公开(公告)号：US20100072526A1

公开(公告)日：2010-03-25

申请号：US12554396

申请日：2009-09-04

申请人： Yoshinori Kumura ,  Hiroyuki Kanaya

发明人： Yoshinori Kumura ,  Hiroyuki Kanaya

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/57 ,  H01L27/11507 ,  H01L27/11509

摘要： A semiconductor memory device includes a semiconductor substrate; a ferroelectric capacitor comprising an upper electrode, a ferroelectric film, and a lower electrode above the semiconductor substrate; and an upper interlayer dielectric film surrounding a periphery of the ferroelectric capacitor, wherein a gap is provided between the ferroelectric capacitor and the upper interlayer dielectric film.

摘要翻译： 半导体存储器件包括半导体衬底; 一个铁电电容器，包括在半导体衬底之上的上电极，铁电体膜和下电极; 以及围绕所述铁电电容器的周围的上层间绝缘膜，其中在所述铁电电容器和所述上层间电介质膜之间设置有间隙。

公开(公告)号：US07429508B2

公开(公告)日：2008-09-30

申请号：US11941776

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L21/8242

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US20080217669A1

公开(公告)日：2008-09-11

申请号：US12038226

申请日：2008-02-27

申请人： Hiroyuki KANAYA

发明人： Hiroyuki KANAYA

IPC分类号： H01L27/105 ,  H01L21/8239

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor memory device comprising, a first transistor and a second transistor formed on a semiconductor substrate, a memory capacitor formed above the first transistor, the memory capacitor being connected to the first transistor, a dummy memory capacitor formed above the second transistor, a wiring layer formed above the memory capacitor and the dummy memory capacitor, the wiring layer being connected to the first transistor and the memory capacitor, a first plug connecting between the second transistor and the dummy memory capacitor, and a second plug connecting between the dummy memory capacitor and the wiring layer.

摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器件，包括形成在半导体衬底上的第一晶体管和第二晶体管，形成在第一晶体管上方的存储电容器，存储电容器连接到第一晶体管， 形成在所述第二晶体管上方的虚拟存储电容器，形成在所述存储电容器和所述虚拟存储电容器上方的布线层，所述布线层连接到所述第一晶体管和所述存储电容器，第一插头，连接在所述第二晶体管和所述虚拟存储器之间 电容器和连接在虚拟存储电容器和布线层之间的第二插头。

公开(公告)号：US20080076192A1

公开(公告)日：2008-03-27

申请号：US11941776

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L21/8239

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

摘要翻译： 半导体存储器件包括具有第一区域和第二区域的半导体衬底，放置在半导体衬底的第一区域中的晶体管，在第一和第二区域中的晶体管上形成在半导体衬底上的第一绝缘膜， 形成在第一区域的第一绝缘膜上并与晶体管电连接的第一铁电电容器，形成在第一铁电电容器上方的第一和第二区域上的第一绝缘膜上方的氢阻挡膜， 并且电连接到第一铁电电容器，以及第二触点，其穿过第二区域中的氢阻挡膜并处于浮置状态。

公开(公告)号：US20080073684A1

公开(公告)日：2008-03-27

申请号：US11941791

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L27/105

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US20080073683A1

公开(公告)日：2008-03-27

申请号：US11941755

申请日：2007-11-16

申请人： Osamu HIDAKA ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu HIDAKA ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L29/76

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US07259094B2

公开(公告)日：2007-08-21

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US07190015B2

公开(公告)日：2007-03-13

申请号：US10878051

申请日：2004-06-29

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： A semiconductor device including a semiconductor substrate, a capacitor formed above the semiconductor substrate, a first interlayer insulating film formed above the capacitor and having a trench, a wiring formed above the capacitor and formed in the trench, the wiring have a top surface flush with a top surface of the first interlayer insulating film, a first hydrogen barrier film formed in contact with the top surface of the wiring and the top surface of the first interlayer insulating film and preventing hydrogen from diffusing into the capacitor and a second interlayer insulating film formed on the first hydrogen barrier film.

摘要翻译： 一种半导体器件，包括半导体衬底，形成在半导体衬底上的电容器，形成在电容器上方并具有沟槽的第一层间绝缘膜，形成在电容器上方并形成在沟槽中的布线，布线具有与 第一层间绝缘膜的顶表面，与布线的顶表面接触形成的第一氢阻挡膜和第一层间绝缘膜的顶表面，并且防止氢扩散到电容器中，形成第二层间绝缘膜 在第一个氢气阻挡膜上。

公开(公告)号：US07091538B2

公开(公告)日：2006-08-15

申请号：US10954183

申请日：2004-10-01

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L29/76

CPC分类号： H01L28/65 ,  H01L21/7687 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/55

摘要： A semiconductor device comprises a semiconductor substrate including a diffusion area, a capacitor provided above the semiconductor substrate and including a lower electrode, a dielectric film, and an upper electrode, a plug provided between the semiconductor substrate and the capacitor and having a lower end connected to the diffusion area and an upper end connected to the lower electrode, and a dummy plug provided between the semiconductor substrate and the capacitor and having a lower end not connected to the diffusion area and an upper end connected to the lower electrode.

摘要翻译： 一种半导体器件包括：包括扩散区域的半导体衬底，设置在半导体衬底上方并包括下电极，电介质膜和上电极的电容器，设置在半导体衬底和电容器之间并具有下端连接的插头 扩散区域和连接到下电极的上端，以及设置在半导体衬底和电容器之间并具有未连接到扩散区域的下端和连接到下电极的上端的虚拟插头。

公开(公告)号：US20050255663A1

公开(公告)日：2005-11-17

申请号：US10856868

申请日：2004-06-01

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Karl Hornik ,  Andreas Hiliger

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Karl Hornik ,  Andreas Hiliger

IPC分类号： H01L27/105 ,  H01L21/20 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A semiconductor device according to the present invention comprises a capacitor including a lower electrode, a dielectric material, and an upper electrode. The device further comprises a first protective film which contacts the upper electrode to constitute a columnar structure of films formed by a sputtering process and a second protective film formed above the first protective film by a CVD process.

摘要翻译： 根据本发明的半导体器件包括包括下电极，电介质材料和上电极的电容器。 该装置还包括与上电极接触以构成通过溅射工艺形成的膜的柱状结构的第一保护膜和通过CVD工艺形成在第一保护膜上方的第二保护膜。