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    PHOTOVOLTAIC DEVICE
    31.
    发明申请
    PHOTOVOLTAIC DEVICE 有权
    光电器件

    公开(公告)号：US20130175648A1

    公开(公告)日：2013-07-11

    申请号：US13552594

    申请日：2012-07-18

    Applicant: Hyun-Jong Kim ,  Czang-Ho Lee ,  Min Park ,  Kyoung-Jin Seo ,  Sang-Won Lee ,  Jun-Ki Hong ,  Byoung-Gook Jeong

    Inventor： Hyun-Jong Kim ,  Czang-Ho Lee ,  Min Park ,  Kyoung-Jin Seo ,  Sang-Won Lee ,  Jun-Ki Hong ,  Byoung-Gook Jeong

    IPC: H01L31/0232 ,  H01L31/18

    CPC classification number: H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A photovoltaic device including a semiconductor substrate having a first surface and a second surface, the second surface being opposite to the first surface; a first passivation layer on the first surface; and a second passivation layer on the second surface, wherein each of the first passivation layer and the second passivation layer comprises an aluminum-based compound, is disclosed. A method of preparing a photovoltaic device, the method including: forming a semiconductor substrate to have a first surface and a second surface, the second surface being opposite to the first surface; forming an emitter region and a back surface field (BSF) region at the second surface; and forming a first passivation layer on the first surface and a second passivation layer on the second surface, wherein the first passivation layer and the second passivation layer are formed concurrently, is also disclosed.

    Abstract translation: 一种光电器件，包括具有第一表面和第二表面的半导体衬底，所述第二表面与所述第一表面相对; 第一表面上的第一钝化层; 以及在第二表面上的第二钝化层，其中第一钝化层和第二钝化层中的每一个包括铝基化合物。 一种制备光伏器件的方法，所述方法包括：形成具有第一表面和第二表面的半导体衬底，所述第二表面与所述第一表面相对; 在所述第二表面处形成发射极区域和后表面场（BSF）区域; 并且还公开了在第一表面上形成第一钝化层和第二表面上的第二钝化层，其中同时形成第一钝化层和第二钝化层。

    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    32.
    发明申请
    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    光伏器件及其制造方法

    公开(公告)号：US20130146136A1

    公开(公告)日：2013-06-13

    申请号：US13587393

    申请日：2012-08-16

    Applicant: Kyoung-Jin SEO ,  Jeong-Byong GOOK ,  Hyun-Jong KIM ,  Min PARK ,  Czang-Ho LEE ,  Sang-Won LEE

    Inventor： Kyoung-Jin SEO ,  Jeong-Byong GOOK ,  Hyun-Jong KIM ,  Min PARK ,  Czang-Ho LEE ,  Sang-Won LEE

    IPC: H01L31/0236 ,  H01L31/18

    CPC classification number: H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

    Abstract: A photovoltaic device and a method of manufacturing the same, the device including a semiconductor substrate having a first surface and a second surface opposite to the first surface; a silicon nitride gap insulation layer on the first surface of the semiconductor substrate, a portion of the gap insulation layer proximate to the semiconductor substrate having a silicon:nitrogen ratio different from a silicon:nitrogen ratio in a portion of the gap insulation layer distal to the semiconductor substrate; a semiconductor structure on the first surface of the semiconductor substrate; and an electrode on the semiconductor structure.

    Abstract translation: 一种光电器件及其制造方法，所述器件包括具有第一表面和与所述第一表面相对的第二表面的半导体衬底; 位于所述半导体衬底的第一表面上的氮化硅间隙绝缘层，所述间隙绝缘层靠近所述半导体衬底的部分具有不同于所述间隙绝缘层的部分中的硅：氮比的硅：氮比， 半导体衬底; 半导体衬底的第一表面上的半导体结构; 以及半导体结构上的电极。

    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE
    36.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE 有权
    薄膜晶体管基板，具有该基板的显示装置和制造显示装置的方法

    公开(公告)号：US20120003769A1

    公开(公告)日：2012-01-05

    申请号：US13233399

    申请日：2011-09-15

    Applicant: Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

    Inventor： Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

    IPC: H01L33/08

    CPC classification number: H01L29/7869 ,  H01L27/1225

    Abstract: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

    Abstract translation: 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。

    Thin film transistor substrate, display device having the same and method of manufacturing the display device
    37.
    发明授权
    Thin film transistor substrate, display device having the same and method of manufacturing the display device 有权
    薄膜晶体管基板，具有相同的显示装置和制造显示装置的方法

    公开(公告)号：US08035100B2

    公开(公告)日：2011-10-11

    申请号：US12197573

    申请日：2008-08-25

    Applicant: Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

    Inventor： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

    IPC: H01L29/12

    CPC classification number: H01L29/7869 ,  H01L27/1225

    Abstract: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

    Abstract translation: 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。

    THIN FILM TRANSITOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    38.
    发明申请
    THIN FILM TRANSITOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜传输器基板及其制造方法

    公开(公告)号：US20110183463A1

    公开(公告)日：2011-07-28

    申请号：US12961170

    申请日：2010-12-06

    Applicant: Sung-Ryul KIM ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Jae-Ho CHOI ,  Hwa-Yeul OH ,  Yong-Mo CHOI

    Inventor： Sung-Ryul KIM ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Jae-Ho CHOI ,  Hwa-Yeul OH ,  Yong-Mo CHOI

    IPC: H01L21/336

    CPC classification number: H01L29/78618 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/7869

    Abstract: A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

    Abstract translation: 制造薄膜晶体管（“TFT”）基板的方法包括在基板上形成包括栅电极的第一导电图案组，在第一导电图案组上形成栅极绝缘层，形成半导体层和欧姆接触层 通过图案化非晶硅层和氧化物半导体层，在栅极绝缘层上，通过图案化数据金属层，在欧姆接触层上形成包括源电极和漏电极的第二导电图案组，形成包括接触的保护层 并且在保护层的接触孔上形成像素电极。 还提供了包括由氧化物半导体形成的欧姆接触层的TFT基板。

    Method of manufacturing photoelectric device
    39.
    发明授权
    Method of manufacturing photoelectric device 失效
    制造光电器件的方法

    公开(公告)号：US07972883B2

    公开(公告)日：2011-07-05

    申请号：US12400674

    申请日：2009-03-09

    Applicant: Seung-Jae Jung ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Joon-Young Seo ,  Dong-Uk Choi ,  Byoung-Kyu Lee

    Inventor： Seung-Jae Jung ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Joon-Young Seo ,  Dong-Uk Choi ,  Byoung-Kyu Lee

    IPC: H01L21/00

    CPC classification number: H01L31/02366 ,  H01L31/022483 ,  H01L31/046 ,  H01L31/1888 ,  Y02E10/50 ,  Y10S438/964

    Abstract: In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.

    Abstract translation: 在制造光电器件的方法中，在衬底上形成透明导电层，并且使用包括氢氟酸的蚀刻溶液部分蚀刻透明导电层。 因此，形成在其表面具有凹凸图案的透明电极。 当透明导电层被部分蚀刻时，可以通过调节透明导电层的蚀刻时间来控制透明电极的雾度。 此外，由于将蚀刻溶液喷射到透明导电层以蚀刻透明导电层，所以即使基板的尺寸增加，也可以容易地形成透明电极表面上的凹凸图案。

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