Abstract:
With a scanning electron microscope having an electron gun and a specimen chamber between which one or more pressure stage apertures are arranged, through whose orifices a primary electron beam can be deflected to a specimen in the specimen chamber, where the lowest pressure stage aperture (18) nearest the specimen, through which the primary electron beam strikes the specimen, is set up to shield an elevated pressure in the specimen chamber with respect to the remaining microscope column of the scanning electron microscope and to allow secondary electrons emanating from the specimen to pass through their orifice to reach at least one detector, the detector is a high-sensitivity detector (74) biased at a positive potential with respect to the specimen. At least one electrode (44, 55) which is at a positive potential with respect to the pressure stage aperture (18) and is adapted to deflect the secondary electrons from the specimen to the detector (74) may be arranged above the bottom pressure stage aperture (18). As an alternative, the scanning electron microscope is equipped for detection of secondary electrons through the orifice of at least one pressure stage aperture which is constructed in layers of at least two conductive layers which are electrically insulated from one another and can be biased with potentials.
Abstract:
The present invention provides a system and method that facilitates measuring and imaging topographical features of a substrate, including lines and trenches having reentrant profiles. One aspect of the invention provides an electron microscope that simultaneously scans a substrate with two or more electron beams that are directed against the substrate with substantially differing angles of incidence. Secondary electrons resulting from the interaction of the substrate with the beams are detected by one or more secondary electron detectors. Each secondary electron detector may simultaneously receive secondary electrons resulting from the interaction of the substrate with two or more electron beams. In another of its aspects, the invention provides methods of analysis that permit the interpretation of such data to analyze critical dimensions and form images of the substrate. Critical dimensions that may be determined include feature heights and reentrant profile shapes. The topographical information provided is more complete than that of conventional SEM imaging and is obtained more rapidly than would be possible using multiple scans of a single electron beam.
Abstract:
In order that the deflection scanning position can be corrected at a time point within a period for fetching information from a subject to be inspected and improvements in accuracy of chip comparison inspection and an inspection near the wafer outer periphery where distortion is large can be assured by correcting the inspection position and biased distortion at a high speed with high accuracy, a digital deflection control scheme is employed in which the deflection scanning signal and correction are all calculated digitally in a deflection controller for deflecting and controlling a charged particle beam irradiated onto a subject to be inspected and the digital value is sequentially converted into an analog value by a time-series train of digital control signal to form a deflection scanning waveform.
Abstract:
The invention relates to a particle beam apparatus with a source for generating a primary particle beam, means for focussing the primary particle beam onto a specimen, means for decelerating back-scattered and/or secondary electrons released at the specimen, said detecting means being located between said source and said focussing means, means for accelerating the primary particle beam from a first energy to a second higher energy and means for decelerating the primary particle beam to a final beam energy. Furthermore, there are provided first additional means to decelerate the primary particle beam shortly before the detecting means and second additional means to accelerate the primary particle beam immediately after the detecting means.
Abstract:
A defect inspection method and apparatus therefor for a pattern to be inspected having a plurality of chips formed so as to be identical detect an image signal of a pattern to be inspected and when the image signal is to be compared with a detected image signal of an adjacent or separated pattern to be inspected on the substrate, convert the gray level so that the brightness of each of two image signals for comparing one or both of the detected image signals is almost identical in the local region by linear conversion having a gain and offset, and when a pattern is inspected using it, highly sensitive defect inspection for a pattern to be inspected for detecting a defect of a semiconductor wafer can be realized.
Abstract:
Method and apparatus for imaging at multiple perspectives of a specimen are disclosed. In one embodiment, an apparatus for generating a multi-perspective image using multiple charged particle beams (e.g., electron beams) is disclosed. In one embodiment, the apparatus generally includes a charged particle beam generator system arranged to generate and control a first charged particle beam directed substantially at a first angle towards the specimen and a second charged particle beam directed substantially at a second angle towards the specimen. The apparatus also includes an image generator arranged to generate one or more images based on charged particles emitted from the specimen in response to the first and second charged particle beams and a controller arranged to cause the charged particle beam generator to direct both the first charged particle beam and the second charged particle beam at a first area of the specimen. In a specific implementation, the charged particles are in the form of electrons and the apparatus is a dual electron beam scanning electron microscope (SEM).
Abstract:
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.
Abstract:
An electron beam irradiation apparatus which irradiates an electron beam to an object for easily detecting a defect of a backscattered electron detector, including: an electron beam generating section for generating an electron beam; a plurality of backscattered electron detectors for detecting backscattered electrons generated when the electron beam is irradiated on a mark; a plurality of attenuation sections for attenuating signal values indicating quantity of backscattered electrons detected by the plurality of backscattered electron detectors; and a defect detecting section for detecting a defect of the plurality of backscattered electron detectors based on the signal values attenuated by the plurality of attenuation sections, with attenuation factors for the plurality of attenuation sections being varied.
Abstract:
The present invention is a sample-stage for a scanning electron microscope. The sample-stage has a base and a horizontal support member, where there is an aperture in the horizontal support member. A vertical support member abuts the base on one end and the horizontal support member on the other end so that the vertical support member is under, and at an angle to, the aperture in the horizontal support member. A collimator, having an aperture in alignment with the aperture in the horizontal support member, abuts the top of the horizontal support member. A first reflector abuts the surface of the vertical support member under the aperture in the horizontal support. A second reflector abuts a portion of the top surface of the base that is not covered by the vertical support member.
Abstract:
Methods and apparatus for calibration of a scanned beam system are provided by sampling a calibration specimen containing an array of targets with a spacing between samples that is greater than the spacing between targets in the array and forming an image from the samples to reduce calibration specimen degradation and to magnify calibration errors to enable very fine calibration of the scanned beam system.