Substrate processing apparatus and substrate processing method
    31.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US08894775B2

    公开(公告)日:2014-11-25

    申请号:US12209039

    申请日:2008-09-11

    IPC分类号: B08B3/04 H01L21/67

    CPC分类号: H01L21/67051

    摘要: After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.

    摘要翻译: 在清洁基板之后,形成冲洗液体的液体层以覆盖基板的一个表面。 然后,液体供给喷嘴从基板的中心的上方向外侧移动。 液体供给喷嘴在从基板的中心上方移动预定距离的时间点停止一次。 在该时间段内,通过离心力将液体层分割成薄层区域,从而在液体层的中央形成干燥芯。 此后,液体供给喷嘴再次向外移动,使得在干燥芯作为起点的基板上不存在冲洗液体的干燥区域膨胀。

    Substrate processing method
    32.
    发明授权
    Substrate processing method 有权
    基板加工方法

    公开(公告)号:US08356424B2

    公开(公告)日:2013-01-22

    申请号:US12842485

    申请日:2010-07-23

    IPC分类号: B05D3/04

    CPC分类号: H01L21/67051 H01L21/67225

    摘要: A substrate processing method comprises the step of subjecting a substrate to drying processing in at least one of a processing section and an interface, wherein the step of subjecting the substrate to the drying processing comprises the steps of: rotating the substrate at a first rotational speed around an axis perpendicular to the substrate, while holding the substrate horizontally, forming a liquid layer on the substrate in a state where the substrate is rotated at the first rotational speed, gradually and continuously increasing the rotational speed of the substrate to a second rotational speed after the formation of the liquid layer, and starting discharging a gas to the liquid layer on the substrate while the substrate is rotated at the second rotational speed.

    摘要翻译: 基板处理方法包括以下步骤:对基板进行处理部和界面中的至少一个的干燥处理,其中对基板进行干燥处理的步骤包括以下步骤:以第一转速旋转基板 围绕垂直于基板的轴线,同时水平地保持基板,在基板以第一转速旋转的状态下在基板上形成液体层,逐渐且连续地将基板的旋转速度提高到第二转速 在形成液体层之后,并且在基板以第二旋转速度旋转的同时开始将气体排放到基板上的液体层。

    METHOD AND SYSTEM FOR REMOVAL OF FILMS FROM PERIPHERAL PORTIONS OF A SUBSTRATE
    34.
    发明申请
    METHOD AND SYSTEM FOR REMOVAL OF FILMS FROM PERIPHERAL PORTIONS OF A SUBSTRATE 审中-公开
    从衬底的外围部分去除膜的方法和系统

    公开(公告)号:US20120037593A1

    公开(公告)日:2012-02-16

    申请号:US13284603

    申请日:2011-10-28

    IPC分类号: C23F1/02

    摘要: A substrate processing apparatus includes an anti-reflection film processing block, a resist film processing block, and a resist cover film processing block. In the processing blocks, an anti-reflection film, a resist film, and a resist cover film are formed on a substrate, respectively. Additionally, a film formed at a peripheral edge of the substrate is removed. The film formed at the peripheral edge of the substrate is removed by supplying a removal liquid capable of dissolving and removing the film to the peripheral edge of the substrate during rotation. When the peripheral edge of the film is removed, the position of the substrate is corrected such that the center of the substrate coincides with the center of a rotation shaft.

    摘要翻译: 基板处理装置包括防反射膜处理块,抗蚀剂膜处理块和抗蚀剂覆盖膜处理块。 在处理块中,分别在基板上形成抗反射膜,抗蚀剂膜和抗蚀剂覆盖膜。 此外,除去在基板的周缘形成的膜。 通过在旋转期间通过提供能够将膜溶解并除去膜的周边边缘的去除液体来除去形成在基板的周缘的膜。 当去除膜的外围边缘时,校正基板的位置使得基板的中心与旋转轴的中心重合。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    38.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号:US20090074402A1

    公开(公告)日:2009-03-19

    申请号:US12209039

    申请日:2008-09-11

    IPC分类号: G03D5/00

    CPC分类号: H01L21/67051

    摘要: After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.

    摘要翻译: 在清洁基板之后,形成冲洗液体的液体层以覆盖基板的一个表面。 然后,液体供给喷嘴从基板的中心的上方向外侧移动。 液体供给喷嘴在从基板的中心上方移动预定距离的时间点停止一次。 在该时间段内,通过离心力将液体层分割成薄层区域,从而在液体层的中央形成干燥芯。 此后,液体供给喷嘴再次向外移动,使得在干燥芯作为起点的基板上不存在冲洗液体的干燥区域膨胀。

    Method and system for removal of films from peripheral portions of a substrate
    40.
    发明申请
    Method and system for removal of films from peripheral portions of a substrate 审中-公开
    从基板的周边部分去除膜的方法和系统

    公开(公告)号:US20080226830A1

    公开(公告)日:2008-09-18

    申请号:US11897965

    申请日:2007-08-31

    IPC分类号: B05D1/36 B05C9/08

    摘要: A substrate processing apparatus includes an anti-reflection film processing block, a resist film processing block, and a resist cover film processing block. In the processing blocks, an anti-reflection film, a resist film, and a resist cover film are formed on a substrate, respectively. Additionally, a film formed at a peripheral edge of the substrate is removed. The film formed at the peripheral edge of the substrate is removed by supplying a removal liquid capable of dissolving and removing the film to the peripheral edge of the substrate during rotation. When the peripheral edge of the film is removed, the position of the substrate is corrected such that the center of the substrate coincides with the center of a rotation shaft.

    摘要翻译: 基板处理装置包括防反射膜处理块,抗蚀剂膜处理块和抗蚀剂覆盖膜处理块。 在处理块中,分别在基板上形成抗反射膜,抗蚀剂膜和抗蚀剂覆盖膜。 此外,除去在基板的周缘形成的膜。 通过在旋转期间通过提供能够将膜溶解并除去膜的周边边缘的去除液体来除去形成在基板的周缘的膜。 当去除膜的外围边缘时,校正基板的位置使得基板的中心与旋转轴的中心重合。