Data storage device using magnetic domain wall movement and method of operating the same
    31.
    发明授权
    Data storage device using magnetic domain wall movement and method of operating the same 有权
    使用磁畴壁运动的数据存储装置及其操作方法

    公开(公告)号:US07817461B2

    公开(公告)日:2010-10-19

    申请号:US11752397

    申请日:2007-05-23

    IPC分类号: G11C11/00

    摘要: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer including a plurality of magnetic domains, first and second ferromagnetic pinned layers formed on lower and upper surfaces of the magnetic layer, respectively, and having opposite magnetization directions, first and second insulating spacers interposed between the first and second ferromagnetic pinned layers and the magnetic layer, respectively, and an energy supplying unit applying energy to the magnetic layer for a magnetic domain wall movement.

    摘要翻译: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 数据存储装置包括:包含多个磁畴的磁性层,分别形成在磁性层的下表面和上表面上并且具有相反的磁化方向的第一和第二铁磁固定层,第一和第二绝缘垫片插入在第一和 第二铁磁钉扎层和磁性层,以及向磁性层施加能量以供磁畴壁运动的能量供给单元。

    METHOD OF MANUFACTURING FILM BULK ACOUSTIC RESONATOR USING INTERNAL STRESS OF METALLIC FILM AND RESONATOR MANUFACTURED THEREBY
    32.
    发明申请
    METHOD OF MANUFACTURING FILM BULK ACOUSTIC RESONATOR USING INTERNAL STRESS OF METALLIC FILM AND RESONATOR MANUFACTURED THEREBY 有权
    使用金属膜内部应力和制造的谐振器制造薄膜泡沫谐振器的方法

    公开(公告)号:US20100132174A1

    公开(公告)日:2010-06-03

    申请号:US12684454

    申请日:2010-01-08

    IPC分类号: H01L41/22

    摘要: A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

    摘要翻译: 一种制造薄膜体声波谐振器的方法和由此制造的谐振器。 该方法包括在半导体衬底上层叠牺牲层,从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触,通过在下电极上沉积金属膜形成下电极 牺牲层,通过基于牺牲层的形状进行图案化,通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层,并且通过将金属膜沉积在上而形成上电极 压电层和基于压电层的形状的图案化,其中当沉积用于下电极的金属膜时,沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

    Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby
    33.
    发明授权
    Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby 有权
    使用金属膜的内部应力和由此制造的谐振器制造膜体声波谐振器的方法

    公开(公告)号:US07671427B2

    公开(公告)日:2010-03-02

    申请号:US10838326

    申请日:2004-05-05

    IPC分类号: H01L47/00

    摘要: A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

    摘要翻译: 一种制造薄膜体声波谐振器的方法和由此制造的谐振器。 该方法包括在半导体衬底上层叠牺牲层,从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触,通过在下电极上沉积金属膜形成下电极 牺牲层,通过基于牺牲层的形状进行图案化,通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层,并且通过将金属膜沉积在上而形成上电极 压电层和基于压电层的形状的图案化,其中当沉积用于下电极的金属膜时,沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

    MAGNETIC RECORDING MEDIUM, HARD DISK DRIVE EMPLOYING THE SAME, AND METHOD OF MEASURING WRITE READ OFFSET OF THE HARD DISK DRIVE
    34.
    发明申请
    MAGNETIC RECORDING MEDIUM, HARD DISK DRIVE EMPLOYING THE SAME, AND METHOD OF MEASURING WRITE READ OFFSET OF THE HARD DISK DRIVE 审中-公开
    磁记录介质,使用其的硬盘驱动器以及测量硬盘驱动器的写入偏移量的方法

    公开(公告)号:US20090011282A1

    公开(公告)日:2009-01-08

    申请号:US12018820

    申请日:2008-01-24

    IPC分类号: G11B5/66

    摘要: A magnetic recording medium, a hard disk drive (HDD) employing the same, and a method of measuring a write read (WR) offset of the HDD are provided. The magnetic recording medium includes a disk substrate and a magnetic recording layer formed on one or both surfaces of the disk substrate, wherein the magnetic recording layer comprises: at least one pattern area patterned into a plurality of data tracks wherein the at least one pattern area is formed of a patterned magnetic substance; and at least one continuous area formed of a continuous magnetic substance, wherein the continuous area is used to measure a WR offset. Accordingly, the HDD employing the magnetic recording medium can correct the WR offset of the magnetic head without requiring large modifications.

    摘要翻译: 提供一种磁记录介质,采用该记录介质的硬盘驱动器(HDD)以及测量HDD的写入读取(WR)偏移的方法。 磁记录介质包括形成在盘基片的一个或两个表面上的盘基片和磁记录层,其中磁记录层包括:图案化成多个数据道的至少一个图案区,其中至少一个图案区 由图案化的磁性物质形成; 以及由连续磁性物质形成的至少一个连续区域,其中所述连续区域用于测量WR偏移。 因此,使用磁记录介质的HDD可以校正磁头的WR偏移,而不需要大的修改。

    Magnetic domain information storage device and method of manufacturing the same
    36.
    发明申请
    Magnetic domain information storage device and method of manufacturing the same 有权
    磁畴信息存储装置及其制造方法

    公开(公告)号:US20080137406A1

    公开(公告)日:2008-06-12

    申请号:US11987925

    申请日:2007-12-06

    IPC分类号: G11C11/15 H01L21/00

    CPC分类号: G11C19/0808 Y10S977/933

    摘要: Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.

    摘要翻译: 示例性实施例可以提供具有沟槽的磁畴信息存储设备和制造信息存储设备的方法。 示例性实施例信息存储设备可以包括在具有多个磁畴的基板上的磁性层和用于移动磁畴壁的功率单元。 磁性层可以平行于衬底,并且磁性层中的多个沟槽可以垂直于衬底。 对应于沟槽的磁性层的下表面的部分可以向下突出。

    Hard disk drive having a damper for reducing vibrations
    37.
    发明授权
    Hard disk drive having a damper for reducing vibrations 失效
    具有用于减少振动的阻尼器的硬盘驱动器

    公开(公告)号:US07286320B2

    公开(公告)日:2007-10-23

    申请号:US11270591

    申请日:2005-11-10

    IPC分类号: G11B17/02

    CPC分类号: G11B25/043 G11B33/08

    摘要: A hard disk drive having a vibration reducing damper is disclosed. The hard disk drive is provided with a damper which is interposed between a through hole provided at a cover plate and a screw joined to the upper end of the shaft of a spindle motor, and includes at least one viscoelastic material layer. It is preferable that the damper has a multi-layered structure in which at least one high stiffness layer has relatively higher stiffness and at least one low stiffness layer made of a viscoelastic material has relatively lower stiffness. With the above configuration, the damper restrains vibrations generated by the spindle from being transferred to the cover plate, noises generated by the hard disk drive are reduced, and, in addition, since vibrations generated by the spindle motor are damped, disk fluttering is reduced.

    摘要翻译: 公开了一种具有减振阻尼器的硬盘驱动器。 硬盘驱动器设置有阻尼器,其设置在设置在盖板上的通孔和与主轴电机的轴的上端接合的螺钉之间,并且包括至少一个粘弹性材料层。 优选地,阻尼器具有多层结构,其中至少一个高刚度层具有相对较高的刚度,并且由粘弹性材料制成的至少一个低刚度层具有相对较低的刚度。 通过上述结构,阻尼器抑制由主轴产生的振动传递到盖板,由硬盘驱动器产生的噪声减小,此外,由于主轴电动机产生的振动被阻尼,所以盘振动减小 。

    Method for manufacturing micro electro-mechanical systems using solder balls
    38.
    发明授权
    Method for manufacturing micro electro-mechanical systems using solder balls 有权
    使用焊球制造微机电系统的方法

    公开(公告)号:US07008817B2

    公开(公告)日:2006-03-07

    申请号:US10784144

    申请日:2004-02-23

    IPC分类号: H01L21/44 H01L21/48 H01L21/50

    摘要: A method for manufacturing micro electro-mechanical systems includes forming an insulation layer on an upper surface of a semiconductor substrate, forming a structure layer on an upper surface of the insulation layer and etching the structure layer, forming an under bump metal on a predetermined position of an upper surface of the structure layer, forming a via hole in a glass substrate corresponding to the position of the under bump metal and in a shape such that the via hole is larger in diameter at an upper surface of the glass substrate than at a lower surface of the glass substrate, wherein the glass substrate is bonded to the upper surface of the structure layer and creates a vacuum chamber that protects a structure of the structure layer, and arranging a solder ball in the via hole and bonding the solder ball to the under bump metal.

    摘要翻译: 一种制造微电子机械系统的方法,包括在半导体衬底的上表面上形成绝缘层,在绝缘层的上表面上形成结构层并蚀刻结构层,在预定位置上形成凹凸金属 所述结构层的上表面在对应于所述凸块下金属的位置的玻璃基板中形成通孔,并且所述通孔在所述玻璃基板的上表面处的直径比在 玻璃基板的下表面,其中玻璃基板结合到结构层的上表面,并且形成保护结构层的结构的真空室,并且在通孔中布置焊球并将焊球接合到 下凸块金属。

    Multi-stack memory device
    39.
    发明授权
    Multi-stack memory device 有权
    多堆存储器件

    公开(公告)号:US08437160B2

    公开(公告)日:2013-05-07

    申请号:US11978583

    申请日:2007-10-30

    IPC分类号: G11C5/02

    摘要: Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.

    摘要翻译: 本发明提供一种多层存储装置,其特征在于,包括具有垂直堆叠的多个存储单元和多个存储单元行的存储单元组,以及与所述存储单元组连接的多个晶体管,其中, 连接到包含在多个存储单元行中的至少两行的存储单元,并通过公共线连接。 公共线可以是栅线或位线。