公开(公告)号：US06869215B2

公开(公告)日：2005-03-22

申请号：US10447104

申请日：2003-05-29

Applicant: Yu-Sin Yang ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung Sam Jun ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Tae-Min Eom

Inventor： Yu-Sin Yang ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung Sam Jun ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Tae-Min Eom

IPC: H01L21/66 ,  G01N25/72 ,  G01K11/00

CPC classification number: G01N25/72

Abstract: A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.

Abstract translation: 一种用于通过加热或充电或两者退火和激活离子注入晶片并测量从活化晶片产生的热波吸收来检测离子注入晶片中的污染物的方法和装置。

公开(公告)号：US06803241B2

公开(公告)日：2004-10-12

申请号：US10338832

申请日：2003-01-09

Applicant: Tae-min Eom ,  Chung-sam Jun ,  Yu-sin Yang

Inventor： Tae-min Eom ,  Chung-sam Jun ,  Yu-sin Yang

IPC: H01L2166

CPC classification number: H01L22/12 ,  G01R31/303 ,  H01L21/76802 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of monitoring contact holes of an integrated circuit using corona charges is provided for determining whether the contact holes are open. The method includes transmitting corona charges over a unit chip having contact holes on a semiconductor wafer; measuring the surface voltage of the unit chip; making a graph illustrating a relationship between the amount of corona charges transmitted and the measured surface voltage of the unit chip; and analyzing the graph to determine whether the contact holes of the unit chip are open. According to the method of the present invention, contact holes may be monitored at an in-line state when manufacturing an integrated circuit by transmitting corona charges onto a unit chip, eliminating the need to use a scanning electronic microscope, thereby preventing a reduction in yield.

Abstract translation: 提供了使用电晕电荷监测集成电路的接触孔的方法，用于确定接触孔是否打开。 该方法包括在半导体晶片上具有接触孔的单元芯片上传送电晕电荷; 测量单元芯片的表面电压; 示出了发射的电晕电荷量与单位芯片的测量的表面电压之间的关系的曲线图; 并分析图形以确定单元芯片的接触孔是否打开。 根据本发明的方法，当通过将电晕电荷传输到单元芯片上制造集成电路时，可以以在线状态监视接触孔，从而不需要使用扫描电子显微镜，从而防止产量降低 。

公开(公告)号：US06449037B2

公开(公告)日：2002-09-10

申请号：US09864398

申请日：2001-05-25

Applicant: Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

Inventor： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC: G01N2100

CPC classification number: G01N21/21

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

Abstract translation: 方法和装置检测在晶片表面存在缺陷，即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。 特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

公开(公告)号：US08446583B2

公开(公告)日：2013-05-21

申请号：US12662650

申请日：2010-04-27

Applicant: Hyun-Jong Kim ,  Chung-Sam Jun ,  Hwan-Shik Park

Inventor： Hyun-Jong Kim ,  Chung-Sam Jun ,  Hwan-Shik Park

IPC: G01J4/00

CPC classification number: G01J3/02 ,  G01J3/0208 ,  G01J3/0224 ,  G01N21/211 ,  G01N2021/213 ,  G01N2021/214

Abstract: A light focusing unit and a spectrum measuring apparatus having the same are provided. The light focusing unit includes a light source section configured to emit light, a light guiding section configured to guide the light emitted from the light source section along multiple parallel light incidence paths, and a light focusing section configured to direct the light from the guiding section to be incident on a test position of a sample at different incidence angles.

Abstract translation: 提供了一种聚光单元和具有该聚光单元的光谱测量装置。 光聚焦单元包括被配置为发光的光源部分，被配置为沿着多个平行的光入射路径引导从光源部分发射的光的导光部分和被配置为引导来自引导部分的光的光聚焦部分 以不同的入射角入射到样品的测试位置。

公开(公告)号：US20100277729A1

公开(公告)日：2010-11-04

申请号：US12662650

申请日：2010-04-27

Applicant: Hyun-Jong Kim ,  Chung-Sam Jun ,  Hwan-Shik Park

Inventor： Hyun-Jong Kim ,  Chung-Sam Jun ,  Hwan-Shik Park

IPC: G01J3/447 ,  F21V13/02

CPC classification number: G01J3/02 ,  G01J3/0208 ,  G01J3/0224 ,  G01N21/211 ,  G01N2021/213 ,  G01N2021/214

Abstract: A light focusing unit and a spectrum measuring apparatus having the same are provided. The light focusing unit includes a light source section configured to emit light, a light guiding section configured to guide the light emitted from the light source section along multiple parallel light incidence paths, and a light focusing section configured to direct the light from the guiding section to be incident on a test position of a sample at different incidence angles.

