公开(公告)号：US20120003769A1

公开(公告)日：2012-01-05

申请号：US13233399

申请日：2011-09-15

申请人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

发明人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

IPC分类号： H01L33/08

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

摘要翻译： 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。

公开(公告)号：US20110183463A1

公开(公告)日：2011-07-28

申请号：US12961170

申请日：2010-12-06

申请人： Sung-Ryul KIM ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Jae-Ho CHOI ,  Hwa-Yeul OH ,  Yong-Mo CHOI

发明人： Sung-Ryul KIM ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Jae-Ho CHOI ,  Hwa-Yeul OH ,  Yong-Mo CHOI

IPC分类号： H01L21/336

CPC分类号： H01L29/78618 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/7869

摘要： A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

摘要翻译： 制造薄膜晶体管（“TFT”）基板的方法包括在基板上形成包括栅电极的第一导电图案组，在第一导电图案组上形成栅极绝缘层，形成半导体层和欧姆接触层 通过图案化非晶硅层和氧化物半导体层，在栅极绝缘层上，通过图案化数据金属层，在欧姆接触层上形成包括源电极和漏电极的第二导电图案组，形成包括接触的保护层 并且在保护层的接触孔上形成像素电极。 还提供了包括由氧化物半导体形成的欧姆接触层的TFT基板。

公开(公告)号：US20090242881A1

公开(公告)日：2009-10-01

申请号：US12197573

申请日：2008-08-25

申请人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

发明人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Sung-Ryul KIM ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Yong-Mo CHOI

IPC分类号： H01L33/00

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

摘要翻译： 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。

公开(公告)号：US20080258143A1

公开(公告)日：2008-10-23

申请号：US12100436

申请日：2008-04-10

申请人： Sung-Ryul KIM ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Jae-Ho CHOI ,  Hwa-Yeul OH ,  Yong-Mo CHOI

发明人： Sung-Ryul KIM ,  Sung-Hoon YANG ,  Byoung-June KIM ,  Czang-Ho LEE ,  Jae-Ho CHOI ,  Hwa-Yeul OH ,  Yong-Mo CHOI

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/78618 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/7869

摘要： A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

摘要翻译： 制造薄膜晶体管（“TFT”）基板的方法包括在基板上形成包括栅电极的第一导电图案组，在第一导电图案组上形成栅极绝缘层，形成半导体层和欧姆接触层 通过图案化非晶硅层和氧化物半导体层，在栅极绝缘层上，通过图案化数据金属层，在欧姆接触层上形成包括源电极和漏电极的第二导电图案组，形成包括接触的保护层 并且在保护层的接触孔上形成像素电极。 还提供了包括由氧化物半导体形成的欧姆接触层的TFT基板。

公开(公告)号：US20100006835A1

公开(公告)日：2010-01-14

申请号：US12486328

申请日：2009-06-17

申请人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Sung-Ryul KIM ,  O-Sung SEO ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Seong-Hun KIM ,  Yong-Mo CHOI

发明人： Kap-Soo YOON ,  Sung-Hoon YANG ,  Sung-Ryul KIM ,  O-Sung SEO ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Seong-Hun KIM ,  Yong-Mo CHOI

IPC分类号： H01L29/786

CPC分类号： H01L27/12 ,  H01L27/1225 ,  H01L29/7869

摘要： A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern.

摘要翻译： 显示基板包括： 衬底，布置在衬底上的栅电极，布置在栅电极上的半导体图案，布置在半导体图案上的源电极，布置在半导体图案上并与源电极间隔开的漏电极，布置在 并且基本上覆盖源电极和漏极以覆盖源电极和漏电极，布置在绝缘层上并与半导体图案重叠的导电层图案，与漏电极电连接的像素电极，以及 存储电极，设置在所述基板上，与所述像素电极重叠地重叠，所述存储电极与所述导电层图案电连接。

公开(公告)号：US20100123861A1

公开(公告)日：2010-05-20

申请号：US12547039

申请日：2009-08-25

申请人： Seung-Hwan SHIM ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Kap-Soo YOON ,  Ki-Hun JEONG ,  Jae-Ho CHOI ,  Yang-Ho JUNG

发明人： Seung-Hwan SHIM ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Kap-Soo YOON ,  Ki-Hun JEONG ,  Jae-Ho CHOI ,  Yang-Ho JUNG

IPC分类号： G02F1/1335 ,  H01L21/28

CPC分类号： G02F1/136227 ,  G02F1/133514 ,  G02F2001/133565 ,  G02F2001/133567 ,  H01L27/1248

摘要： A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate.

