公开(公告)号：US5619097A

公开(公告)日：1997-04-08

申请号：US461498

申请日：1995-06-05

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: G02B27/22 ,  G09G3/00 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/24 ,  H01J29/02 ,  H01J29/82 ,  H01J29/87 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H01J63/04

CPC classification number: H01J31/127 ,  G02B27/2235 ,  G09G3/001 ,  H01J29/028 ,  H01J29/82 ,  H01J29/94 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H04N5/70 ,  H04N5/7491

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract translation: 垂直场致发射体结构和场致发射器件，例如利用这种结构的平板显示器。 描述了自对准栅极和发射极制造以及虚拟列场发射器结构，其包括发射极或门控发射极，导电柱将发射极连接到通过下层的部分的化学或其它修饰而形成的下伏电阻或导体结构。 本发明的显示器利用具有低匝数和高加速电压的场发射结构，从而可以实现高亮度，小像素尺寸，低制造成本，均匀亮度和高能量效率。

公开(公告)号：US5594298A

公开(公告)日：1997-01-14

申请号：US312643

申请日：1994-09-27

Applicant: Shigeo Itoh ,  Teruo Watanabe ,  Takahiro Niiyama

Inventor： Shigeo Itoh ,  Teruo Watanabe ,  Takahiro Niiyama

IPC: H01J1/30 ,  H01J1/304

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field emission cathode device capable of permitting when short-circuiting occurs between any of emitters and a gate, a block in which the block is formed to be separated from the remaining blocks and preventing a material fused at the time of the short-circuiting from scattering. A cathode conductor arranged on a substrate is formed with a plurality of cutouts, in which resistive layers are arranged. The resistive layers each are provided with terminals through which the resistive layer is connected to the cathode conductor. An insulating layer is arranged so as to cover the resistive layers and cathode conductor and a plurality of emitters are formed on each of the resistive layers. A gate conductor is formed on the insulating layer so as to be positioned around a distal end of each of the conical emitters. Short-circuiting between any of the emitters and the gate conductor causes the terminals to be fused. The insulating layer prevents the fused material from scattering.

Abstract translation: 一种场致发射阴极装置，其能够在任何发光体和栅极之间发生短路，其中块形成为与剩余块分离，并防止在短路时融合的材料 散射。 布置在基板上的阴极导体形成有多个切口，其中布置有电阻层。 电阻层各自设置有端子，电阻层通过该端子连接到阴极导体。 布置绝缘层以覆盖电阻层和阴极导体，并且在每个电阻层上形成多个发射极。 在绝缘层上形成栅极导体，以便围绕每个锥形发射器的远端定位。 任何发射器和栅极导体之间​​的短路导致端子熔断。 绝缘层防止熔融材料飞散。

公开(公告)号：US5587628A

公开(公告)日：1996-12-24

申请号：US426357

申请日：1995-04-21

Applicant: Huei-Pei Kuo

Inventor： Huei-Pei Kuo

IPC: H01J31/12 ,  H01J3/02 ,  H01J29/04 ,  G09G3/00

CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A field emission device including a substrate, an emitter layer, a spacer layer and a gate layer. In one preferred embodiment, the emitter layer is made of a resistive material, and has a side end that has an edge. The spacer layer is on and over only a portion of the emitter layer to expose the edge. The gate layer, on the spacer layer, also has a side end that is tapered to form a wedge with an edge. In one application, the device is used in a flat panel display, with a screen. The screen is at a selected positive voltage and is positioned above the gate layer. When a selected potential difference is applied between the emitter layer and the gate layer, an electron-extraction field is established between the edge of the gate layer and the edge of the emitter layer to extract electrons from the edge of the emitter layer. Then, the electrons are attracted to the screen. The wedge reduces the amount of electrons collected at the gate and increases the efficiency of the device. The resistive nature of the emitter layer enhances the uniformity of the electrons emitted along the edge of the emitter layer.

Abstract translation: 一种场发射器件，包括衬底，发射极层，间隔层和栅极层。 在一个优选实施例中，发射极层由电阻材料制成，并具有具有边缘的侧端。 间隔层仅在发射极层的一部分上并暴露出边缘。 间隔层上的栅极层也具有锥形的侧端，以形成具有边缘的楔形物。 在一个应用中，该设备用于具有屏幕的平板显示器中。 屏幕处于选定的正电压并且位于栅极层上方。 当在发射极层和栅极层之间施加选择的电位差时，在栅极层的边缘和发射极层的边缘之间建立电子提取场，以从发射极层的边缘提取电子。 然后，电子被吸引到屏幕上。 楔形物减少了在栅极处收集的电子的量，并提高了器件的效率。 发射极层的电阻性质增强沿发射极层边缘发射的电子的均匀性。

公开(公告)号：US5587623A

公开(公告)日：1996-12-24

申请号：US627922

申请日：1996-04-03

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: G02B27/22 ,  G09G3/00 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/24 ,  H01J29/02 ,  H01J29/82 ,  H01J29/87 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H01J19/24

CPC classification number: H01J31/127 ,  G02B27/2235 ,  G09G3/001 ,  H01J29/028 ,  H01J29/82 ,  H01J29/94 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H04N5/70 ,  H04N5/7491

