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    Plasma etching process
    31.
    发明授权
    Plasma etching process 有权
    等离子体蚀刻工艺

    公开(公告)号：US09378970B2

    公开(公告)日：2016-06-28

    申请号：US14610490

    申请日：2015-01-30

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  CNRS Centre National de la Recherche Scientifique

    发明人： Olivier Joubert ,  Gilles Cunge ,  Emilie Despiau-Pujo ,  Erwine Pargon ,  Nicolas Posseme

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67

    CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

    摘要： A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.

    摘要翻译： 提供了一种用于在等离子体蚀刻反应器中蚀刻待蚀刻层的方法和系统，包括：通过注入至少一种反应性气体形成反应层以形成反应性气体等离子体，其与待蚀刻的层一起形成 ，在蚀刻所述蚀刻层期间进入待蚀刻层中的反应层，其中当所述注入的确定持续时间完成时，所述反应层达到稳定状态厚度; 所述注入在经过所述确定的持续时间之前中断，使得在反应层的形成完成时，反应层的厚度小于所述稳态厚度; 并且通过注入至少一种惰性气体来除去反应层以形成惰性气体等离子体，这使得仅可除去反应层。

    METHOD FOR FORMING SPACERS FOR A TRANSITOR GATE
    36.
    发明申请
    METHOD FOR FORMING SPACERS FOR A TRANSITOR GATE 审中-公开
    用于形成传送器门的间隔件的方法

    公开(公告)号：US20140187046A1

    公开(公告)日：2014-07-03

    申请号：US14142248

    申请日：2013-12-27

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  APPLIED MATERIALS, Inc. ,  CNRS Centre National de la Recherche Scientifique

    发明人： Nicolas POSSEME ,  Thibaut DAVID ,  Olivier JOUBERT ,  Torsten LILL ,  Srinivas NEMANI ,  Laurent VALLIER

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0234 ,  H01L21/0217 ,  H01L21/02321 ,  H01L21/02532 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L29/66628 ,  H01L29/66772

    摘要： The invention relates to a method for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, comprising a step of forming a layer of nitride covering the transistor gate, the method being characterized in that it comprises: after the step of forming the layer of nitride, at least one step of modifying the layer of nitride by implantation of light ions in the layer of nitride in order to form a modified layer of nitride, the step of modification being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate, the step of modifying the layer of nitride by implantation being performed using a plasma comprising the light ions; at least one step of removing the modified layer of nitride by means of a selective etching of the modified layer of nitride vis-à-vis said semiconductor material and vis-à-vis the non-modified layer of nitride

    摘要翻译： 本发明涉及一种用于形成场效应晶体管的栅极的间隔物的方法，栅极位于半导体材料层之上，包括形成覆盖晶体管栅极的氮化物层的步骤，该方法的特征在于它 包括：在形成氮化物层的步骤之后，通过在氮化层中注入轻离子来修饰氮化物层以形成氮化物层的至少一个步骤，修饰步骤如下进行： 在栅极的侧面不改变其整个厚度的氮化物层，通过使用包含轻离子的等离子体进行注入来修饰氮化物层的步骤; 至少一个步骤，通过相对于所述半导体材料选择性地蚀刻所述改性氮化物层并相对于所述非修饰氮化物层，去除所述修饰的氮化物层