摘要翻译： 液晶显示器包括： 设置在第一基板上的第一基板，栅极线和数据线，包括与数据线对准的突起和凹陷的滤色器，滤色器设置在数据线上，设置在滤色器上的像素电极， 面对第一基板的第二基板，设置在第二基板上的公共电极以及插在第一基板和第二基板之间的液晶层。

公开(公告)号：US20100019996A1

公开(公告)日：2010-01-28

申请号：US12486542

申请日：2009-06-17

申请人： Chun-Gi YOU ,  Kap-Soo YOON ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Jae-Ho CHOI

发明人： Chun-Gi YOU ,  Kap-Soo YOON ,  Gug-Rae JO ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Jae-Ho CHOI

IPC分类号： G09G3/30 ,  H01L21/00

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/7869

摘要： A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

摘要翻译： 显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案， 电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

公开(公告)号：US20110147740A1

公开(公告)日：2011-06-23

申请号：US12977853

申请日：2010-12-23

申请人： Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

发明人： Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78633

摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

摘要翻译： 本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 保护层，设置在所述氧化物半导体层上并与所述氧化物半导体层的沟道区域重叠; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 与所述氧化物半导体层的第二面接触且与所述源电极相对的漏电极，所述沟道区域设置在所述漏电极和所述源电极之间; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

公开(公告)号：US20100136775A1

公开(公告)日：2010-06-03

申请号：US12607567

申请日：2009-10-28

申请人： Seung-Ha CHOI ,  Sang-Gab KIM ,  Bong-Kyu SHIN ,  Sang-Uk LIM ,  Jin-Ho JU ,  Sung-Hoon YANG ,  Sang-Woo WHANGBO ,  Jae-Ho CHOI ,  Ki-Yeup LEE ,  Yun-Jong YEO ,  Shin-Il CHOI ,  Dong-Ju YANG ,  Hong-Kee CHIN ,  Yu-Gwang JEONG

发明人： Seung-Ha CHOI ,  Sang-Gab KIM ,  Bong-Kyu SHIN ,  Sang-Uk LIM ,  Jin-Ho JU ,  Sung-Hoon YANG ,  Sang-Woo WHANGBO ,  Jae-Ho CHOI ,  Ki-Yeup LEE ,  Yun-Jong YEO ,  Shin-Il CHOI ,  Dong-Ju YANG ,  Hong-Kee CHIN ,  Yu-Gwang JEONG

IPC分类号： H01L21/28

CPC分类号： H01L29/4908 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/458 ,  H01L29/7869

摘要： Provided is a method for manufacturing a thin-film transistor substrate, in which the etching characteristics of an insulating film and a passivation layer are enhanced. The insulating film and the passivation layer are deposited by low temperature chemical vapor deposition. The method includes disposing a gate wiring on an insulating substrate; disposing a gate insulating film on the gate wiring; disposing a data wiring on the gate insulating film; disposing a passivation layer on the data wiring; and forming a contact hole by etching at least one of the gate insulating film and the passivation layer, wherein at least one of the gate insulating film and the passivation layer is disposed at a temperature of about 280° C. or below, and the forming of the contact hole is performed at a pressure of about 60 mT or below.

摘要翻译： 提供一种制造薄膜晶体管基板的方法，其中提高了绝缘膜和钝化层的蚀刻特性。 通过低温化学气相沉积沉积绝缘膜和钝化层。 该方法包括在绝缘基板上设置栅极布线; 在栅极布线上设置栅极绝缘膜; 在栅极绝缘膜上设置数据布线; 在数据线上设置钝化层; 以及通过蚀刻所述栅极绝缘膜和所述钝化层中的至少一个来形成接触孔，其中所述栅极绝缘膜和所述钝化层中的至少一个设置在约280℃或更低的温度下，并且所述形成 的接触孔在约60mT以下的压力下进行。

公开(公告)号：US20120249523A1

公开(公告)日：2012-10-04

申请号：US13242154

申请日：2011-09-23

申请人： Jae-Ho CHOI ,  Bo-Ram KIM ,  Byoung-Jun LEE ,  Yun-Jae KIM ,  Nam-Hee GOO ,  Myoung-Chul KIM

发明人： Jae-Ho CHOI ,  Bo-Ram KIM ,  Byoung-Jun LEE ,  Yun-Jae KIM ,  Nam-Hee GOO ,  Myoung-Chul KIM

IPC分类号： G06T15/00

CPC分类号： G09G3/003 ,  H04N13/341 ,  H04N13/398 ,  H04N2213/008

摘要： A method of driving shutter glasses of a display system includes generating a display panel driving signal which drives a display panel of the display system, where the display panel displays a left image and a right image, generating a second three-dimensional (“3D”) synchronizing signal based on a first 3D synchronizing signal and the display panel driving signal, generating a third 3D synchronizing signal by adjusting an intensity of the second 3D synchronizing signal, generating a shutter control signal, which controls a left shutter and a right shutter of the shutter glasses, based on the third 3D synchronizing signal, and outputting the shutter control signal to the shutter glasses.

摘要翻译： 一种驱动显示系统的快门眼镜的方法包括：生成驱动显示系统的显示面板的显示面板驱动信号，显示面板显示左图像和右图像，生成第二三维（3D）同步 基于第一3D同步信号和显示面板驱动信号的信号，通过调整第二3D同步信号的强度产生第三3D同步信号，产生控制快门的左快门和右快门的快门控制信号 基于第三3D同步信号，并将快门控制信号输出到快门眼镜。