TRIGGERING FLOW ANALYSIS AT INTERMEDIARY DEVICES
    354.
    发明申请
    TRIGGERING FLOW ANALYSIS AT INTERMEDIARY DEVICES 有权
    中间装置的触发流分析

    公开(公告)号:US20080175162A1

    公开(公告)日:2008-07-24

    申请号:US11626819

    申请日:2007-01-24

    Abstract: In one embodiment, a router examines an incoming packet for a flow monitoring request. The router may examine every packet for the flow monitoring request, or preferably may only examine packets including a lifetime value indicating that the packet should be dropped and not forwarded or may only examine packets having a predetermined message format. When the flow monitoring request is included, the router performs detailed flow analysis or other monitoring according to the flow monitoring request.

    Abstract translation: 在一个实施例中,路由器检查用于流量监视请求的传入分组。 路由器可以检查流量监视请求的每个分组,或者优选地仅检查包括指示分组应该被丢弃并且不被转发的生存期值的分组,或者可以仅检查具有预定消息格式的分组。 当流量监控请求被包含时,路由器根据流量监控请求进行详细的流量分析或其他监控。

    Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove
    358.
    发明授权
    Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove 有权
    具有与每个第一凹槽的底部上的栅极区域欧姆接触的金属导体的半导体器件

    公开(公告)号:US07335928B2

    公开(公告)日:2008-02-26

    申请号:US11802810

    申请日:2007-05-25

    CPC classification number: H01L29/66416 H01L29/1608 H01L29/7722 H01L29/8083

    Abstract: A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

    Abstract translation: 提供诸如JFET,SIT等的碳化硅半导体器件用于实现导通电阻和高速开关操作的降低。 在JFET或SIT中,形成在沿着沟槽形成的栅极区之间的沟道中延伸的耗尽层的电流,可以从外部供应电压的栅极接触层和栅极电极 在半导体衬底的一个表面上或在沟槽槽的底部。 金属导体(虚拟栅电极)与沟槽沟槽底部的栅极区域的p ++接触层独立于栅电极形成欧姆接触。 虚拟栅电极与栅极电极和外部电线电隔离。

    Interworking of packet-based voice technologies using virtual TDM trunks
    359.
    发明授权
    Interworking of packet-based voice technologies using virtual TDM trunks 有权
    使用虚拟TDM干线进行基于分组的语音技术的互通

    公开(公告)号:US07283533B1

    公开(公告)日:2007-10-16

    申请号:US09892117

    申请日:2001-06-25

    CPC classification number: H04L12/66 H04L65/1033 H04M7/006 H04M7/124

    Abstract: A method for directly converting packet-based voice data of two non-compatible formats, (e.g., VoIP and VOATM), is described. A VoIP call agent sets a connection between a VoIP edge gateway and an interworking unit (IWU). The IWU allows the VoATM network to appear as a TDM network to the VoIP call agent. The VoIP call agent selects a virtual trunk group and channel identification code through the interworking unit and transmits the selection to a VoATM call agent. The IWU allows the VoIP network to appear as a TDM network to the VoATM call agent such that the VoATM call agent establishes a connection between the virtual trunk group and a VoATM network device. The IWU allows the VoATM network to appear as a TDM network to the VoIP call agent such that the VoIP call agent establishes a connection between the virtual trunk group and a VoIP network device.

    Abstract translation: 描述了用于直接转换两种不兼容格式(例如,VoIP和VOATM)的基于分组的语音数据的方法。 VoIP呼叫代理设置VoIP边缘网关和互通单元(IWU)之间的连接。 IWU允许VoATM网络显示为VoIP呼叫代理的TDM网络。 VoIP呼叫代理通过互通单元选择虚拟中继线群和信道识别码,并将选择发送到VoATM呼叫代理。 IWU允许VoIP网络作为TDM网络显示给VoATM呼叫代理,使得VoATM呼叫代理建立虚拟中继组与VoATM网络设备之间的连接。 IWU允许VoATM网络显示为VoIP呼叫代理的TDM网络,使得VoIP呼叫代理建立虚拟中继组与VoIP网络设备之间的连接。

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