公开(公告)号：US20050116603A1

公开(公告)日：2005-06-02

申请号：US10901932

申请日：2004-07-29

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: H01J1/05 ,  H01J1/14 ,  H01J1/312 ,  H01J1/38 ,  H01J1/48 ,  H01J19/06 ,  H01J31/12

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/3125

Abstract: An electron emitter 10A has an emitter 12 made of a dielectric material and an upper electrode 14 and a lower electrode 16 for being supplied with a drive voltage Va for emitting electrons. The upper electrode 14 is disposed on an upper surface of the emitter, and the lower electrode 16 is disposed on a lower surface of the emitter 12. The upper electrode 14 has a plurality of through regions 20 through which the emitter 12 is exposed. Each of the through regions 20 of the upper electrode 14 has a peripheral portion 26 having a surface facing the emitter 12 and spaced from the emitter 12.

Abstract translation: 电子发射器10A具有由电介质材料制成的发射极12和用于发射电子的驱动电压Va的上电极14和下电极16。 上电极14设置在发射极的上表面上，下电极16设置在发射极12的下表面上。上电极14具有多个贯通区域20，发射极12通过该贯穿区域20露出。 上电极14的贯通区域20中的每一个具有周边部分26，该周边部分26具有面向发射极12并与发射极12间隔开的表面。

公开(公告)号：US06882100B2

公开(公告)日：2005-04-19

申请号：US10337685

申请日：2003-01-06

Applicant: Zhizhang Chen ,  Sriram Ramamoorthi ,  Terry E McMahon ,  Timothy F. Myers

Inventor： Zhizhang Chen ,  Sriram Ramamoorthi ,  Terry E McMahon ,  Timothy F. Myers

IPC: H01J31/12 ,  H01J1/312 ,  H01J9/02 ,  H01J21/06 ,  H01L29/02 ,  H01J1/30

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.

公开(公告)号：US20050077833A1

公开(公告)日：2005-04-14

申请号：US10962467

申请日：2004-10-13

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC: G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01J37/073 ,  H01J2237/31779

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract translation: 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US20050073234A1

公开(公告)日：2005-04-07

申请号：US10877517

申请日：2004-06-25

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: H01J1/30 ,  H01J1/312 ,  H01J1/38 ,  H01J31/12 ,  H01J63/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

Abstract: An electron emitter has an emitter made of a dielectric material and an upper electrode and a lower electrode for being supplied with a drive voltage for emitting electrons. The upper electrode is disposed on an upper surface of the emitter, and the lower electrode is disposed on a lower surface of the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. Each of the through regions of the upper electrode has a peripheral portion having a surface facing the emitter and spaced from the emitter.

公开(公告)号：US20050029543A1

公开(公告)日：2005-02-10

申请号：US10935795

申请日：2004-09-07

Applicant: Alexander Govyadinov ,  Michael Regan

Inventor： Alexander Govyadinov ,  Michael Regan

IPC: H01J1/312 ,  H01J29/46 ,  H01L29/06 ,  H01L31/0328

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/467 ,  H01J2201/304 ,  H01J2201/3125

Abstract: An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Abstract translation: 发射体包括电子源和阴极。 阴极具有发射表面。 发射极还包括设置在电子源和阴极的发射表面之间的连续各向异性导电层。 各向异性导电层具有各向异性的电阻率分布，并且在发射体的发射表面上提供基本均匀的发射。

公开(公告)号：US06852554B2

公开(公告)日：2005-02-08

申请号：US10085866

申请日：2002-02-27

Applicant: Zhizhang John Chen ,  Sriram Ramamoorthi

Inventor： Zhizhang John Chen ,  Sriram Ramamoorthi

IPC: H01J1/312 ,  H01J9/02 ,  H01L21/00 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025

Abstract: An emitter has a rapid thermal process (RTP) formed emission layer of SiO2, SiOxNy or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.

