中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

337 records (took 0.02 seconds)

    DEVICE FORMED HARD MASK AND ETCH STOP LAYER
    301.
    发明申请
    DEVICE FORMED HARD MASK AND ETCH STOP LAYER 有权
    设备形成硬掩模和蚀刻停止层

    公开(公告)号：US20110254020A1

    公开(公告)日：2011-10-20

    申请号：US13171112

    申请日：2011-06-28

    Applicant: Gary Yama

    Inventor： Gary Yama

    IPC: H01L29/161 ,  H01L21/20

    CPC classification number: B81C1/00595 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/0475

    Abstract: A method of etching a device in one embodiment includes providing a silicon carbide substrate, forming a silicon nitride layer on a surface of the silicon carbide substrate, forming a silicon carbide layer on a surface of the silicon nitride layer, forming a silicon dioxide layer on a surface of the silicon carbide layer, forming a photoresist mask on a surface of the silicon dioxide layer, and etching the silicon dioxide layer through the photoresist mask.

    Abstract translation: 在一个实施例中蚀刻器件的方法包括提供碳化硅衬底，在碳化硅衬底的表面上形成氮化硅层，在氮化硅层的表面上形成碳化硅层，在二氧化硅层上形成二氧化硅层 碳化硅层的表面，在二氧化硅层的表面上形成光致抗蚀剂掩模，并且通过光致抗蚀剂掩模蚀刻二氧化硅层。

    Heterogeneous substrate including a sacrificial layer, and a method of fabricating it
    302.
    发明授权
    Heterogeneous substrate including a sacrificial layer, and a method of fabricating it 有权
    包括牺牲层的非均相基板及其制造方法

    公开(公告)号：US07993949B2

    公开(公告)日：2011-08-09

    申请号：US12488854

    申请日：2009-06-22

    Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

    Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

    IPC: H01L21/02

    CPC classification number: B81C1/00595 ,  B81B2201/0271 ,  B81C2201/0109 ,  B81C2201/014

    Abstract: The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.

    Abstract translation: 本发明涉及一种从包含至少一种单晶材料中的第一和第二部分的异质衬底制备组分的方法，以及由位于两层单晶之间的至少一层单晶硅的至少一个叠层构成的牺牲层 SiGe，堆叠设置在单晶材料的第一和第二部分之间，其中该方法包括通过以下步骤蚀刻所述堆叠：e）在第一和/或第二部分中的至少一个开口，以及第一和/ SiGe，以达到Si层; 和f）消除Si的全部或部分层。

    Method of Etching a device using a hard mask and etch stop layer
    304.
    发明申请
    Method of Etching a device using a hard mask and etch stop layer 有权
    使用硬掩模和蚀刻停止层蚀刻器件的方法

    公开(公告)号：US20090166330A1

    公开(公告)日：2009-07-02

    申请号：US12006377

    申请日：2007-12-31

    Applicant: Gary Yama

    Inventor： Gary Yama

    IPC: H01L21/308

    CPC classification number: B81C1/00595 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/0475

    Abstract: A method of etching a device in one embodiment includes providing a silicon carbide substrate, forming a silicon nitride layer on a surface of the silicon carbide substrate, forming a silicon carbide layer on a surface of the silicon nitride layer, forming a silicon dioxide layer on a surface of the silicon carbide layer, forming a photoresist mask on a surface of the silicon dioxide layer, and etching the silicon dioxide layer through the photoresist mask.

    Abstract translation: 在一个实施例中蚀刻器件的方法包括提供碳化硅衬底，在碳化硅衬底的表面上形成氮化硅层，在氮化硅层的表面上形成碳化硅层，在二氧化硅层上形成二氧化硅层 碳化硅层的表面，在二氧化硅层的表面上形成光致抗蚀剂掩模，并且通过光致抗蚀剂掩模蚀刻二氧化硅层。

    Aluminum fluoride films for microelectromechanical system applications
    305.
    发明授权
    Aluminum fluoride films for microelectromechanical system applications 失效
    用于微机电系统应用的氟化铝膜

    公开(公告)号：US07535621B2

    公开(公告)日：2009-05-19

    申请号：US11646059

    申请日：2006-12-27

    Applicant: Chih-Wei Chiang

    Inventor： Chih-Wei Chiang

    IPC: G02B26/00 ,  H01L29/00 ,  H01L21/00

    CPC classification number: G02B26/001 ,  B81B2201/047 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/112

    Abstract: A microelectromechanical systems (MEMS) device utilizing an aluminum fluoride layer as an etch stop is disclosed. In one embodiment, a MEMS device includes a first electrode having a first surface; and a second electrode having a second surface facing the first surface and defining a gap therebetween. The second electrode is movable in the gap between a first position and a second position. At least one of the electrodes includes an aluminum fluoride layer facing the other of the electrodes. During fabrication of the MEMS device, a sacrificial layer is formed between the first and second electrodes and is released to define the gap. The aluminum fluoride layer serves as an etch stop to protect the first or second electrode during the release of the sacrificial layer.

