公开(公告)号：US20250105015A1

公开(公告)日：2025-03-27

申请号：US18373080

申请日：2023-09-26

Applicant: Tokyo Electron Limited

Inventor： Shihsheng CHANG ,  Yen-Tien LU ,  Du ZHANG ,  Kai-Hung YU ,  David L O'MEARA

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/033

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method may include forming a first hardmask layer over a substrate. The method may include forming a second hardmask layer over the first hardmask layer. The method may include transferring a pattern from the second hardmask layer to the first hardmask layer, wherein the pattern in the first hardmask layer comprises a plurality of protruding structures, and each of the plurality of protruding structures has respective portions of its two sidewalls extending toward each other. The method may include depositing a modification layer extending along at least the respective portions of the sidewalls of each of the protruding structures. The method may include etching the substrate with the protruding structures and the modification layer both serving as a mask.

公开(公告)号：US20250104977A1

公开(公告)日：2025-03-27

申请号：US18885219

申请日：2024-09-13

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Eiki KAMATA

IPC: H01J37/32

Abstract: There is provided a plasma source comprising: a housing that defines a plasma generation space; a gas inlet disposed at the housing and configured to introduce a gas; a power supply part disposed at the housing and configured to supply a radio frequency (RF) power; a supply port disposed at the housing and configured to supply active species of plasma produced from the gas in the plasma generation space; a dielectric plate that is disposed at the housing, transmits the RF power from the power supply part to the plasma generation space, and has an opening at a center thereof; a slot formed between the power supply part and the dielectric plate and through which the RF power propagates; and a gas supply line disposed at the housing, and having one end connected to the gas inlet and the other end from which a gas is supplied to the opening.

公开(公告)号：US20250101588A1

公开(公告)日：2025-03-27

申请号：US18893142

申请日：2024-09-23

Applicant: Tokyo Electron Limited

Inventor： Masato KADOBE ,  Tatsuya YAMAGUCHI

IPC: C23C16/455

Abstract: A substrate processing apparatus includes a processing container body capable of accommodating a substrate holder that holds a substrate, a pipe branching from the processing container body and extending horizontally from a sidewall of the processing container body, a temperature adjustment mechanism having a housing surrounding the pipe and configured to adjust a temperature of the pipe, and an injector arranged in the pipe.

公开(公告)号：US12261028B2

公开(公告)日：2025-03-25

申请号：US18210012

申请日：2023-06-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shuichi Takahashi ,  Takaharu Miyadate ,  Takaaki Kikuchi ,  Atsushi Ogata ,  Nobutaka Sasaki ,  Takashi Taira

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: In a plasma processing apparatus, a table has a wafer support to hold a wafer and a peripheral segment surrounding the wafer support and having through-holes. The peripheral segment has an upper surface lower than that of the wafer support. An outer focus ring is disposed over the peripheral segment and has a recess or a cutout at an inner portion of the outer focus ring, and the recess or cutout has through-holes. An inner focus ring is disposed in the recess or cutout of the outer focus ring. Lift pins respectively extend through the through-holes of the peripheral segment and the through-holes of the recess or cutout of the outer focus ring. Shift mechanisms control shift of the respective lift pins.

公开(公告)号：US12257611B2

公开(公告)日：2025-03-25

申请号：US17914108

申请日：2021-03-15

Applicant: Tokyo Electron Limited

Inventor： Satoshi Shimmura ,  Koji Takayanagi ,  Kenta Shibasaki ,  Hiroichi Inada

IPC: B08B13/00 ,  B05C11/08 ,  B05C21/00 ,  B08B9/08 ,  G03F7/16

Abstract: A cleaning jig of a disc shape used for cleaning an inside of a container while being held by a rotary holding device in a same manner as a substrate in a spin coating apparatus that supplies a processing liquid onto a substrate held by the rotary holding device disposed in the container and forms a film of the processing liquid on the substrate by rotating the substrate. A peripheral ceiling portion and a peripheral bottom portion are formed over an entire periphery of the cleaning jig, a discharge port is formed over the entire periphery between the peripheral ceiling portion and the peripheral bottom portion, a plurality of holes is formed in the peripheral bottom portion at intervals in a circumferential direction to communicate with the discharge port, and a lower surface of the peripheral ceiling portion is inclined toward an upper periphery.

