公开(公告)号：US07987814B2

公开(公告)日：2011-08-02

申请号：US12099007

申请日：2008-04-07

申请人： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

发明人： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

IPC分类号： C23C16/452 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

摘要翻译： 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

公开(公告)号：US20100096109A1

公开(公告)日：2010-04-22

申请号：US12253657

申请日：2008-10-17

申请人： CHUNLEI ZHANG ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

发明人： CHUNLEI ZHANG ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

IPC分类号： F28D15/00 ,  B01J19/08

CPC分类号： H05B7/18 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069

摘要： Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

摘要翻译： 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。

公开(公告)号：US20130008604A1

公开(公告)日：2013-01-10

申请号：US13613941

申请日：2012-09-13

申请人： KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

发明人： KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

IPC分类号： H01L21/306

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

公开(公告)号：US20120325406A1

公开(公告)日：2012-12-27

申请号：US13607425

申请日：2012-09-07

申请人： James D. CARDUCCI ,  Andrew NGUYEN ,  Ajit BALAKRISHNA ,  Michael C. KUTNEY

发明人： James D. CARDUCCI ,  Andrew NGUYEN ,  Ajit BALAKRISHNA ,  Michael C. KUTNEY

IPC分类号： B32B1/04 ,  H05H1/24 ,  B44C1/22

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

摘要翻译： 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

公开(公告)号：US08282736B2

公开(公告)日：2012-10-09

申请号：US13401572

申请日：2012-02-21

申请人： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

发明人： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

摘要翻译： 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

公开(公告)号：US20110151590A1

公开(公告)日：2011-06-23

申请号：US12846664

申请日：2010-07-29

申请人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

发明人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

IPC分类号： H01L21/00 ,  C23C16/50 ,  H01L21/465

CPC分类号： H01L21/3105 ,  H01L21/31058 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

摘要： A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.

摘要翻译： 一种用于通过蚀刻和/或条带处理损坏的低k电介质薄膜的真正真正修复的方法，系统和计算机可读介质。 修复室与等离子体蚀刻和/或剥离室集成在相同的平台上，以修复低k电介质薄膜，而不破坏损坏事件和修复事件之间的真空。 紫外线辐射可以在低k修复处理之前，之后或期间以任何组合提供在集成蚀刻/修复平台上，以增加修复处理的效力和/或修复的稳定性。

公开(公告)号：US07879183B2

公开(公告)日：2011-02-01

申请号：US12038499

申请日：2008-02-27

申请人： Imad Yousif ,  Ying Rui ,  Nancy Fung ,  Martin Jeffrey Salinas ,  Ajit Balakrishna ,  Anchel Sheyner ,  Shahid Rauf ,  Walter R. Merry

发明人： Imad Yousif ,  Ying Rui ,  Nancy Fung ,  Martin Jeffrey Salinas ,  Ajit Balakrishna ,  Anchel Sheyner ,  Shahid Rauf ,  Walter R. Merry

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23C16/455

CPC分类号： H01L21/6708 ,  B05B1/18

摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.

摘要翻译： 本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。 本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。 喷头包括构造成设置在基板的前侧上的主体。 主体具有配置为面向基板的前侧的工艺表面。 处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。 第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。 没有气体输送孔分布在中间区域的大部分内。

公开(公告)号：US20090250169A1

公开(公告)日：2009-10-08

申请号：US12099007

申请日：2008-04-07

申请人： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

发明人： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

摘要翻译： 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

公开(公告)号：US20090214798A1

公开(公告)日：2009-08-27

申请号：US12038499

申请日：2008-02-27

申请人： IMAD YOUSIF ,  Ying Rui ,  Nancy Fung ,  Martin Jeffrey Salinas ,  Ajit Balakrishna ,  Anchel Sheyner ,  Shahid Rauf ,  Walter R. Merry

发明人： IMAD YOUSIF ,  Ying Rui ,  Nancy Fung ,  Martin Jeffrey Salinas ,  Ajit Balakrishna ,  Anchel Sheyner ,  Shahid Rauf ,  Walter R. Merry

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/67 ,  B05B1/14

CPC分类号： H01L21/6708 ,  B05B1/18

摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.

摘要翻译： 本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。 本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。 喷头包括构造成设置在基板的前侧上的主体。 主体具有配置为面向基板的前侧的工艺表面。 处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。 第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。 没有气体输送孔分布在中间区域的大部分内。

公开(公告)号：US07552736B2

公开(公告)日：2009-06-30

申请号：US11685775

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。