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    Photoresist formulation for high aspect ratio plating
    31.
    发明授权
    Photoresist formulation for high aspect ratio plating 失效
    用于高纵横比电镀的光刻胶配方

    公开(公告)号：US07563559B2

    公开(公告)日：2009-07-21

    申请号：US11772998

    申请日：2007-07-03

    Applicant: Treliant Fang

    Inventor： Treliant Fang

    IPC: G03F7/075 ,  G03F7/004 ,  G03F7/085

    CPC classification number: G03F7/0385 ,  G03F7/0751 ,  G03F7/085 ,  Y10S430/113 ,  Y10S430/128 ,  Y10S430/155

    Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercaptopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

    Abstract translation: 通过加入选自由缩水甘油氧基丙基三甲氧基硅烷，巯基丙基三甲氧基硅烷和氨基丙基三甲氧基硅烷组成的组的1％至6％的粘合促进剂，改性SU-8光致抗蚀剂组合物以改善其粘合性。 通过加入0.5％至3％的选自二烷基邻苯二甲酸酯，二烷基丙二酸酯，癸二酸二烷基酯，己二酸二烷基酯和六氢化邻苯二甲酸二缩水甘油酯的增塑剂，改性SU-8光致抗蚀剂组合物以提高其抗裂纹和薄膜应力。 通过向SU-8光致抗蚀剂组合物中加入粘合促进剂和增塑剂可以同时获得改进。

    Phase separated system for fluxing
    32.
    发明授权
    Phase separated system for fluxing 失效
    相分离系统进行助熔

    公开(公告)号：US06796482B2

    公开(公告)日：2004-09-28

    申请号：US10286438

    申请日：2002-10-31

    Applicant: Li Ann Wetz ,  Treliant Fang

    Inventor： Li Ann Wetz ,  Treliant Fang

    IPC: B23K120

    CPC classification number: H05K3/3489 ,  B23K1/0016 ,  B23K1/203 ,  B23K35/3612 ,  B23K35/3618 ,  B23K2101/42 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05572 ,  H01L2224/11334 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

    Abstract: A solder flux composition (19) is provided which comprises active ingredients and a carrier. The solder flux composition undergoes a phase separation during solder reflow to form at least a first phase (21) and a second phase (23), such that the active ingredients are disposed primarily in the first phase and the carrier is disposed primarily in the second phase. The use of this solder flux composition is found to reduce solder migration, during solder reflow, that can result in bridging in ball grid arrays and other such devices.

    Abstract translation: 提供了助焊剂组合物（19），其包含活性成分和载体。 焊料组合物在焊料回流期间经历相分离以形成至少第一相（21）和第二相（23），使得活性成分主要设置在第一相中，载体主要设置在第二相 相。 发现使用这种助焊剂组合物可以在焊料回流期间减少焊料迁移，这可能导致在球栅阵列和其他这样的器件中的桥接。

    Photoresist stripping method
    35.
    发明授权
    Photoresist stripping method 失效
    光阻剥离法

    公开(公告)号：US5407788A

    公开(公告)日：1995-04-18

    申请号：US80865

    申请日：1993-06-24

    Applicant: Treliant Fang

    Inventor： Treliant Fang

    IPC: G03F7/42 ,  H01L21/027

    CPC classification number: G03F7/425

    Abstract: The solubility of tetramethylammonium hydroxide pentahydrate in dimethyl sulfoxide is significantly increased by adding to the solution a quantity of dipropyleneglycol monomethylether. This permits up to twelve percent of the tetramethylammonium hydroxide pentahydrate to be dissolved in dimethyl sulfoxide, rather than the maximum of two percent that would otherwise be the case, which enhances the capacity of the solution to strip photoresist. Particularly, if the concentration of dipropyleneglycol monomethylether is in the range of ten to thirty percent, one can obtain both a high stripping rate and a much higher stripping capacity. For example, stripping capacity may be increased from one hundred forty substrates per gallon to six hundred substrates per gallon.

    Abstract translation: 通过向溶液中加入一定量的二丙二醇单甲醚，可显着提高四甲基氢氧化铵五水合物在二甲基亚砜中的溶解度。 这允许多达十二％的四甲基氢氧化铵五水合物溶解在二甲基亚砜中，而不是最大值为百分之二，否则会增加溶液的剥离能力。 特别地，如果二丙二醇单甲醚的浓度在10至30％的范围内，则可以获得高汽提速率和高得多的汽提能力。 例如，剥离能力可以从每加仑一百四十个底物增加到每加仑六百个底物。

    Photoresist stripping method
    36.
    发明授权
    Photoresist stripping method 失效
    光阻剥离法

    公开(公告)号：US5236552A

    公开(公告)日：1993-08-17

    申请号：US874472

    申请日：1992-04-13

    Applicant: Treliant Fang

    Inventor： Treliant Fang

    IPC: C23F1/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H05K3/06

    CPC classification number: G03F7/426

    Abstract: A bath (19) for stripping a cured electrophoretic resist coating (13) consists of a mixture comprising 0.2-50% of a fluoro-containing acetic acid, less than one percent corrosion inhibitors, and 50-99.8% of an amide solvent, preferably a cyclic amide. The amide solvent is preferably N-methylpyrrolidone, and the acid is preferably trifluoroacetic acid.

    Nonlinear optical devices and methods
    37.
    发明授权
    Nonlinear optical devices and methods 失效
    非线性光学器件及方法

    公开(公告)号：US5045364A

    公开(公告)日：1991-09-03

    申请号：US525947

    申请日：1990-05-18

    Applicant: Treliant Fang

    Inventor： Treliant Fang

    IPC: C07D251/34 ,  C08G73/06 ,  G02B6/12 ,  G02F1/35 ,  G02F1/355 ,  G02F1/361

    CPC classification number: G02F1/3616 ,  C07D251/34 ,  C08G73/0655 ,  G02F1/3612 ,  Y10T428/31504

    Abstract: Optically nonlinear device elements such as directional couplers, switches, frequency stabilizers, optical parameters devices and modulators use as an optically nonlinear element a cross-linked triazine polymer containing a covalently bonded optically nonlinear dye moiety. A specific cross-linked triazine with this dye moiety may be made by cyclotrimerizing a p-(N,N-bis(4'-cyanatobenzyl)amino-p'-(2,2-dicyanovinyl)azobenzene monomer. During polycyclotrimerization or cure, the element is subjected to a poling voltage which aligns the dipoles of the dye moiety to give a large useful nonlinear susceptibility.

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