公开(公告)号：US11418888B2

公开(公告)日：2022-08-16

申请号：US16749579

申请日：2020-01-22

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Fabrizio Cerini ,  Enri Duqi ,  Silvia Adorno ,  Lorenzo Baldo

IPC: H04R19/00 ,  H04R19/02 ,  B81B3/00 ,  B81C1/00 ,  H04R1/02 ,  H04R17/00 ,  H04R31/00

Abstract: An actuation structure of a MEMS electroacoustic transducer is formed in a die of semiconductor material having a monolithic body with a front surface and a rear surface extending in a horizontal plane x-y plane and defined in which are: a frame; an actuator element arranged in a central opening defined by the frame; cantilever elements, coupled at the front surface between the actuator element and the frame; and piezoelectric regions arranged on the cantilever elements and configured to be biased to cause a deformation of the cantilever elements by the piezoelectric effect. A first stopper arrangement is integrated in the die and configured to interact with the cantilever elements to limit a movement thereof in a first direction of a vertical axis orthogonal to the horizontal plane, x-y plane towards the underlying central opening.

公开(公告)号：US11407098B2

公开(公告)日：2022-08-09

申请号：US16696772

申请日：2019-11-26

Applicant: STMICROELECTRONICS S.R.L. ,  STMICROELECTRONICS, INC.

Inventor： Marco Bianco ,  Lorenzo Bracco ,  Mahesh Chowdhary ,  Roberto Mura ,  Stefano Paolo Rivolta ,  Federico Rizzardini

IPC: B25F5/00 ,  B23B45/00 ,  G01C19/00

Abstract: A device for generating a control signal based on the linear movement of a linear member is provided. The device includes a linear member, a rotatable member, a first inertial measurement unit (IMU) coupled to the rotatable member and a second IMU having a fixed position. The device also includes a processing circuit which uses sensing signals from the IMUS to determine an attitude of the first IMU referenced to the second IMU and generate a control signal based on the attitude.

公开(公告)号：US20220246723A1

公开(公告)日：2022-08-04

申请号：US17579474

申请日：2022-01-19

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe SAGGIO ,  Alessia Maria FRAZZETTO ,  Edoardo ZANETTI ,  Alfio GUARNERA

IPC: H01L29/08 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.

公开(公告)号：US20220219544A1

公开(公告)日：2022-07-14

申请号：US17711543

申请日：2022-04-01

Applicant: STMicroelectronics S.r.l.

Inventor： Orazio Pennisi ,  Valerio Bendotti ,  Vittorio D'Angelo ,  Paolo Turbanti

IPC: B60L3/00 ,  B60L50/60 ,  B60L58/20 ,  H02J7/00

Abstract: A method can be used to control a battery management system. A first voltage drop is sensed between a first terminal of a first battery cell and a second terminal of the first battery cell and a second voltage drop is sensed between a first terminal of a second battery cell and a second terminal of the second battery cell. A faulty condition is detected in the first battery cell or the second battery cell based on the first voltage drop or the second voltage drop. The first voltage drop is swapped for a first swapped voltage drop between a common terminal and the second terminal of the second battery cell.

公开(公告)号：US11387924B2

公开(公告)日：2022-07-12

申请号：US16858255

申请日：2020-04-24

Applicant: STMicroelectronics S.r.l.

Inventor： Gabriele Dell'Amico ,  Eleonora Guerrini ,  Athos Marcon ,  Francesco Balducci

IPC: H04B17/336 ,  H04B17/354 ,  H04B17/391

Abstract: Noise in a communication channel is estimated by, in the absence of transmitted information packets, obtaining a plurality of sets of signal samples, and estimating noise power levels associated with the sets of signal samples and allotted to respective noise power classes. In the presence of at least one transmitted information packet, an information packet power level is estimated. A set of signal-to-noise ratios computed between the information packet power level and the noise power levels in the respective noise power classes are compared against a signal-to-noise threshold and partitioned into a first subset and a second subset of signal-to-noise ratios failing to exceed/exceeding, respectively, the threshold. One or more resulting impulsive noise parameters are computed as a function of impulsive noise parameters indicative of noise power levels in the signal-to-noise ratios in the first subset while disregarding impulsive noise parameters indicative of noise power levels in the second subset.

