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公开(公告)号：US08017435B2
公开(公告)日：2011-09-13
申请号：US12307174
申请日：2007-06-01
申请人： Juergen Leib , Hidefumi Yamamoto
发明人： Juergen Leib , Hidefumi Yamamoto
IPC分类号： H01L21/00 , H01L23/495
CPC分类号： B81C1/0023 , H01L2224/13 , H01L2924/1461 , H03H9/0542 , H03H9/1014 , H03H9/1057 , H03H9/1071 , H01L2924/00
摘要： The present invention relates to the field of electronic devices and their associated driver and/or controller integrated circuits and in particular to the mechanical packaging of electronic devices and to the packaging of electronic devices and their associated driver and/or controller integrated circuits.
摘要翻译： 本发明涉及电子设备领域及其相关的驱动器和/或控制器集成电路，特别涉及电子设备的机械封装以及电子设备及其相关联的驱动器和/或控制器集成电路的封装。
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公开(公告)号：US08399293B2
公开(公告)日：2013-03-19
申请号：US13231844
申请日：2011-09-13
申请人： Juergen Leib , Hidefumi Yamamoto
发明人： Juergen Leib , Hidefumi Yamamoto
IPC分类号： H01L21/00 , H01L23/495
CPC分类号： B81C1/0023 , H01L2224/13 , H01L2924/1461 , H03H9/0542 , H03H9/1014 , H03H9/1057 , H03H9/1071 , H01L2924/00
摘要： The present invention relates to the field of electronic devices and their associated driver and/or controller integrated circuits and in particular to the mechanical packaging of electronic devices and to the packaging of electronic devices and their associated driver and/or controller integrated circuits.
摘要翻译： 本发明涉及电子设备领域及其相关的驱动器和/或控制器集成电路，特别涉及电子设备的机械封装以及电子设备及其相关联的驱动器和/或控制器集成电路的封装。
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公开(公告)号：US20100059877A1
公开(公告)日：2010-03-11
申请号：US12307174
申请日：2007-06-01
申请人： Juergen Leib , Hidefumi Yamamoto
发明人： Juergen Leib , Hidefumi Yamamoto
CPC分类号： B81C1/0023 , H01L2224/13 , H01L2924/1461 , H03H9/0542 , H03H9/1014 , H03H9/1057 , H03H9/1071 , H01L2924/00
摘要： The present invention relates to the field of electronic devices and their associated driver and/or controller integrated circuits and in particular to the mechanical packaging of electronic devices and to the packaging of electronic devices and their associated driver and/or controller integrated circuits.
摘要翻译： 本发明涉及电子设备领域及其相关的驱动器和/或控制器集成电路，特别涉及电子设备的机械封装以及电子设备及其相关联的驱动器和/或控制器集成电路的封装。
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公开(公告)号：US20120003791A1
公开(公告)日：2012-01-05
申请号：US13231844
申请日：2011-09-13
申请人： Juergen Leib , Hidefumi Yamamoto
发明人： Juergen Leib , Hidefumi Yamamoto
IPC分类号： H01L21/52
CPC分类号： B81C1/0023 , H01L2224/13 , H01L2924/1461 , H03H9/0542 , H03H9/1014 , H03H9/1057 , H03H9/1071 , H01L2924/00
摘要： The present invention relates to the field of electronic devices and their associated driver and/or controller integrated circuits and in particular to the mechanical packaging of electronic devices and to the packaging of electronic devices and their associated driver and/or controller integrated circuits.
摘要翻译： 本发明涉及电子设备领域及其相关的驱动器和/或控制器集成电路，特别涉及电子设备的机械封装以及电子设备及其相关联的驱动器和/或控制器集成电路的封装。
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公开(公告)号：US5889640A
公开(公告)日：1999-03-30
申请号：US711909
申请日：1996-09-12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , G11B5/3116 , G11B5/3932
摘要： A magnetoresistive element generally includes consecutively an antiferromagnetic layer, a first ferromagnetic layer, a non-mangetic layer, and a second ferromagnetic layer. Instead of the non-magnetic layer, the magnetoresistive element may include a combination of a Co layer, a non-magnetic layer, and a Co layer. The antiferromagnetic layer is made of nickel oxide, a mixture of nickel oxide and cobalt oxide, or a laminate of nickel oxide and cobalt oxide. The ferromagnetic layer has a thickness of 1 to 10 nm, and the element has a height of 0.1 to 1 um. The non-magnetic layer has a thickness of 2 to 3 nm, and the antiferromagnetic layer has a thickness of 5 to 30 nm. The magnetoresistive element has an appropriate cross point, outputs an excellent reproduced signal, and has a desirable half-width with respect to the output signal.
