Abstract:
Provided are a method of and apparatus for lossless video encoding and decoding, in which a differential residual block generated by calculating a difference between pixels of a residual block resulting from interprediction is encoded, thereby improving the compression rate. The method of lossless video encoding includes performing interprediction between a reference frame and a current frame in units of a predetermined-size block to generate a predicted block of a current block to be encoded, generating a residual block composed of residual signals corresponding to differences between pixels of the predicted block and the current block, calculating differences between the residual signals of the residual block in a predetermined direction and generating a differential residual block based on the calculated differences, and performing entropy-encoding on the differential residual block.
Abstract:
Methods of fabricating nonvolatile memory devices are disclosed. A disclosed method comprises forming a trench isolation layer on a substrate; forming an oxide layer and a polysilicon layer; forming a sacrificial layer on the polysilicon layer; forming a photoresist pattern on the sacrificial layer; performing an etching process using the photoresist pattern as a mask and, at the same time, attaching polymers on sidewalls of the etched sacrificial layer to form polymer layers, the polymers being generated from the etching of the sacrificial layer; and forming a floating gate and a tunnel oxide by removing part of the polysilicon layer and the oxide layer using the polymer layers and the photoresist pattern as a mask. The disclosed method can increase the width of a floating gate by using polymer layers in fabricating a two-bit type cell, thereby ensuring a higher coupling ratio compared to the coupling ratio of a conventional two-bit type cell.
Abstract:
An apparatus for catching byproducts in semiconductor device processing equipment is disposed in an exhaust line between a process chamber and a vacuum pump. The apparatus includes a cylindrical trap housing member, an upper cover and a lower cover covering the upper part and lower part of the trap housing, respectively, a heater disposed under the upper cover, first and second cooling plates disposed in the trap housing, a post spacing the cooling plates, apart and a cooling system for cooling respective portions of the apparatus. The cooling system includes a delivery pipe for supplying refrigerant, a discharge pipe for discharging the refrigerant from the apparatus, first cooling piping extending through each cooling plate and connected to the delivery and discharge pipes, and second cooling piping extending helically along the outer circumferential surface of the trap housing.
Abstract:
A CMOS image sensor includes a first conductive type semiconductor substrate having an active region and a device isolation region, a device isolation film formed in the device isolation region of the semiconductor substrate, a second conductive type diffusion region formed in the active region of the semiconductor substrate, and an ion implantation prevention layer formed in the vicinity of the device isolation film, including a boundary portion between the device isolation film and the second conductive type diffusion region.
Abstract:
A paper transfer unit includes a pinch roller and a feed roller having a first outer portion, which defines a reference radius used to determine a paper transfer rate. A second outer portion is also provided having a substantially elastic rubber layer An elastic element elastically biases the pinch roller and the feed roller toward each other.
Abstract:
A thermal printer and a printing method are provided. The thermal printer includes a thermal printhead for applying a predetermined amount of heat to a thermal recording paper to develop a print layer provided on the thermal recording paper; a feeding roller for feeding the thermal recording paper, a platen roller for facing the thermal printhead to support the thermal recording paper, wherein the thermal recording paper passes between the thermal printhead and the platen roller, a first encoder sensor for detecting a rotation of the platen roller, a second encoder sensor for detecting rotation of the feeding roller; a counting unit for counting first and second pulse signals generated from the first and second encoder sensors, respectively, and a switching unit of the first and second pulse signals as a variable to control the feeding of the thermal recording paper.
Abstract:
A method of manufacturing an EEPROM device is disclosed. An example method forms a screen oxide film on a semiconductor substrate, forms a first ion implantation mask defining a gate insulating film forming region on the screen oxide film, and performs a first ion implantation on the semiconductor substrate and the first ion implantation mask. The example method also performs a first annealing of the semiconductor substrate, removes the screen oxide film and the first ion implantation mask, and forms a gate oxide film on the semiconductor substrate. In addition, the example method forms a second ion implantation mask defining a gate insulating film forming region on the gate oxide film, performs a second ion implantation on the semiconductor substrate and the second ion implantation mask, performs a second annealing for the semiconductor substrate, removes the second ion implantation mask; and forms a tunnel oxide film on the gate oxide film.
Abstract:
A method for manufacturing a mask ROM of flat cell structure. The method includes the steps of: providing a semiconductor substrate having a flat cell array region and a peripheral circuit region; forming a first and a second mask patterns exposing a substrate portions corresponding to a diffusion layer formation region of the flat cell array region and a device isolation layer of the peripheral circuit region; ion-implanting an impurity in the exposed substrate portions; forming a trench by etching the exposed substrate portion peripheral circuit region; forming a linear oxide layer on the first and the second mask patterns and the surface of the trench, a diffusion layer on the flat cell array region, and a barrier oxide layer on the surface of diffusion layer in accordance with a thermal oxidation process; depositing an oxide layer on the linear oxide layer to fill up the trench; polishing the oxide layer to expose the surface of the first and the second mask patterns; and forming a diffusion layer on the flat cell array region and a trench type isolation layer on the peripheral circuit region by removing the first and the second mask patterns.
Abstract:
Provided are a level shifter circuit and a corresponding method for controlling voltage levels of a clock signal and an inverted clock signal for driving gate lines of a ASG thin film transistor liquid crystal display panel, where the level shifter circuit includes first and second level shifters, the first level shifter controls the voltage level of the clock signal to swing between a negative external voltage level and a positive external voltage level in response to a clock activating signal, and increases the voltage level of the clock signal from the negative external voltage level to a power supply voltage level or decreases it from the positive external voltage level to a ground voltage level while a pre-charge clock activating signal is activated, the second level shifter controls the voltage level of the inverted clock signal to swing between the negative external voltage level and the positive external voltage level in response to an inverted clock activating signal, and increases the voltage level of the inverted clock signal from the negative external voltage level to the power supply voltage level or decreases it from the positive external voltage level to the ground voltage level while an inverted pre-charge clock activating signal is activated, and the level shifter circuit increases or decreases the voltage levels of the clock signal and inverted clock signal using a battery voltage or a ground voltage, thereby reducing current consumption caused by the increase or decrease in the voltage level.
Abstract:
The present invention is to provide a method and a transdermal drug delivery device for treating erectile dysfunction which comprises a patch containing pharmaceutically active ingredient and being directly apply to the male glans penis and its support and the rings for constricting the base part of the penis to aid the erection. The patch according to the present invention may be divided into two types, i.e. a cylinder type patch and a multi-reservoir type patch. The transdermal drug delivery patch device of the present invention is painless and safely to use and may be effectively produced and maintained erection of the penis without the adverse side effects and with a high degree of patient acceptability in the case of male impotence.