公开(公告)号：US11387625B2

公开(公告)日：2022-07-12

申请号：US16455063

申请日：2019-06-27

Applicant: STMicroelectronics S.r.l. ,  Politecnico Di Milano

Inventor： Marco Zamprogno ,  Alireza Tajfar

IPC: H01S5/042 ,  G02B26/08 ,  G02B26/10 ,  H01S5/062 ,  H05B45/30 ,  H05B45/325 ,  H03K5/26

Abstract: A pulsed signal generator generates a pulsed signal having a pulse width intended to be equal to a given fraction of a pulse width of a reference clock. A reference current source outputs current having a reference magnitude, and a comparison current source outputs current having a magnitude that is a function of the reference magnitude and the given fraction. A comparison circuit compares a total current output by one of the reference current source and the comparison current source during pulses of the reference clock to a total current output by the other of the reference current source and the comparison current source during pulses of the pulsed signal equal in number to the pulses of the reference clock in order to determine whether the pulse width of the pulse signal is less than or equal to the given fraction of the pulse width of the reference clock.

公开(公告)号：US20220216333A1

公开(公告)日：2022-07-07

申请号：US17703779

申请日：2022-03-24

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando IUCOLANO

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: An HEMT includes: a heterostructure; a dielectric layer on the heterostructure; a gate electrode, which extends throughout the thickness of the dielectric layer; a source electrode; and a drain electrode. The dielectric layer extends between the gate electrode and the drain electrode and is absent between the gate electrode and the source electrode. In this way, the distance between the gate electrode and the source electrode can be designed in the absence of constraints due to a field plate that extends towards the source electrode.

公开(公告)号：US20220208961A1

公开(公告)日：2022-06-30

申请号：US17559859

申请日：2021-12-22

Applicant: STMicroelectronics S.r.l.

Inventor： Patrick FIORENZA ,  Fabrizio ROCCAFORTE ,  Edoardo ZANETTI ,  Mario Giuseppe SAGGIO

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/66

Abstract: A MOSFET transistor device includes a functional layer of silicon carbide, having a first conductivity type. Gate structures are formed on a top surface of the functional layer and each includes a dielectric region and an electrode region. Body wells having a second conductivity type are formed within the functional layer, and the body wells are separated from one another by surface-separation regions. Source regions having the first conductivity type are formed within the body wells, laterally and partially underneath respective gate structures. Modified-doping regions are arranged in the surface-separation regions centrally thereto, underneath respective gate structures, in particular underneath the corresponding dielectric regions, and have a modified concentration of dopant as compared to the concentration of the functional layer.

公开(公告)号：US20220205784A1

公开(公告)日：2022-06-30

申请号：US17700275

申请日：2022-03-21

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Gabriele Gattere ,  Carlo Valzasina ,  Luca Giuseppe Falorni

IPC: G01C19/5747 ,  G01C19/5712 ,  H01G5/011 ,  G01C25/00 ,  B81C1/00

Abstract: A multi-axis MEMS gyroscope includes a micromechanical detection structure having a substrate, a driving-mass arrangement, a driven-mass arrangement with a central window, and a sensing-mass arrangement which undergoes sensing movements in the presence of angular velocities about a first horizontal axis and a second horizontal axis. A sensing-electrode arrangement is fixed with respect to the substrate and is set underneath the sensing-mass arrangement. An anchorage assembly is set within the central window for constraining the driven-mass arrangement to the substrate at anchorage elements. The anchorage assembly includes a rigid structure suspended above the substrate that is elastically coupled to the driven mass by elastic connection elements at a central portion, and is coupled to the anchorage elements by elastic decoupling elements at end portions thereof.

公开(公告)号：US20220199500A1

公开(公告)日：2022-06-23

申请号：US17550925

申请日：2021-12-14

Applicant: STMicroelectronics S.r.l.

Inventor： Mauro MAZZOLA ,  Roberto TIZIANI

IPC: H01L23/495 ,  H01L21/48

Abstract: A leadframe includes a pattern of electrically-conductive formations with one or more sacrificial connection formations extending bridge-like between a pair of electrically-conductive formations. The sacrificial connection formation or formations are formed at one of the first surface and the second surface of the leadframe and have a thickness less than the leadframe thickness between the first surface and the second surface. A filling of electrically-insulating material is molded between the electrically-conductive formations of the leadframe, with electrically-insulating material molded between the connection formation(s) and the other surface of the leadframe. The sacrificial connection formation(s) counter deformation and displacement of parts during formation and pre-molding of the leadframe.