Abstract translation: 提供了一种聚光单元和具有该聚光单元的光谱测量装置。 光聚焦单元包括被配置为发光的光源部分，被配置为沿着多个平行的光入射路径引导从光源部分发射的光的导光部分和被配置为引导来自引导部分的光的光聚焦部分 以不同的入射角入射到样品的测试位置。

公开(公告)号：US07728966B2

公开(公告)日：2010-06-01

申请号：US11423677

申请日：2006-06-12

Applicant: Jong-An Kim ,  Dong-Chun Lee ,  Chung-Sam Jun ,  Ik-Chul Kim ,  Sang-Hee Kim

Inventor： Jong-An Kim ,  Dong-Chun Lee ,  Chung-Sam Jun ,  Ik-Chul Kim ,  Sang-Hee Kim

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01N2021/8825

Abstract: An optical inspection tool used to detect surface defects of a substrate include a chuck for holding a substrate and a lens unit disposed over the chuck. The lens unit includes at least a pair of oblique beam paths therein, wherein light penetrating the beam paths travels without angular deflection. The beam paths take the form of spaces formed through the lens unit, or flat portions formed on a lens within the lens unit. A camera is installed on the lens unit, and the camera converts light passing through the lens unit into an image. Methods of detecting surface defects of the substrate using the inspection tool are also provided.

Abstract translation: 用于检测基板的表面缺陷的光学检查工具包括用于保持基板的卡盘和设置在卡盘上方的透镜单元。 透镜单元在其中包括至少一对倾斜光束路径，其中穿透光束路径的光行进而没有角度偏转。 光束路径采取通过透镜单元形成的空间的形式，或形成在透镜单元内的透镜上的平坦部分。 相机安装在镜头单元上，相机将通过镜头单元的光转换为图像。 还提供了使用检查工具检测基板的表面缺陷的方法。

公开(公告)号：US07697130B2

公开(公告)日：2010-04-13

申请号：US12368020

申请日：2009-02-09

Applicant: Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

Inventor： Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

IPC: G01N21/88 ,  G06F19/00

CPC classification number: G01N21/9501 ,  G01N2021/8858 ,  G01N2021/8861

Abstract: A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.

Abstract translation: 表面检查装置和方法提高晶片生产率，其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率，随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化 表示在连续获取的多个图像上。 当缺陷密度降低时，扫描速度增加，跳跃规则的水平增加，并且当缺陷密度增加时，扫描速度降低，并且跳过规则的水平降低以精确地检测缺陷，从而提高可靠性， 吞吐量和生产力。

公开(公告)号：US20090325326A1

公开(公告)日：2009-12-31

申请号：US12457873

申请日：2009-06-24

Applicant: Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

Inventor： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

IPC: H01L21/66 ,  G01J4/00

CPC classification number: G01N21/3563 ,  G01J3/447 ,  G01J4/00 ,  G01N21/9501 ,  H01L22/12

Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

Abstract translation: 通过层材料尺寸分析制造半导体器件的装置和方法提高了生产率。 该方法包括在半导体工艺装置中执行至少一个参考基板和至少一个目标基板的半导体制造工艺，检测参考基板的参考光谱和参考分布，确定所检测的参考光谱和参考光谱之间的关系函数 检测目标衬底的实时光谱，并且通过使用检测到的实时光谱作为确定的关系函数中的变量来实时确定在半导体处理装置中处理的目标衬底的实时曲线。

公开(公告)号：US07526959B2

公开(公告)日：2009-05-05

申请号：US11428804

申请日：2006-07-05

Applicant: Kwang-Soo Kim ,  Chung-Sam Jun

Inventor： Kwang-Soo Kim ,  Chung-Sam Jun

IPC: G01N29/04

CPC classification number: G01N29/48 ,  G01N29/043 ,  G01N29/223 ,  G01N2291/0421 ,  G01N2291/0422 ,  G01N2291/044 ,  G01N2291/056 ,  G01N2291/101

Abstract: A method of inspecting a substrate is provided comprising applying ultrasonic waves to a substrate, receiving echo pulse signals transmitted through the substrate, and analyzing received echo pulse signals to detect defects in the substrate. Thus, defects in the substrate may be detected.

Abstract translation: 提供一种检查基板的方法，包括向基板施加超声波，接收通过基板传输的回波脉冲信号，以及分析接收到的回波脉冲信号以检测基板中的缺陷。 因此，可以检测衬底中的缺陷。

公开(公告)号：US07486392B2

公开(公告)日：2009-02-03

申请号：US11476651

申请日：2006-06-29

Applicant: Yu-Sin Yang ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Tae-Sung Kim ,  Byung-Sug Lee

Inventor： Yu-Sin Yang ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Tae-Sung Kim ,  Byung-Sug Lee

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01N21/4738

Abstract: In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.

Abstract translation: 在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。 将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。 第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。 通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。 第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。 第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。 从对应于信号偏离部分的处理对象的一部分检测缺陷。