    Abstract translation: 公开了一种利用氟化铝层作为蚀刻阻挡层的微机电系统（MEMS）装置。 在一个实施例中，MEMS器件包括具有第一表面的第一电极; 以及第二电极，其具有面向所述第一表面的第二表面并且在其间限定间隙。 第二电极可以在第一位置和第二位置之间的间隙中移动。 至少一个电极包括面对另一个电极的氟化铝层。 在MEMS器件的制造期间，在第一和第二电极之间形成牺牲层并被释放以限定间隙。 氟化铝层用作蚀刻停止件，以在释放牺牲层期间保护第一或第二电极。

    METHOD OF PRODUCING A SUSPENDED MEMBRANE DEVICE
    306.
    发明申请
    METHOD OF PRODUCING A SUSPENDED MEMBRANE DEVICE 有权
    制造悬挂膜装置的方法

    公开(公告)号：US20090124035A1

    公开(公告)日：2009-05-14

    申请号：US12265256

    申请日：2008-11-05

    Applicant: Patrice Rey ,  Mouna Salhi

    Inventor： Patrice Rey ,  Mouna Salhi

    IPC: H01L21/00

    CPC classification number: B81C1/00158 ,  B81C2201/014

    Abstract: A method for producing a device with at least one suspended membrane, comprising at least the following steps: producing a trench through a first sacrificial layer and a second layer deposited on the first sacrificial layer, the trench completely surrounding at least a portion of the first sacrificial layer and at least a portion of the second layer, filling all or a portion of the trench with at least one material capable of resisting at least one etching agent, etching said portion of the first sacrificial layer with said etching agent through at least one opening made in the second layer, said portion of the second layer forming at least one portion of the suspended membrane.

    Abstract translation: 一种用于制造具有至少一个悬浮膜的装置的方法，至少包括以下步骤：通过第一牺牲层和沉积在第一牺牲层上的第二层产生沟槽，所述沟槽完全围绕第一牺牲层的至少一部分 牺牲层和第二层的至少一部分，用至少一种能够抵抗至少一种蚀刻剂的材料填充沟槽的全部或一部分，用所述蚀刻剂通过至少一个蚀刻剂蚀刻所述第一牺牲层的所述部分 所述第二层的所述部分形成所述悬浮膜的至少一部分。

    MEMS devices with an etch stop layer
    307.
    发明申请
    MEMS devices with an etch stop layer 失效
    具有蚀刻停止层的MEMS器件

    公开(公告)号：US20080218844A1

    公开(公告)日：2008-09-11

    申请号：US12009389

    申请日：2008-01-17

    Applicant: Fusao Ishii

    Inventor： Fusao Ishii

    IPC: G02B26/00 ,  H01L21/00

    CPC classification number: G02B26/0841 ,  B81B2201/047 ,  B81B2203/0181 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2203/0735 ,  B81C2203/0771

    Abstract: This invention discloses a MEMS device supported on a substrate formed with electric circuit thereon. The MEMS device includes at least an electrode connected to the circuit and at least a movable element that is controlled by the electrode. The MEMS device further includes a conformal protective layer over the electrode and the circuit wherein the protective layer is semiconductor-based material. In a preferred embodiment, the MEMS device is a micromirror and the semiconductor material is one of a group of materials consisting of Si, SiC, Ge, SiGe, SiNi and SiW.

    Abstract translation: 本发明公开了一种在其上形成有电路的基板上支撑的MEMS器件。 MEMS器件至少包括连接到电路的电极和至少一个由电极控制的可移动元件。 MEMS器件还包括电极和电路上的共形保护层，其中保护层是基于半导体的材料。 在优选实施例中，MEMS器件是微镜，并且半导体材料是由Si，SiC，Ge，SiGe，SiNi和SiW组成的一组材料之一。

    Physical quantity sensor
    310.
    发明授权
    Physical quantity sensor 有权
    物理量传感器

    公开(公告)号：US07271459B2

    公开(公告)日：2007-09-18

    申请号：US11169583

    申请日：2005-06-30

    Applicant: Makoto Asai

    Inventor： Makoto Asai

    IPC: H01L29/84

    CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C2201/014 ,  B81C2201/019 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    Abstract: A physical quantity sensor includes: a semiconductor substrate; a cavity disposed in the substrate and extending in a horizontal direction of the substrate; a groove disposed on the substrate and reaching the cavity; a movable portion separated by the cavity and the groove so that the movable portion is movably supported on the substrate; and an insulation layer disposed on a bottom of the movable portion so that the insulation layer provides a roof of the cavity.

    Abstract translation: 物理量传感器包括：半导体衬底; 设置在所述基板中并在所述基板的水平方向上延伸的空腔; 设置在所述基板上并到达所述空腔的凹槽; 可移动部分，由空腔和沟槽分隔开，使得可移动部分可移动地支撑在基板上; 以及设置在所述可动部分的底部上的绝缘层，使得所述绝缘层提供所述空腔的顶部。

Patent Agency Ranking