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    p-n Junction controlled field emitter array cathode
    21.
    发明授权
    p-n Junction controlled field emitter array cathode 失效
    p-n结场控制场发射极阵列阴极

    公开(公告)号：US4513308A

    公开(公告)日：1985-04-23

    申请号：US421766

    申请日：1982-09-23

    Applicant: Richard F. Greene ,  Henry F. Gray

    Inventor： Richard F. Greene ,  Henry F. Gray

    IPC: H01J1/308 ,  H01L29/06 ,  H01L27/12 ,  H01L29/34

    CPC classification number: H01J1/308

    Abstract: A Field Emitter Array comprising a semiconductor substrate with an emitterurface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid I.sub.max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where I.sub.max =j.sub.sat X A.sub.p-n, j.sub.sat being the saturation current density and A.sub.p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating an electric field that induces the emission of the electron current from the emitter tips.

    Abstract translation: 一种场发射器阵列，包括其上形成有发射极表面的半导体衬底。 在发射极表面上设置多个发射极金字塔以发射电子流。 由每个发射极金字塔Imax发射的电子电流的大小由与每个发射极金字塔相关联的反向偏置pn结控制，其中Imax = jsatX Ap-n，jsat是饱和电流密度，Ap-n是 与每个发射极金字塔相关联的反向偏置pn结。 相对于发射极表面和发射极金字塔有正偏压的栅极设置在发射极表面之上，用于产生电场，该电场引发从发射极尖端发射的电子电流。

    Electron sources and equipment having electron sources
    22.
    发明授权
    Electron sources and equipment having electron sources 失效
    具有电子源的电子源和设备

    公开(公告)号：US4506284A

    公开(公告)日：1985-03-19

    申请号：US439143

    申请日：1982-11-04

    Applicant: John M. Shannon

    Inventor： John M. Shannon

    IPC: H01J37/22 ,  H01J1/308 ,  H01J29/04 ,  H01L29/34

    CPC classification number: H01J1/308

    Abstract: An electron source having good electron emission efficiency comprises a silicon or other semiconductor body (10) having an n-type first region (3) which is separated from an n-type or p-type second region (2) by a barrier. The barrier may be a p-n junction between p-type region (2) and the n-type region (3), or it may be a p-type region (1) forming p-n junctions with the n-type regions (2 and 3). By means of electrode connections (13 and 12) to the first and second regions (3 and 2) a potential difference (V) is applied across the barrier so as to bias the first region (3) positive with respect to the second region (2) and thereby to establish a supply of hot electrons (24) injected from the second region (2) across the barrier into the first region (3). These hot electrons (24) are emitted into free space (20) from a surface area (4) of the body (10) which may have a caesium coating (14) to reduce the electron work function. A surface region (5) which may be depleted even at zero bias adjoins the surface area (4) and comprises a p-type doping concentration which serves to form in the body (10) a potential peak which is spaced from the surface area (4) from which the hot electrons (24) are emitted to provide an adjacent drift field (15) which accelerates electrons (24) towards this surface area (4) so assisting the electron emission. The electron sources may be used in cathode-ray tubes, display devices and even electron lithography equipment.

    Abstract translation: 具有良好的电子发射效率的电子源包括具有n型第一区域（3）的硅或其它半导体本体（10），其通过屏障与n型或p型第二区域（2）分离。 势垒可以是p型区域（2）和n型区域（3）之间的pn结，也可以是与n型区域（2和3）形成pn结的p型区域（1） ）。 通过与第一和第二区域（3和2）的电极连接（13和12），跨越势垒施加电位差（V），以便使第一区域（3）相对于第二区域 从而建立从第二区域（2）经过屏障注入到第一区域（3）中的热电子（24）的供应。 这些热电子（24）从主体（10）的可以具有铯涂层（14）的表面区域（4）发射到自由空间（20）中，以减少电子功能。 甚至可以在零偏压下耗尽的表面区域（5）邻接表面区域（4）并且包括用于在体（10）中形成与表面区域间隔开的电位峰值的p型掺杂浓度 4），其中发射热电子（24）以提供相邻的漂移场（15），其使电子（24）朝向该表面区域（4）加速，从而有助于电子发射。 电子源可以用于阴极射线管，显示装置甚至电子光刻设备中。