公开(公告)号：US12256558B2

公开(公告)日：2025-03-18

申请号：US17668719

申请日：2022-02-10

Applicant: Tokyo Electron Limited

Inventor： Sang Cheol Han ,  Sunghil Lee ,  Iljung Park ,  Soo Doo Chae

IPC: H10B69/00 ,  H01L21/304 ,  H01L21/768

Abstract: A three-dimensional (3D) memory structure includes a memory array formed on a side of a substrate, a far-back-end-of-line (FBEOL) structure formed on the memory array, and a back-end-of-line (BEOL) structure formed on another side of the substrate opposite the side on which the memory array and the BEOL structure are formed. Methodologies to fabricate the 3D memory structure are also disclosed and include forming the memory array on the substrate, forming the FBEOL on the memory array, flipping the substrate, and forming the BEOL on the opposite side of the substrate. Alternative 3D memory structures and fabrication methodologies are also disclosed.

公开(公告)号：US20250087515A1

公开(公告)日：2025-03-13

申请号：US18958534

申请日：2024-11-25

Applicant: Tokyo Electron Limited

Inventor： Kouzou KANAGAWA ,  Kotaro TSURUSAKI ,  Keiji ONZUKA ,  Yoshihiro KAI

IPC: H01L21/677 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing system includes: a loading/unloading part into/from which a cassette that accommodates a plurality of substrates is loaded/unloaded; a batch-type processing part configured to collectively process a lot including the plurality of substrates; a single-substrate-type processing part configured to the plurality of substrates of the lot one by one; and an interface part configured to deliver the plurality of substrates between the batch-type processing part and the single-substrate-type processing part, wherein the loading/unloading part, the single-substrate-type processing part, the interface part, and the batch-type processing part are arranged in this order, and wherein the interface part comprises a lot formation part configured to form the lot, and a transfer part configured to transfer the plurality of substrates from the single-substrate-type processing part to the lot formation part, and configured to transfer the plurality of substrates from the batch-type processing part to the single-substrate-type processing part.

公开(公告)号：US20250087501A1

公开(公告)日：2025-03-13

申请号：US18294339

申请日：2022-07-22

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing method performed in a substrate processing apparatus configured to process a substrate by bringing the substrate into contact with a processing fluid in a supercritical state is provided. The substrate processing apparatus includes: a processing vessel having a processing space; a main supply line configured to supply the processing fluid to the processing space; a discharge line having a first opening/closing valve, the discharge line being configured to discharge the processing fluid from the processing space; and a bypass line branched off from the main supply line at a branch point, the bypass line joining the discharge line at a junction point downstream of the first opening/closing valve. The substrate processing method includes: increasing a pressure of the processing space up to a preset processing pressure; and maintaining, after the increasing of the pressure, the pressure of the processing space at the processing pressure.

公开(公告)号：US20250087454A1

公开(公告)日：2025-03-13

申请号：US18955997

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes: (a) providing a substrate, the substrate including a first film and a second film having openings on the first film, the first film containing a metallic element and a non-metallic element, and (b) etching the first film through the openings. The (b) includes: (i) etching the first film through the openings with a first plasma generated from a first processing gas including a halogen-containing gas by supplying a pulse of a radio-frequency power, (ii) modifying a sidewall of a recess formed in the (i) with a second plasma generated from a second processing gas, and (iii) repeating the (i) and the (ii).

公开(公告)号：US20250084530A1

公开(公告)日：2025-03-13

申请号：US18819238

申请日：2024-08-29

Applicant: Tokyo Electron Limited

Inventor： Yohei MATSUYAMA ,  Ken OKOSHI ,  Yuki KIKUCHI

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

Abstract: A film-forming method according to an aspect of the present disclosure forms a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate. The film-forming method includes: supplying a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom; and supplying a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom.