摘要:
Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer including a plurality of magnetic domains, first and second ferromagnetic pinned layers formed on lower and upper surfaces of the magnetic layer, respectively, and having opposite magnetization directions, first and second insulating spacers interposed between the first and second ferromagnetic pinned layers and the magnetic layer, respectively, and an energy supplying unit applying energy to the magnetic layer for a magnetic domain wall movement.
摘要:
A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.
摘要:
A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.
摘要:
A magnetic recording medium, a hard disk drive (HDD) employing the same, and a method of measuring a write read (WR) offset of the HDD are provided. The magnetic recording medium includes a disk substrate and a magnetic recording layer formed on one or both surfaces of the disk substrate, wherein the magnetic recording layer comprises: at least one pattern area patterned into a plurality of data tracks wherein the at least one pattern area is formed of a patterned magnetic substance; and at least one continuous area formed of a continuous magnetic substance, wherein the continuous area is used to measure a WR offset. Accordingly, the HDD employing the magnetic recording medium can correct the WR offset of the magnetic head without requiring large modifications.
摘要:
A process and an apparatus for performing a UV nano-imprint lithography are provided. The process uses a polymer pad which allows a uniform application of pressure to a patterned template and an easy removal of a residual resin layer. The apparatus includes a tilt and decentering corrector which allows an accurate alignment of layers during the nano-imprint lithography process.
摘要:
Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.
摘要:
A hard disk drive having a vibration reducing damper is disclosed. The hard disk drive is provided with a damper which is interposed between a through hole provided at a cover plate and a screw joined to the upper end of the shaft of a spindle motor, and includes at least one viscoelastic material layer. It is preferable that the damper has a multi-layered structure in which at least one high stiffness layer has relatively higher stiffness and at least one low stiffness layer made of a viscoelastic material has relatively lower stiffness. With the above configuration, the damper restrains vibrations generated by the spindle from being transferred to the cover plate, noises generated by the hard disk drive are reduced, and, in addition, since vibrations generated by the spindle motor are damped, disk fluttering is reduced.
摘要:
A method for manufacturing micro electro-mechanical systems includes forming an insulation layer on an upper surface of a semiconductor substrate, forming a structure layer on an upper surface of the insulation layer and etching the structure layer, forming an under bump metal on a predetermined position of an upper surface of the structure layer, forming a via hole in a glass substrate corresponding to the position of the under bump metal and in a shape such that the via hole is larger in diameter at an upper surface of the glass substrate than at a lower surface of the glass substrate, wherein the glass substrate is bonded to the upper surface of the structure layer and creates a vacuum chamber that protects a structure of the structure layer, and arranging a solder ball in the via hole and bonding the solder ball to the under bump metal.
摘要:
Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.
摘要:
A process and an apparatus for performing a UV nano-imprint lithography are provided. The process uses a polymer pad which allows a uniform application of pressure to a patterned template and an easy removal of a residual resin layer. The apparatus includes a tilt and decentering corrector which allows an accurate alignment of layers during the nano-imprint lithography process.