摘要翻译： 磁阻元件通常包括反铁磁层，第一铁磁层，非管状层和第二铁磁层。 代替非磁性层，磁阻元件可以包括Co层，非磁性层和Co层的组合。 反铁磁层由氧化镍，氧化镍和氧化钴的混合物，或氧化镍和氧化钴的叠层制成。 铁磁层的厚度为1〜10nm，元件的高度为0.1〜1μm。 非磁性层的厚度为2〜3nm，反铁磁层的厚度为5〜30nm。 磁阻元件具有适当的交叉点，输出优异的再现信号，并且相对于输出信号具有期望的半宽度。
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6.发明授权Magnetoresistance film which is a matrix of at least two specified metals having included submicron particles of a specified magnetic metal or alloy 失效磁阻膜是至少两种特定金属的基体，其中包含特定磁性金属或合金的亚微米颗粒
公开(公告)号：US5594933A
公开(公告)日：1997-01-14
申请号：US497716
申请日：1995-06-30
CPC分类号： B82Y25/00 , G11B5/3903 , H01F10/007 , H01L43/10 , Y10S428/928 , Y10T428/1107 , Y10T428/12014 , Y10T428/12028 , Y10T428/12063 , Y10T428/12465
摘要： The invention relates to a magnetoresistance material, i.e. a conductive material that exhibits magnetoresistance, which is an inhomogeneous system consisting of a nonmagnetic matrix and ultrafine particles of a ferromagnetic material such as Co or Ni--Fe--Co dispersed in the nonmagnetic matrix. With the aim of reducing deterioration of the magnetoresistance effect, an alloy or mixture of at least two metal elements selected from Cu, Ag, Au and Pt is used as the material of the nonmagnetic matrix. Optionally, the nonmagnetic matrix may contain a limited quantity of a supplementary element selected from Al, Cr, In, Mn, Mo, Nb, Pd, Ta, Ti, W, V, Zr and Ir. A film of the magnetoresistance material can be formed on a substrate, and it is optional to interpose a buffer layer between the film and the substrate and/or cover the film with a protective layer.
摘要翻译： 本发明涉及一种磁阻材料，即具有磁阻的导电材料，其是由非磁性基体和分散在非磁性基质中的诸如Co或Ni-Fe-Co的铁磁材料的超微粒子组成的不均匀系统。 为了减少磁阻效应的劣化，使用选自Cu，Ag，Au和Pt中的至少两种金属元素的合金或混合物作为非磁性基体的材料。 可选地，非磁性矩阵可以包含有限量的选自Al，Cr，In，Mn，Mo，Nb，Pd，Ta，Ti，W，V，Zr和Ir的补充元素。 可以在衬底上形成磁阻材料的膜，并且可选地在膜和衬底之间设置缓冲层和/或用保护层覆盖膜。
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公开(公告)号：US20050118747A1
公开(公告)日：2005-06-02
申请号：US10503258
申请日：2003-01-22
CPC分类号： H01S5/0222 , H01L23/10 , H01L2924/0002 , H01S5/02212 , H01S5/02296 , H01L2924/00
摘要： An object of the present invention is to provide a low-priced and highly reliable high-vacuum hermetic seal package. To this end, a method of manufacturing a hermetic seal package according to the present invention is a method of manufacturing a hermetic seal package by anodically bonding an opening of a cylindrical body for forming an outer frame and the outer edge of a flat glass plate to each other, characterized in that anodically bonded surfaces are 0.04 mm to 200 mm in width and not more than 0.20 μm in surface roughness, the cylindrical body consists of a metal consisting of at least one of Fe, Ni and Co or an alloy or conductive ceramics mainly composed of this metal, the glass plate contains alkaline metal ions, and the quantity of inert gas permeation on bonded portions is 1.0×10−15 Pa.m3/s to 1.0×10−8 Pa.m3/s after anodic bonding.
摘要翻译： 本发明的目的是提供一种低价高可靠性的高真空密封封装。 为此，根据本发明的气密密封包装的制造方法是通过阳极结合用于形成外框的圆筒体的开口和平板玻璃板的外边缘的开口来制造气密密封包装的方法， 其特征在于，阳极结合面的宽度为0.04mm〜200mm，表面粗糙度为0.20μm以下，圆筒体由由Fe，Ni，Co中的至少一种构成的金属或合金或导电性 主要由该金属构成的陶瓷，玻璃板含有碱金属离子，接合部分的惰性气体渗透量为1.0×10 -3 Pa〜3× 至阳极接合后的1.0×10 -8 Pa.m 3 / s。
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公开(公告)号：US06063491A
公开(公告)日：2000-05-16
申请号：US38093
申请日：1998-03-11
CPC分类号： H01L43/08 , Y10S428/90 , Y10T428/1121 , Y10T428/26 , Y10T428/265
摘要： The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
摘要翻译： 本发明提供了一种磁电阻效应膜，其包括（a）沉积在基板上的至少两个薄磁膜，（b）介于薄磁膜之间的至少一个薄非磁性膜，（c）与一个薄的反铁磁膜 的薄磁性膜，薄的非磁性膜被插入其间。 由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜（Hr> HC2）的另一个薄磁膜的矫顽力HC2。 薄的反铁磁膜具有由NiO，NixCo1-xO（x = 0.1-0.9）和CoO中的至少两种构成的超晶格结构。 超晶格结构中的原子数相对于Co的比例设定为1.0以上。 即使施加小的外部场，磁阻效应膜也呈现大的电阻线性变化，滞后小。
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公开(公告)号：US06001430A
公开(公告)日：1999-12-14
申请号：US166896
申请日：1998-10-06
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3272 , G11B2005/3996
摘要： A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, Ni.sub.x Co.sub.1-x O (0.1.ltoreq.x.ltoreq.0.9) and C.sub.o O. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc.sub.2 of the other ferromagnetic thin film.
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10.发明授权
公开(公告)号：US5766743A
公开(公告)日：1998-06-16
申请号：US656921
申请日：1996-06-03
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/3268 , H01F41/304 , Y10S428/90 , Y10T428/1121 , Y10T428/24942 , Y10T428/265 , Y10T428/31678
摘要： Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2
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