    Method of semiconductor device for generating electron beams
    23.
    发明授权
    Method of semiconductor device for generating electron beams 失效
    用于产生电子束的半导体器件的方法

    公开(公告)号：US4370797A

    公开(公告)日：1983-02-01

    申请号：US268209

    申请日：1981-05-29

    Applicant: Gerardus G. P. van Gorkom ,  Arthur M. E. Hoeberechts

    Inventor： Gerardus G. P. van Gorkom ,  Arthur M. E. Hoeberechts

    IPC: B01J23/86 ,  C07B61/00 ,  C07C1/00 ,  C07C1/04 ,  C07C67/00 ,  H01J1/308 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J31/38 ,  H01L21/223 ,  H01L21/26

    CPC classification number: H01J9/022 ,  H01J1/308

    Abstract: The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.

    Abstract translation: 本发明涉及分别具有这样的阴极的半导体阴极和相机管和显示管，其基于平行于半导体本体的表面延伸的p-n结中的雪崩击穿。 释放的电子通过设置在器件上的加速电极获得额外的能量。 所产生的效率提高使得平面硅技术中的这种阴极的制造成为可能。 由于在雪崩击穿时p-n结的耗尽区不延伸到表面，所释放的电子显示出尖锐的能量分布。 这使得这种阴极特别适用于照相机管。 此外，他们还可以应用于显示管和平板显示器。

    Semiconductor electron emitter
    25.
    发明授权
    Semiconductor electron emitter 失效
    半导体电子发射器

    公开(公告)号：US3667007A

    公开(公告)日：1972-05-30

    申请号：US3667007D

    申请日：1970-02-25

    Applicant: RCA CORP

    Inventor： KRESSEL HENRY ,  PANKOVE JACQUES ISAAC

    IPC: H01J1/30 ,  H01J1/308 ,  H01L15/00

    CPC classification number: H01J1/308

    Abstract: An electron emitter comprising a body of a semiconductor material which is adapted to generate light therein when properly biased but which is a poor absorber of the generated light. On a surface of the body is a thin region of a semiconductor material which is a good absorber of the generated light and which has an index of refraction which substantially matches the index of refraction of the material of the body. The thin semiconductor material region is adapted to absorb the light from the body and convert the light into free electrons. On the surface of the semiconductor material layer is a thin film of an electropositive work function reducing material which is adapted to emit the electrons formed in the semiconductor material layer.

    Abstract translation: 一种电子发射器，包括半导体材料的主体，其适于在适当偏置时产生光，但是其是所生成的光的不良吸收体。 在身体的表面上是半导体材料的薄区域，其是所产生的光的良好吸收体，并且其折射率基本上与身体的材料的折射率相匹配。 薄半导体材料区域适于吸收来自身体的光并将光转换成自由电子。 在半导体材料层的表面上是适于发射形成在半导体材料层中的电子的正电功能降低材料的薄膜。

    SUBSTRATE STACK EPITAXIES FOR PHOTOCATHODES FOR EXTENDED WAVELENGTHS
    29.
    发明公开
    SUBSTRATE STACK EPITAXIES FOR PHOTOCATHODES FOR EXTENDED WAVELENGTHS 审中-公开

    公开(公告)号：US20240145202A1

    公开(公告)日：2024-05-02

    申请号：US17979639

    申请日：2022-11-02

    Applicant: L3Harris Technologies, Inc.

    Inventor： Bed PANTHA ,  Jacob J. BECKER ,  Jon D. BURNSED

    IPC: H01J1/308

    CPC classification number: H01J1/308

    Abstract: A photocathode epitaxial structure. The photocathode epitaxial structure includes an improved substrate stack. The improved substrate stack includes a GaAs substrate and one or more additional layers formed on the GaAs substrate. The one or more additional layers are configured to provide an improved substrate stack surface with predetermined characteristics for forming a semiconductor device on the improved substrate stack surface. The photocathode epitaxial structure further includes an InGaAs p-type photocathode formed on the improved substrate stack surface. The InGaAs p-type photocathode has a predetermined percentage of In.

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