Steel wire rod
    34.
    发明授权
    Steel wire rod 有权
    钢丝杆

    公开(公告)号:US08092916B2

    公开(公告)日:2012-01-10

    申请号:US12409679

    申请日:2009-03-24

    IPC分类号: B32B15/02 B32B15/04

    摘要: An FeO layer including fine crystal grains having random orientation is formed as inner layer scale on the surface of the steel wire rod containing C: 0.05-1.2 mass % (hereinafter referred to as “%”), Si: 0.01-0.50%, Mn: 0.1-1.5%, P: 0.02% or below, S: 0.02% or below, N: 0.005% or below, an Fe2SiO4 layer with the thickness: 0.01-1.0 μm is formed in the boundary face between the FeO layer of the inner layer scale and steel, and the thickness of the inner layer scale is 1-40% of the total scale thickness. In another aspect, the maximum grain size of the crystal grain of the inner layer scale is 5.0 μm or below and the average grain size is 2.0 μm or below.

    摘要翻译: 在含有C:0.05〜1.2质量%(以下称为“%”),Si:0.01-0.50%,Mn:0.01-0.50%的钢丝网的表面上形成包含具有随机取向的细晶粒的FeO层作为内层标尺 :0.1-1.5%,P:0.02%以下,S:0.02%以下,N:0.005%以下,在FeO层的FeO层之间的边界面上形成厚度为0.01〜1.0μm的Fe 2 SiO 4层 内层刻度和钢,内层刻度的厚度为总刻度厚度的1-40%。 另一方面,内层鳞片的晶粒的最大粒径为5.0μm以下,平均粒径为2.0μm以下。

    CU WIRE IN SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
    37.
    发明申请
    CU WIRE IN SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
    CU线上半导体器件及其制造方法

    公开(公告)号:US20100052171A1

    公开(公告)日:2010-03-04

    申请号:US12515538

    申请日:2007-11-19

    IPC分类号: H01L23/532 H01L21/768

    摘要: A Cu wire in a semiconductor device according to the present invention is a Cu wire embedded into wiring gutters or interlayer connective channels formed in an insulating film on a semiconductor substrate and the Cu wire comprises: a barrier layer comprising TaN formed on the wiring gutter side or the interlayer connective channel side; and a wire main body comprising Cu comprising one or more elements selected from the group consisting of Pt, In, Ti, Nb, B, Fe, V, Zr, Hf, Ga, Tl, Ru, Re, and Os in a total content of 0.05 to 3.0 atomic percent. The Cu wire in a semiconductor device according to the present invention is excellent in adhesiveness between the wire main body and the barrier layer.

    摘要翻译: 根据本发明的半导体器件中的Cu线是嵌入到形成在半导体衬底上的绝缘膜中的布线沟或层间连接沟道中的Cu线,并且所述Cu线包括:形成在布线槽侧的TaN的阻挡层 或层间连接通道侧; 以及包含Cu,其包含选自Pt,In,Ti,Nb,B,Fe,V,Zr,Hf,Ga,Tl,Ru,Re和Os中的一种以上的元素,总含量 为0.05〜3.0原子%。 根据本发明的半导体器件中的Cu线在线主体和阻挡层之间的粘附性优异。

    JOINT PRODUCT BETWEEN STEEL PRODUCT AND ALUMINUM MATERIAL, SPOT WELDING METHOD FOR THE JOINT PRODUCT, AND ELECTRODE CHIP FOR USE IN THE JOINT PRODUCT
    38.
    发明申请
    JOINT PRODUCT BETWEEN STEEL PRODUCT AND ALUMINUM MATERIAL, SPOT WELDING METHOD FOR THE JOINT PRODUCT, AND ELECTRODE CHIP FOR USE IN THE JOINT PRODUCT 审中-公开
    钢产品和铝材料之间的接合产品,接头产品的点焊焊接方法和用于接合产品的电极芯片

    公开(公告)号:US20090011269A1

    公开(公告)日:2009-01-08

    申请号:US12280599

    申请日:2007-02-21

    摘要: To provide a joint product of a steel product and an aluminum material, and a spot welding method for the joint product, ensuring that spot welding with high bonding strength can be performed. In one embodiment, a steel product 1 having a sheet thickness t1 of 0.3 to 3.0 mm and an aluminum material 2 having a sheet thickness t2 of 0.5 to 4.0 mm are joined together by spot welding to form a joint product of a steel product and an aluminum produce. In this joint product, the nugget area in the joint part is from 20×t20.5 to 100×t20.5 mm2, the area of a portion where the thickness of the interface reaction layer is from 0.5 to 3 μm is 10×t20.5 mm2 or more, and the difference between the interface reaction layer thickness at the joint part center and the interface reaction layer thickness at a point distant from the joint part center by a distance of one-fourth of the joint diameter Dc is 5 μm or less. According to this construction, there can be provided a dissimilar material joint product with excellent bonding strength, which can be formed by an existing spot welding apparatus at a low cost without newly using other materials such as clad material or without newly adding a separate step, and a spot welding method for the dissimilar material joint product.

    摘要翻译: 为了提供钢材和铝材的联合产品,以及用于接合产品的点焊方法,确保可以执行高粘合强度的点焊。 在一个实施例中,通过点焊将片材厚度t1为0.3〜3.0mm的钢制品1和板厚t2为0.5〜4.0mm的铝材2接合在一起,形成钢材和 铝制品。 在该接合部中,接合部的熔核面积为20×20.5〜100×20.5mm 2,界面反应层的厚度为0.5〜3μm的部分的面积为10×20.5mm 2以上, 并且在接合部中心的界面反应层厚度与远离接合部中心的点的界面反应层厚度之间的差为接合直径Dc的四分之一的距离为5μm以下。 根据这种结构,可以提供一种具有优异接合强度的不同材料接合产品,其可以通过现有的点焊装置以低成本形成,而不需要重新使用诸如包覆材料的其它材料,或者不新增单独的步骤, 以及用于异种材料接合产品的点焊方法。