Abstract translation: 发射体具有形成SiO 2，SiO x N y或其组合的快速热处理（RTP）发射层。 通过快速热处理形成的发射层不需要电铸来稳定膜。 RTP生长的膜是稳定的并且从器件到器件表现出均匀的特性。

公开(公告)号：US06841794B2

公开(公告)日：2005-01-11

申请号：US10369365

申请日：2003-02-18

Applicant: Zhizhang Chen ,  Hung Liao ,  Alexander Govyadinov

Inventor： Zhizhang Chen ,  Hung Liao ,  Alexander Govyadinov

IPC: H01J29/04 ,  H01J1/308 ,  H01J1/312 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J31/12 ,  H01L29/06 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127

Abstract: A method for emitting electrons includes the steps of applying a voltage to an electron source to cause hot electrons to be generated with the source, and applying an electric field to cause at least a portion of the hot electrons to be emitted from the electron source.

Abstract translation: 用于发射电子的方法包括以下步骤：向电子源施加电压以使源产生热电子，并且施加电场以使至少一部分热电子从电子源发射。

公开(公告)号：US6023125A

公开(公告)日：2000-02-08

申请号：US36747

申请日：1998-03-09

Applicant: Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito

Inventor： Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito

IPC: H01J1/312 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L33/00 ,  H01J1/30

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2329/00

Abstract: An electron emission device exhibits a high electron emission efficiency. The device comprises an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode. The insulator layer is a dielectric layer having a thickness of 50 nanometers or more, and formed by a vacuum evaporation process with a layer forming rate of 0.5 to 100 nanometers/minute.

Abstract translation: 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。 绝缘体层是厚度为50纳米以上的电介质层，通过真空蒸镀法形成，层数为0.5〜100纳米/分钟。

公开(公告)号：US5986390A

公开(公告)日：1999-11-16

申请号：US33980

申请日：1998-03-03

Applicant: Takashi Chuman ,  Takamasa Yoshikawa

Inventor： Takashi Chuman ,  Takamasa Yoshikawa

IPC: H01J1/312 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2329/00

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an SiO.sub.2 insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The peak intensity ratio of a Raman spectrum for 3-fold rings of SiO.sub.2 of the insulator layer to 4-fold rings or 5 or more-fold rings thereof is equal to or greater than 20%. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract translation: 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供给层，形成在电子供给层上的SiO 2绝缘体层和形成在绝缘体层上的薄膜金属电极。 绝缘体层的3倍环的SiO 2与4倍环或5倍以上的环的拉曼光谱的峰强度比为20％以上。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

公开(公告)号：US5874802A

公开(公告)日：1999-02-23

申请号：US777312

申请日：1996-12-27

Applicant: Jong-seo Choi ,  Kwi-seuk Choi ,  Kyu-nam Joo

Inventor： Jong-seo Choi ,  Kwi-seuk Choi ,  Kyu-nam Joo

IPC: H01J1/30 ,  H01J1/312 ,  H01J3/02 ,  H01J17/49 ,  H01J29/04 ,  H01J29/48 ,  H01J1/62

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J2201/306

Abstract: A cathode, an electron gun, and a cathode ray tube include a ferroelectric electron source. The cathode includes a substrate; a lower electrode layer on the substrate; a cathode layer, on the lower electrode layer, the cathode layer including a ferroelectric emitter; an upper electrode layer, on the ferroelectric cathode layer, the upper electrode layer having electron emitting regions comprising a plurality of electron emission holes for passing electrons emitted from the ferroelectric emitter; and a driving electrode layer, supported by the upper electrode layer, for controlling passage of electrons through the electron emitting regions in the upper electrode layer and the driving electrode layer.

Abstract translation: 阴极，电子枪和阴极射线管包括铁电电子源。 阴极包括基板; 基底上的下电极层; 阴极层，在所述下电极层上，所述阴极层包括铁电发射体; 上电极层，在铁电阴极层上，具有电子发射区的上电极层包括用于使从铁电发射体发射的电子的多个电子发射孔; 以及由上电极层支撑的用于控制电子通过上电极层和驱动电极层中的电子发射区的驱动电极层。