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract translation: 垂直场致发射体结构和场致发射器件，例如利用这种结构的平板显示器。 描述了自对准栅极和发射极制造以及虚拟列场发射器结构，其包括发射极或门控发射极，导电柱将发射极连接到通过下层的部分的化学或其它修饰而形成的下伏电阻或导体结构。 本发明的显示器利用具有低匝数和高加速电压的场发射结构，从而可以实现高亮度，小像素尺寸，低制造成本，均匀亮度和高能量效率。

公开(公告)号：US5584740A

公开(公告)日：1996-12-17

申请号：US321642

申请日：1994-10-11

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Abstract translation: 薄膜边缘场发射器装置包括具有第一部分并且具有从第一部分延伸的突起的基底，突起限定至少一个侧壁，侧壁构成第二部分。 发射极层设置在包括第二部分的衬底上，发射极层选自半导体和导体，并且是包括延伸超过第二部分并限定暴露的发射极边缘的部分的薄膜。 一对支撑层设置在发射极层的相对侧上，该对支撑层各自选自由半导体和导体组成的组，并且每个具有比发射极层更高的功函数。

公开(公告)号：US4940916B1

公开(公告)日：1996-11-26

申请号：US26668188

申请日：1988-11-03

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： BOREL MICHEL ,  BORONAT JEAN-FRANCOIS ,  MEYER ROBERT ,  RAMBAUD PHILIPPE

IPC: H01J29/04 ,  H01J1/304 ,  H01J31/12 ,  H01J1/30 ,  H01J1/90

CPC classification number: H01J1/3042 ,  H01J2201/319

公开(公告)号：US5557160A

公开(公告)日：1996-09-17

申请号：US365570

申请日：1994-12-28

Applicant: Hideo Makishima ,  Akihiko Okamoto

Inventor： Hideo Makishima ,  Akihiko Okamoto

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J17/06

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A high resistance epitaxial layer is formed on a substrate, and a resistance layer is formed for each emitter by injecting ions into the high resistance epitaxial layer via an aperture formed through a gate electrode. An emitter is provided on the resistance layer. Alternatively, ions are injected into a semiconductor substrate of a first conductivity type to provide a region of a second conductivity type opposite to the first conductivity type in the semiconductor substrate by using a gate electrode having an aperture as a mask. An emitter is provided on the region of the semiconductor substrate.

Abstract translation: 在基板上形成高电阻外延层，并且通过经由栅电极形成的孔将离子注入高电阻外延层，为每个发射极形成电阻层。 发射极设置在电阻层上。 或者，通过使用具有孔径的栅电极作为掩模，将离子注入到第一导电类型的半导体衬底中以提供与半导体衬底中的第一导电类型相反的第二导电类型的区域。 在半导体衬底的区域上设置发射极。

公开(公告)号：US5551903A

公开(公告)日：1996-09-03

申请号：US326302

申请日：1994-10-19

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J29/08 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer disposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the flat surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 在电阻柱的平坦表面附近设置一层金刚石。

公开(公告)号：US5550426A

公开(公告)日：1996-08-27

申请号：US268748

申请日：1994-06-30

Applicant: Robert T. Smith ,  Scott K. Ageno

Inventor： Robert T. Smith ,  Scott K. Ageno

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: An FED (10) utilizes a semiconductor junction to control the current flow (32) through an emission tip of the FED (10). The semiconductor junction is created between a conductive layer (12) and a doped semiconductor layer (14). The conductive layer (12) can be a metal or another doped semiconductor layer in order to form the semiconductor junction.

Abstract translation: FED（10）利用半导体结来控制通过FED（10）的发射端的电流（32）。 在导电层（12）和掺杂半导体层（14）之间产生半导体结。 为了形成半导体结，导电层（12）可以是金属或另一掺杂半导体层。

公开(公告)号：US5530262A

公开(公告)日：1996-06-25

申请号：US541763

申请日：1995-05-25

Applicant: John E. Cronin ,  Kent E. Morrett ,  Michael D. Potter ,  Matthew J. Rutten

Inventor： John E. Cronin ,  Kent E. Morrett ,  Michael D. Potter ,  Matthew J. Rutten

IPC: H01J9/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/06

CPC classification number: H01L27/10852 ,  H01J9/025 ,  H01L27/108 ,  H01J2201/319

Abstract: Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.

Abstract translation: 描述了双向场致发射器件（FED）和相关的制造方法。 基本装置包括第一单一场发射结构和相邻定位的第二单一场致发射结构。 第一单一结构具有第一阴极部分和第一阳极部分，而第二整体结构具有第二阴极部分和第二阳极部分。 结构被定位成使得第一阴极部分与第二阳极部分相对，使得电子可以通过场发射流动，并且第二阴极部分与第一阳极部分相反，使得电子可以通过场发射而流动。 控制机构定义设备是否有效，而施加到第一和第二单一结构的偏置电压限定电流的方向。 存在这种双向FED的多种应用。 例如，讨论了FED DRAM单元，以及用于制造各种器件的方法。