Optionally, additional heating elements and/or temperature sensors may be included.

    摘要翻译： 描述了用于装置和机械谐振结构的温度控制的方法和装置。 机械共振结构可以包括加热元件和温度传感器。 温度传感器可以感测机械谐振结构的温度，并且可以调节加热元件以提供期望的加热水平。 可选地，可以包括附加的加热元件和/或温度传感器。

    Vacuum packaged single crystal silicon device
    28.
    发明授权
    Vacuum packaged single crystal silicon device 失效
    真空封装单晶硅器件

    公开(公告)号：US07662655B2

    公开(公告)日：2010-02-16

    申请号：US12164850

    申请日：2008-06-30

    申请人： Ijaz H. Jafri ,  Galen P. Magendanz

    发明人： Ijaz H. Jafri ,  Galen P. Magendanz

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

    摘要： A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

    摘要翻译： 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

    Vacuum packaged single crystal silicon device
    30.
    发明授权
    Vacuum packaged single crystal silicon device 失效
    真空封装单晶硅器件

    公开(公告)号：US07407826B2

    公开(公告)日：2008-08-05

    申请号：US11322842

    申请日：2005-12-30

    申请人： Ijaz H. Jafri ,  Galen P. Magendanz

    发明人： Ijaz H. Jafri ,  Galen P. Magendanz

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

    摘要： A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

    摘要翻译： 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。